ROHM ES6U3 Technical data

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4V Drive Nch+SBD MOSFET

ES6U3

zStructure zDimensions (Unit : mm) Silicon N-channel MOSFET / Schottky barrier diode

zFeatures

1) Nch MOSFET and schottky barrier diode are put in WEMT6 package.

2) High-speed switching, Low On-resistance.

3) Built-in Low V

F schottky barrier diode.

zApplications zInner circuit

Switching

zPackage specifications

Package

Type

ES6U3

Code Basic ordering unit (pieces)

Taping

T2R

8000

zAbsolute maximum ratings (Ta=25°C)

WEMT6

Abbriviated symbol : U03

(6)

∗1 ESD protection diode ∗2 Body diode

(1) (2)

(6) (5) (4)

(1) (2) (3)

(5)

∗2

∗1

(4)

(3)

(1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain

Drain-source voltage Gate-source voltage

Drain current

Source current (Body diode)

Channel temperature Power dissipation W / ELEMENT0.7

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Repetitive peak reverse voltage Reverse voltage Forward current

Forward current surge peak Junction temperature Power dissipation W / ELEMENT

∗1 60Hz 1cyc. ∗2 Mounted on a ceramic board

Power dissipation Range of storage temperature

∗ Mounted on a ceramic board

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Parameter

Continuous Pulsed Continuous Pulsed

Parameter

Symbol

DSS GSS

Symbol

FSM

Parameter Symbol

∗1

∗2

∗1

∗2

∗

Limits Unit

±20 ±1.4 ±2.8

0.5

2.8

150

Limits Unit

25 20

0.5

2.0

150

0.5

Limits Unit

0.8

−55 to +150

1/4

VV VV AI AI AI AI

°CTch

VV VV A A

°C

W / TOTALP

°CTstg

2009.03 - Rev.A

<Di>

ES6U3

zElectrical characteristics (Ta=25°C)

Data Sheet

Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage

Static drain-source on-state resistance

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge

∗Pulsed

Parameter Symbol

∗Pulsed

(BR) DSS

GS (th)

DS (on)

C C

d (on)

d (off)

Min.−Typ. Max.

GSS

−±10 µAVGS=±20V, VDS=0V

30 −−VI

DSS

−−1 µAV

1.0 − 2.5 V V

− 170 240 I

∗

− 250 350 mΩ

− 270 380 I

∗

1 −−SV

− 70 − pF V

iss

− 1512− pF V

oss

−

rss

∗

−

1.4

−

0.6

−

0.3

−−nC

Min. Typ. Max.

∗

−−1.2 V IS= 1.4A, VGS=0VForward voltage

Unit

= 1mA, VGS=0V

= 30V, VGS=0V

= 10V, ID= 1mA

= 1.4A, VGS= 10V

mΩ

= 1.4A, VGS= 4.5V

= 1.4A, VGS= 4V

mΩ

= 10V, ID= 1.4A

= 10V

=0V

− pF f=1MHz

− ns

− nC

ID= 0.7A

= 10V

21Ω

R R

= 10Ω

15V, VGS= 5V

ID= 1.4A, R

= 10Ω

Unit

15V

Conditions

11Ω

Conditions

Parameter Symbol Forward voltage

Reverse current

Min. Typ. Max.

−−

Unit

0.36 V

0.52 V 100

µA

= 0.1A

= 0.5A

= 20V

Conditions

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2009.03 - Rev.A

ES6U3

zElectrical characteristics curves < MOSFET >

1000

(pF)

100

CAPACITANCE : C

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : V

Ta=25°C f=1MHz V

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

VDS=10V Pulsed

(A)

Ta=125°C

Ta=75°C Ta=25°C

Ta= −25°C

0.1

0.01

DRAIN CURRENT : I

0.001

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

GATE-SOURCE VOLTAGE : V

Fig.4 Typical Transfer Characteristics

10000

(mΩ)

DS(on)

1000

Ta=125°C

Ta=75°C Ta=25°C

Ta= −25°C

VGS=10V Pulsed

=0V

iss

oss

rss

(V)

1000

(ns)

100

d (off)

d (on)

