Datasheet ES6U42 Datasheet (ROHM)

A

<Di>

2.5V Drive Pch+SBD MOSFET

ES6U42

zStructure zDimensions (Unit : mm)

Silicon P-channel MOSFET / Schottky barrier diode

zFeatures

1) Pch MOSFET and schottky barrier diode are put in WEMT6 package.

2) High-speed switching, Low On-resistance.

3) Low voltage drive (2.5V drive).

4) Built-in Low V

F schottky barrier diode.

zApplications

Switching

zPackage specifications zInner circuit

Type

ES6U42

Package Code Basic ordering unit (pieces)

Taping

T2R

8000

zAbsolute maximum ratings (Ta=25°C)

WEMT6

Abbreviated symbol : U42

(6)

∗1 ESD protection diode ∗2 Body diode

(1) (2)

(6) (5) (4)

(1) (2) (3)

(5)

∗1

(4)

∗2

(1)Gate (2)Source (3)Anode (4)Cathode

(3)

(5)Drain (6)Drain

Drain-source voltage Gate-source voltage

Drain current

Source current (Body diode)

Channel temperature Power dissipation W / ELEMENT0.7

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Parameter

Continuous Pulsed Continuous Pulsed

Symbol

DSS GSS

D

DP

S

SP

P

D

Limits Unit

−20 ±12

±1.0

∗1

±4.0

−0.4

∗1

−4.0

150

∗2

VV VV AI AI AI AI

°CTch

Repetitive peak reverse voltage Reverse voltage Forward current

Forward current surge peak Junction temperature Power dissipation W / ELEMENT

∗1 60Hz 1cycle ∗2 Mounted on a ceramic board

Parameter

Symbol

RM

R

I

F

I

FSM

Tj

P

D

Limits Unit

25 20

0.5

∗1

2.0

150

∗2

0.5

VV VV A A

°C

Parameter Symbol Power dissipation Range of storage temperature

∗ Mounted on a ceramic board

D

Limits Unit

∗

0.8

−55 to +150

W / TOTALP

°CTstg

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ES6U42 Data Sheet

zElectrical characteristics (Ta=25°C)

Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage

Static drain-source on-state resistance

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge

∗Pulsed

Parameter Symbol

∗Pulsed

I

V

(BR) DSS

I

V

GS (th)

R

DS (on)

C

C C

t

d (on)

t

d (off)

Q

V

Min. Typ. Max.

GSS

−−±10 µAVGS= ±12V, VDS=0V

Unit

−20 −−VID= −1mA, VGS=0V

DSS

−−−1 µAV

−0.7 −−2.0 V V

− 280 390 I

∗

− 310 430 mΩ

− 570 800 I

∗

Y

fs

0.7 −−SV

iss

− 150 − pF V

oss

− 2020− pF V

rss

−

∗

t

r

∗

t

f

∗

Q

g

∗

gs

∗

gd

9

−

8

−

25

−

10

−

2.1

−

0.5

−

0.5

−−nC

Min. Typ. Max.

∗

SD

−−−1.2 V IS= −1.0A, VGS=0VForward voltage

mΩ

I

mΩ

− pF f= 1MHz

− ns

− nC

V

V ID= −0.5A R R

V

− nC I R

Unit

Conditions

= −20V, VGS=0V

DS

= −10V, ID= −1mA

DS

= −1A, VGS= −4.5V

D

= −1A, VGS= −4V

D

= −0.5A, VGS= −2.5V

D

= −10V, ID= −0.5A

DS

= −10V

DS

= 0V

GS

DD

−15V

GS

= −4.5V

L

30Ω

G

= 10Ω

−15V, VGS= −4.5V

DD

= −1A, R

D

= 10Ω

G

L

15Ω

Conditions

Parameter Symbol

Forward voltage Reverse current

Min. Typ. Max.

F

R

I

−−

V

Unit

0.36 V

0.52 V 100

µA

= 0.1A

I

F

= 0.5A

I

F

V

R

= 20V

Conditions

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ES6U42 Data Sheet

zElectrical characteristics curves

2.0 Ta=25°C

Pulsed

1.5

[A]

D

1.0

0.5

DRAIN CURRENT : -I

0.0

0.0 0.2 0.4 0.6 0.8 1.0

DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V]

Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics

VGS= -10V

= -4.5

V

GS

VGS= -4.0 VGS= -3.0

VGS= -2.5

VGS= -2.2

VGS= -2.0

2.0

[A]

D

1.5

1.0

0.5

DRAIN CURRENT : -I

0.0

VGS= -10V

= -4.0V

V

GS

= -3.0V

V

GS

0.0 2.0 4.0 6.0 8.0 10.0

Ta=25°C Pulsed

VGS= -2.4

VGS= -2.2

VGS= -2.0

10

VDS= -10V

Pulsed

[A]

1

D

DRAIN CURRENT : -I

Ta= 125°C

Ta= 75°C Ta= 25°C

Ta= - 25°C

0.1

0.01

0.001

1.0 1.5 2.0 2.5

GATE-SOURCE VOLTAGE : -VGS[V]

10000

Ta=25°C Pulsed

]

