ROHM EMG1, UMG1N, FMG1A Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

EMG1 / UMG1N / FMG1A

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

l

Outline

l

Features

1) Built-In Biasing Resistors, R1 = R2 = 22kW.

2) Two DTC124E chips in one package.

3) Emitter(GND)-common type.

4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).

5) The bias resistors consist of thin-film resistors

l

Inner circuit

with complete isolation to allow negative biasing

of the input. They also have the advantage of
completely eliminating parasitic effects.

6) Only the on/off conditions need to be set for
operation, making the circuit design easy.

7) Lead Free/RoHS Compliant.

l

Application

Inverter circuit, Interface circuit, Driver circuit

l

Packaging specifications

EMT5

UMT5

SMT5

3,000

G1

UMG1N

UMT5

2021

TR

180

8

SMT5

2928

T148

180

8

8,000G18

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

Reel size

(mm)

EMG1

EMT5

1616

T2R

180

3,000

G1

FMG1A

Part No.

Package

Package

size

(mm)

Taping

code

Parameter

Tr1 and Tr2

V

CC

50V

I

C(MAX.)

100mA

R

1

22kW

R

2

22kW

EMG1

(SC-107BB)

FMG1A

(SC-74A)

UMG1N

SOT-353 (SC-88A)

(1)

(5)

(4)

(2)

(3)

(4)

OUT

IN

(3)

GND

(2)

(5)

OUT

IN

(1)

(2)

OUT

IN

(3)

GND

(4)

(1)

OUT

IN

(5)

EMG1 / UMG1N

FMG1A

(5)

(1)

(2)

(4)

(3)

(2)

(1)

(3)

(4)

(5)

1/7

2012.06 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMG1 / UMG1N / FMG1A

lAbsolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Supply voltage
Input voltage
Output current
Collector current

Power dissipation

Junction temperature
Range of storage temperature

lElectrical characteristics(Ta = 25°C)

<For Tr1 and Tr2 in common>

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

MHz

Transition frequency

fT

*1

V

CE

= 10V, IE = -5mA,

f = 100MHz

-

250

-

kW

Resistance ratio

R2/R

1

-

0.811.2

-

Input resistance

R

1

-

15.4

22

28.6

mA

DC current gain

G

I

VO = 5V, IO = 5mA

56--

-

Output current

I

O(off)

V

CC

= 50V, VI = 0V

--0.5

V

Input current

I

I

VI = 5V

--0.36

mA

Output voltage

V

O(on)

IO / II = 10mA / 0.5mA

-

0.1

0.3

V
V

I(on)

VO = 0.2V, IO = 5mA

3--

0.5

Input voltage

V

I(off)

V

CC

= 5V, IO = 100mA

-

-

Parameter

Symbol

Conditions

Unit

Min.

Typ.

Max.

T

j

150

°C

T

stg

-55 to +150

°C

I

C(MAX.)

*1

100

mA

EMG1

P

D

*2

150 (Total)

*3

mW

UMG1N / FMG1A

300 (Total)

*4

mW

V

IN

-10 to +40

V

I

O

30

mA

Parameter

Symbol

Values

Unit

V

CC

50

V

2/7

2012.06 - Rev.B

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMG1 / UMG1N / FMG1A

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Input voltage vs. output current
(ON characteristics)

INPUT VOLTAGE : V

I(on)

[V]

OUTPUT CURRENT : IO [A]

Fig.2 Output current vs. input voltage
(OFF characteristics)

OUTPUT CURRENT : I

O

[A]

INPUT VOLTAGE : V

I(off)

[V]

Fig.3 Output current vs. output voltage

OUTPUT CURRENT : I

O

[mA]

OUTPUT VOLTAGE : VO [V]

Fig.4 DC current gain vs. output current

DC CURRENT GAIN : G

I

OUTPUT CURRENT : IO [A]

0

10

20

30

0 5 10

0A

70μA

80μA

100μA

110μA

120μA

130μA

90μA

II=

Ta=25ºC

60μA

50μA

140μA

150μA

3/7

2012.06 - Rev.B