SWITCHING TIME : t

0.01 0.1 1 10

DRAIN CURRENT : I

Ta=25°C V V R Pulsed

(A)

DD GS G

=15V =10V

=10Ω

Fig.2 Switching Characteristics

(V)

1000

Ta=25°C

900

Pulsed

(mΩ)

800

DS(on)

700 600

500

ID=0.7A

400 300 200 100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0246 810

GATE SOURCE VOLTAGE : V

ID=1.4A

(V)

Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

10000

(mΩ)

DS(on)

1000

Ta=125°C

Ta=75°C Ta=25°C

Ta= −25°C

VGS=4.5V Pulsed

Ta=25°C

=15V

(V)

=1.4A

=10Ω

Pulsed

7 6

5 4 3 2 1

GATE SOURCE VOLTAGE : V

0123

TOTAL GATE CHARGE : Qg (nC)

Fig.3 Dynamic Input Characteristics

(A)

Ta=125°C Ta=75°C Ta=25°C Ta= −25°C

0.1

SOURCE CURRENT : I

0.01

0.0 0.5 1.0 1.5

SOURCE-DRAIN VOLTAGE : V

Fig.6 Source Current vs.

10000

(mΩ)

DS (on)

1000

Source-Drain Voltage

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

Data Sheet

VGS=0V Pulsed

(V)

VGS=4V Pulsed

100

ON-STATE RESISTANCE : R

STATIC DRAIN- SOURCE

0.01 0.1 1 10

DRAIN CURRENT : I

Fig.7 Static Drain-Source On-State Resistance vs.

Drain Current ( Ι )

1000

(mΩ)

DS (on)

100

STATIC DRAIN- SOURCE

ON-STATE RESISTANCE : R

0.1 1 10

VGS=4V

VGS=4.5V

VGS=10V

DRAIN CURRENT : I

Fig.10 Static Drain-Source On-State Resistance vs.

Drain Current ( Ι )

(A)

Ta=25°C Pulsed

(A)

100

ON-STATE RESISTANCE : R

STATIC DRAIN- SOURCE

0.01 0.1 1 10

DRAIN CURRENT : I

(A)

Fig.8 Static Drain-Source On-State Resistance vs.

Drain Current ( ΙΙ )

100

STATIC DRAIN- SOURCE

ON-STATE RESISTANCE : R

0.01 0.1 1 10

DRAIN CURRENT : I

(A)

Fig.9 Static Drain-Source On-State Resistance vs.

Drain Current ( ΙΙΙ )

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2009.03 - Rev.A

Fig.1-2 Switching Waveforms

V V

FIg.2-2 Gate Charge Waveform

ES6U3

< Di >

zMeasurement circuit

100000

puls ed

10000

(

1000

100

0.1

REVERSE CURRENT : I

0.01 0 5 10 15 20 25

REVERSE VOLT AGE : VR[V]

Fi g.1 R evers e Cur rent vs. R evers e Voltag e

puls ed

Ta = 75

℃

Ta = 25

℃

Ta= - 25

℃

D.U.T.

(A)

0.1

Ta = 75

℃

Ta = 25

℃

Ta= - 25

Pulse Width

50%

10%

[V]

90%

℃

90%

0.01

FORWARD CURRENT : I

0.001 0 0.1 0.2 0.3 0.4 0.5 0.6

FORWARD VOLTAGE : V

Fi g.2 F orwar d Curr ent vs. For ward Vol tage

d(on)

d(off)

off

50%

90%

Data Sheet

ig.1-1 Switching Time Measurement Circu

D.U.T.

G(Const.)

ig.2-1 Gate Charge Measurement Circu

Charge

zNotice

1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.

This built-in SBD has low V

F characteristics and therefore, higher leak current. Please consider enough the surrounding

temperature, generating heat of MOSFET and the reverse current.

2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD

protection circuit.

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2009.03 - Rev.A

Notes

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Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other par ties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.

Notice

The Products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, communication devices, electronic appliances and amusement devices).

The Products specied in this document are not designed to be radiation tolerant.

While ROHM always makes ef forts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injur y (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing.

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ROHM ES6U3 Technical data

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