SGS Thomson Microelectronics BTB24-800B, BTB24-700B, BTB24-600B, BTB24-400B Datasheet

®
FEATURES
HIGH SURGE CURRENT CAPABILITY
.
COMMUTATION : (dV/dt)c > 10V/µs
.
BTB24 B
STANDARD TRIACS
DESCRIPTION
The BTB24 B triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose ap­plications where high surge current capability is re­quired. Application such as phase control and static switching on inductive or resistive load.
ABSOLUTE RATINGS
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
I2tI
dI/dt Critical rate of rise of on-state current
Tstg
Tj Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
RMS on-state current (360° conduction angle)
Non repetitive surge peak on-state current ( Tj initial = 25°C )
2
t value tp = 10 ms 312 A2s
Gate supply : IG = 2 . IGT tr ≤ 100ns Storage and operating junction temperature range - 40 to + 150
from case
(limiting values)
tp = 8.3 ms 260 A
tp = 10 ms 250
Repetitive
F = 100 Hz
A1
A2
G
TO220AB
(Plastic)
50 A/µ s
- 40 to + 125 260 ° C
°C °C
Symbol Parameter BTB24-... B Unit
400 600 700 800
V
DRM
V
RRM
October 1998 - Ed: 2A
Repetitive peak off-state voltage Tj = 125 °C
400 600 700 800 V
1/4
BTB24 B
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC 1.5 °C/W
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 1.1 °C/W
GATE CHARACTERISTICS
P
= 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).
G (AV)
(maximum v alu es )
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Quadrant Suffix Unit
I
GT
V
GT
V
GD I
L
IH *I
VTM *ITM= 35A tp= 380µs Tj=25°C MAX 1.6 V
I
DRM
I
RRM
dV/dt * Linear slope up to VD=67%V
(dV/dt)c * (dI/dt)c = 11.1A/ms Tj=125°C MIN 10 V/µs
* For either polarit y of electrode A2 voltage with reference to elec trode A1.
VD=12V (DC) RL=33 Tj=25°C I-II-III-IV MIN 5 mA
I-II-III MAX 50
IV MAX 100 VD=12V (DC) RL=33 Tj=25°C I-II-III-IV MAX 1.3 V VD=V IG=1.2 I
RL=3.3k Tj=125°C I-II-III-IV MIN 0.2 V
DRM
GT
Tj=25°C I-III-IV MAX 70 mA
II 150
= 500mA gate open Tj=25°C MAX 50 m A
T
V
DRM
V
RRM
Rated Rated
DRM
Tj=25°CMAX5µA Tj=125°CMAX2mA Tj=125°C MIN 750 V/µs
gate open
Fig. 1: Maximum power dissipation versus RMS on-state current.
P(W)
35 30 25 20 15
α = 90°
α = 60°
α = 120°
10
α = 30°
5 0
0 5 10 15 20 25
IT(rms)(A)
α = 180°
α
180°
α
2/4
Fig. 2: Correlation between maximum power dissipation
and maximum allowable temperatures (T
T
) for different thermal resistances heatsink +
case
amb
and
contact.
Rth=0°C/W
Tcase (°C)
90
100
110
120 125
P(W)
35
Rth=3°C/W
30
25
20
15
10
α = 180°
5 0
0 20 40 60 80 100 120 140
Rth=2°C/W
Rth=1°C/W
Tamb(°C)
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