Emitter common (dual digital transistors)
EMG8 / UMG8N
Structure Dimensions (Unit : mm)
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
The following characteristics apply to both the DTr
1 and DTr2.
Features
1) Two DTC143Z chips in a EMT or UMT package.
2) Mounting cost and area can be cut in half.
Packaging specifications
Type
EMG8
UMG8N
Package
Code TR
Basic ordering
unit (pieces)
T2R
8000
Taping
3000
Absolute maximum ratings (Ta=25C) Equivalent circuit
Parameter Symbol
Supply voltage
Input voltage
Output current
Power
dissipation
EMG8, UMG8N 150 (TOTAL) mW
I
Junction temperature
Storage temperature
120mW per element must not be exceeded.
∗
V
CC
IN
V
O
I
C (Max.)
Pd
Tj 150 °C
Tstg −55 to +150 °C
Limits
50 V
30
−5
100
100
Unit
V
mA
∗
EMG8
ROHM : EMT5
Abbreviated symbol : G8
UMG8N
0.2
0.15
0.1Min.
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : G8
EMG8 / UMG8N
(3) (2) (1)
R
1
R2R
DTr
2
(4)
(3)
(4)
0.5
(2)
0.22
0.13
2
(5)
0.5
(1)
(5)
1.2
1.6
Each lead has same dimensions
)
)
3
4
(
(
)
2
(
)
)
5
1
(
(
1.25
2.1
0to0.1
Each lead has same dimensions
R1=4.7kΩ
R
1
R
2
=47kΩ
DTr
1
1.0
0.65
0.65
0.7
1.6
0.5
1.3
2.0
0.9
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2012 ROHM Co., Ltd. All rights reserved.
2012.05 - Rev.B
m
100
.0
10m
m
1k
DC CURRENT GAIN : G
m
1
Electrical characteristics (Ta=25C)
Parameter Symbol
I (off)
O
(A)
O
(A)
R2/R
VO=0.3V
lO/lI=20
V
V
V
I
I (on)
O (on)
I
I
O (off)
G
f
T
R
I
1
1
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Transition frequency of the device
∗
Electrical characteristic curves
50
20
(V)
I (on)
10
5
Ta=−40˚C
2
1
500m
INPUT VOLTAGE : V
200m
100m
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m100
25˚C
100˚C
OUTPUT CURRENT : I
Fig.1 Input voltage vs. output current
(ON characteristics)
500m
(V)
200m
O (on)
100m
50m
20m
10m
5m
OUTPTUT VOLTAGE : V
2m
1m
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m100
Ta=100˚C
25˚C
−40˚C
OUTPUT CURRENT : I
Fig.4 Output voltage vs. output
current
Min.
Typ. Max. Unit Conditions
−
−
0.5
1.3
80
3.29
−
−
−
0.1
0.3
−
−
−
−
−
− 250 − V
4.7
6.11
8
10
5m
2m
1m
(A)
500μ
200μ
100μ
50μ
20μ
10μ
OUTPUT CURRENT : Io
5μ
2μ
1μ
0
mA
1.8
0.5
−
MHz
12
0.5 1.0 1.5 2.0 2.5 3
INPUT VOLTAGE : V
CC
V
V
O
=
V
O
=
5mA, I
I
V
I
=
5V
V
CC
V
μA
O
=
V
−
CE
=
kΩ
−−
Ta=100˚C
25˚C
−40˚C
Fig.2 Output current vs. input voltage
(OFF characteristics)
=
5V, I
O
=
100μA
0.3V, I
O
=5
I
=
0.25mA
=
50V, V
I
=
5V, I
O
=10
10V, I
E
=
−5mA, f=100MHz
VCC=5V
I (off)
(V)
mA
0V
mA
Data Sheet EMG8 / UMG8N
∗
−
500
Ta=100˚C
I
200
100
50
20
10
5
2
1
100μ 200μ 500μ1m 2m 5m 10m 20m 50m100
25˚C
−40˚C
OUTPUT CURRENT : I
Fig.3 DC current gain vs. output
current
VO=5V
O
(A)
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2012 ROHM Co., Ltd. All rights reserved.
2012.05 - Rev.B
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