Ω

(ON)[m

DS

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.01 0.1 1 10

DRAIN-CURRENT : -I

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)

10000

VGS= -2.5V

Pulsed

]

Ω

(ON)[m

DS

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)

VGS= -2.5V

= -4.0V

V

GS

= -4.5V

V

GS

[A]

D

Ta=125°C Ta=75°C Ta=25°C Ta= -25°C

10000

VGS= -4.5V

Pulsed

]

Ω

(ON)[m

DS

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)

10

VDS= -10V

Pulsed

1

: |Yfs| [S]

0

FORWARD TRANSFER ADMITTANCE

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.8 Forward Transfer Admittance vs. Drain Current

Ta=125°C Ta=75°C Ta=25°C Ta= -25°C

Ta= -25°C Ta=25°C Ta=75°C Ta=125°C

10000

VGS= -4V

Pulsed

]

Ω

(ON)[m

DS

1000

RESISTANCE : R

100

STATIC DRAIN-SOURCE ON-STATE

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)

10

VGS=0V

Pulsed

Ta=125°C

1

Ta=75°C Ta=25°C

Ta=-25°C

0.1

REVERSE DRAIN CURRENT : -Is [A]

0.01

0.2 0.4 0.6 0.8 1.0 1.2

SOURCE-DRAIN VOLTAGE : -VSD [V]

Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage

Ta=125°C Ta=75°C Ta=25°C Ta= -25°C

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f

ES6U42 Data Sheet

1000

900

]

Ω

800

700

(ON)[m

600

DS

500

400

300

RESISTANCE : R

200

STATIC DRAIN-SOURCE ON-STATE

100

024681012

GATE-SOURCE VOLTAGE : -VGS[V]

Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage

ID= -1.0A

ID= -0.5A

1000

100

10

Crss

Coss

CAPACITANCE : C [pF]

1

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : -V

Fig.13 Typical Capacitance vs. Drain-Source Voltage

<Di>

Ta=25°C Pulsed

Ciss

Ta=25°C f=1MHz V

=0V

GS

[V]

DS

10000

1000

t

100

10

SWITCHING TIME : t [ns]

t

r

1

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.11 Switching Characteristics

td(off)

td(on)

Ta=25°C V

= -15V

DD

=-4.5V

V

GS

R

=10Ω

G

Pulsed

5

[V]

4

GS

3

2

1

GATE-SOURCE VOLTAGE : -V

0

00.511.522.5

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C V

= -15V

DD

= -1.0A

I

D

=10Ω

R

G

Pulsed

100000

pulsed

10000

[uA]

R

1000

100

10

1

0.1

REVERSE CURRENT: I

0.01

0 5 10 15 20 25

REVERSE VOLTAGE : V

Fig.1 Reverse Current vs. Reverse Voltage

Ta = 75

Ta = 25

Ta= - 25

[V]

R

1

pulsed

℃

(A)

F

0.1

Ta = 75

℃

Ta = 25

℃

Ta= - 25

0.01

℃

FORWARD CURRENT : I

0.001

0 0.1 0.2 0.3 0.4 0.5 0.6

FORWARD VOLTAGE : V

(V)

F

Fig.2 Forward Current vs. Forward Voltage

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A

Fig.1-1 Switching Time Measurement Circuit

V

%

F

it

S

m

V

ES6U42 Data Sheet

zMeasurement circuit

G

Q

gs

Pulse Width

10%

50%

90%

t

on

10%

t

r

Q

50%

90%

10%

90

d(off)

t

tf

t

off

g

Q

gd

I

G(Const.)

I

V

R

G

D

GS

D.U.T.

V

DS

R

L

V

DD

GS

DS

t

d(on)

Fig.1-2 Switching Waveforms

I

V

R

G

D

GS

D.U.T.

V

D

R

L

V

DD

V

GS

Charge

ig.2-1 Gate Charge Measurement Circu

FIg.2-2 Gate Charge Wavefor

zNotice

1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.

This built-in SBD has low V

F characteristics and therefore, higher leak current. Please consider enough the surrounding

temperature, generating heat of MOSFET and the reverse current.

2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD

protection circuit.

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Appendix

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM

CO.,LTD.

The content specified herein is subject to change for improvement without notice.

The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you

wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM

upon request.

Examples of application circuits, circuit constants and any other information contained herein illustrate the

standard usage and operations of the Products. The peripheral conditions must be taken into account

when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specified in this document. However, should

you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no re-

sponsibility for such damage.

The technical information specified herein is intended only to show the typical functions of and examples

of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to

use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no re-

sponsibility whatsoever for any dispute arising from the use of such technical information.

The Products specified in this document are intended to be used with general-use electronic equipment

or devices (such as audio visual equipment, office-automation equipment, communication devices, elec-

tronic appliances and amusement devices).

The Products are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard against the

possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as

derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your

use of any Product outside of the prescribed scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or system

which requires an extremely high level of reliability the failure or malfunction of which may result in a direct

threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment,

aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear

no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intend-

ed to be used for any such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.

Notes

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Appendix-Rev4.0

Datasheet ES6U42 Datasheet (ROHM) [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual