ROHM ES6U42 Schematic [ru]
A
<MOSFET>
<Di>
<MOSFET and Di>
2.5V Drive Pch+SBD MOSFET
ES6U42
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET /
Schottky barrier diode
zFeatures
1) Pch MOSFET and schottky barrier diode
are put in WEMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low V
F schottky barrier diode.
zApplications
Switching
zPackage specifications zInner circuit
Type
ES6U42
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
WEMT6
Abbreviated symbol : U42
(6)
∗1 ESD protection diode
∗2 Body diode
(1) (2)
(6) (5) (4)
(1) (2) (3)
(5)
∗1
(4)
∗2
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(3)
(5)Drain
(6)Drain
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation W / ELEMENT0.7
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Parameter
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
P
D
Limits Unit
−20
±12
±1.0
∗1
±4.0
−0.4
∗1
−4.0
150
∗2
VV
VV
AI
AI
AI
AI
°CTch
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation W / ELEMENT
∗1 60Hz 1cycle
∗2 Mounted on a ceramic board
Parameter
Symbol
RM
R
I
F
I
FSM
Tj
P
D
Limits Unit
25
20
0.5
∗1
2.0
150
∗2
0.5
VV
VV
A
A
°C
Parameter Symbol
Power dissipation
Range of storage temperature
∗ Mounted on a ceramic board
D
Limits Unit
∗
0.8
−55 to +150
W / TOTALP
°CTstg
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c
○
2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.01 - Rev.
A
<MOSFET>
<Body diode characteristics (Source-drain)>
<Di>
ES6U42 Data Sheet
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Parameter Symbol
∗Pulsed
I
V
(BR) DSS
I
V
GS (th)
R
DS (on)
C
C
C
t
d (on)
t
d (off)
Q
Q
V
Min. Typ. Max.
GSS
−−±10 µAVGS= ±12V, VDS=0V
Unit
−20 −−VID= −1mA, VGS=0V
DSS
−−−1 µAV
−0.7 −−2.0 V V
− 280 390 I
∗
− 310 430 mΩ
− 570 800 I
∗
Y
fs
0.7 −−SV
iss
− 150 − pF V
oss
− 2020− pF V
rss
−
∗
∗
t
r
∗
∗
t
f
∗
Q
g
∗
gs
∗
gd
9
−
8
−
25
−
10
−
2.1
−
0.5
−
0.5
−−nC
Min. Typ. Max.
∗
SD
−−−1.2 V IS= −1.0A, VGS=0VForward voltage
mΩ
I
mΩ
− pF f= 1MHz
− ns
− ns
− ns
− ns
− nC
V
V
ID= −0.5A
R
R
V
− nC I
R
Unit
Conditions
= −20V, VGS=0V
DS
= −10V, ID= −1mA
DS
= −1A, VGS= −4.5V
D
= −1A, VGS= −4V
D
= −0.5A, VGS= −2.5V
D
= −10V, ID= −0.5A
DS
= −10V
DS
= 0V
GS
DD
−15V
GS
= −4.5V
L
30Ω
G
= 10Ω
−15V, VGS= −4.5V
DD
= −1A, R
D
= 10Ω
G
L
15Ω
Conditions
Parameter Symbol
Forward voltage
Reverse current
Min. Typ. Max.
F
R
I
−−
−−
−−
V
Unit
0.36 V
0.52 V
100
µA
= 0.1A
I
F
= 0.5A
I
F
V
R
= 20V
Conditions
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2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.01 - Rev.
A
V
V
V
V
V
V
V
V
V
ES6U42 Data Sheet
zElectrical characteristics curves
<MOSFET>
2.0
Ta=25°C
Pulsed
1.5
[A]
D
1.0
0.5
DRAIN CURRENT : -I
0.0
0.0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics
VGS= -10V
= -4.5
V
GS
VGS= -4.0
VGS= -3.0
VGS= -2.5
VGS= -2.2
VGS= -2.0
2.0
[A]
D
1.5
1.0
0.5
DRAIN CURRENT : -I
0.0
VGS= -10V
= -4.0V
V
GS
= -3.0V
V
GS
0.0 2.0 4.0 6.0 8.0 10.0
Ta=25°C
Pulsed
VGS= -2.4
VGS= -2.2
VGS= -2.0
10
VDS= -10V
Pulsed
[A]
1
D
DRAIN CURRENT : -I
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
0.001
1.0 1.5 2.0 2.5
GATE-SOURCE VOLTAGE : -VGS[V]
10000
Ta=25°C
Pulsed
]
Ω
(ON)[m
DS
1000
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.01 0.1 1 10
DRAIN-CURRENT : -I
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
10000
VGS= -2.5V
Pulsed
]
Ω
(ON)[m
DS
1000
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.01 0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
VGS= -2.5V
= -4.0V
V
GS
= -4.5V
V
GS
[A]
D
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10000
VGS= -4.5V
Pulsed
]
Ω
(ON)[m
DS
1000
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.01 0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
10
VDS= -10V
Pulsed
1
: |Yfs| [S]
0
0
FORWARD TRANSFER ADMITTANCE
0.01 0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
10000
VGS= -4V
Pulsed
]
Ω
(ON)[m
DS
1000
RESISTANCE : R
100
STATIC DRAIN-SOURCE ON-STATE
0.01 0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
10
VGS=0V
Pulsed
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
REVERSE DRAIN CURRENT : -Is [A]
0.01
0.2 0.4 0.6 0.8 1.0 1.2
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
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2009 ROHM Co., Ltd. All rights reserved.
3/5
2009.01 - Rev.
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