ROHM ES6U2 Technical data
<MOSFET>
<Di>
<MOSFET and Di>
1.5V Drive Nch+SBD MOSFET
ES6U2
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Schottky barrier diode
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in WEMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (1.5V drive).
4) Built-in Low VF schottky barrier diode.
zApplications zInner circuit
Switching
zPackage specifications
Type
ES6U2
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
WEMT6
Abbriviated symbol : U02
(6)
∗1 ESD protection diode
∗2 Body diode
(1) (2)
(6) (5) (4)
(1) (2) (3)
(5)
∗2
∗1
(4)
(3)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
(6)Drain
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Power dissipation W / ELEMENT0.7
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
DSS
GSS
D
DP
S
SP
P
D
Limits Unit
20
±10
±1.5
∗1
±3.0
0.5
∗1
3.0
150
∗2
VV
VV
AI
AI
AI
AI
°CTch
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation W / ELEMENT
∗1 60Hz 1cyc.
∗2 Mounted on ceramic board
Symbol
RM
R
I
F
I
FSM
Tj
P
D
∗1
∗2
Limits Unit
25
20
0.5
2.0
150
VV
VV
A
A
°C
0.5
Parameter Symbol
Power dissipation
Range of storage temperature
∗ Mounted on a ceramic board
∗
D
Limits Unit
0.8
−55 to +150
W / TOTALP
°CTstg
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2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
<MOSFET>
<Body diode characteristics (Source-drain)>
<Di>
zElectrical characteristics (Ta=25°C)
Data Sheet ES6U2
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Parameter Symbol
∗Pulsed
I
V
(BR) DSS
I
V
GS (th)
R
DS (on)
C
C
C
t
d (on)
t
d (off)
Q
Q
V
Min.−Typ. Max.
GSS
−±10 µAVGS=±10V, VDS=0V
20 −−VI
DSS
−−1 µAV
0.3 − 1.0 V V
− 130 180 I
− 170 240 mΩ
∗
− 220 310 I
∗
1.6 −−SV
Y
fs
− 110 − pF V
iss
− 1815− pF V
oss
−
rss
∗
∗
t
r
∗
∗
t
f
∗
Q
g
∗
gs
∗
gd
5
−
5
−
20
−
3
−
1.8
−
0.3
−
0.3
−−nC
Min. Typ. Max.
∗
SD
−−1.2 V IS= 1.5A, VGS=0VForward voltage
Unit
= 1mA, VGS=0V
D
= 20V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 1.5A, VGS= 4.5V
mΩ
D
= 1.5A, VGS= 2.5V
I
D
mΩ
= 0.8A, VGS= 1.8V
D
mΩ− 300 600 I
= 0.3A, VGS= 1.5V
D
= 10V, ID= 1.5A
DS
= 10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC
VDD 10V
ID= 1A
GS
= 4.5V
V
L
10Ω
R
G
= 10Ω
R
V
10V, VGS= 4.5V
DD
ID= 1.5A, R
= 10Ω
R
G
Unit
Conditions
6.7Ω
L
Conditions
Parameter Symbol
Forward voltage
Reverse current
Min. Typ. Max.
F
R
I
−−
−−
−−
V
Unit
0.36 V
0.52 V
100
µA
= 0.1A
I
F
= 0.5A
I
F
= 20V
V
R
Conditions
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2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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