ROHM ES6U2 Technical data

<Di>

1.5V Drive Nch+SBD MOSFET

ES6U2

zStructure zDimensions (Unit : mm) Silicon N-channel MOSFET / Schottky barrier diode

zFeatures

1) Nch MOSFET and schottky barrier diode are put in WEMT6 package.

2) High-speed switching, Low On-resistance.

3) Low voltage drive (1.5V drive).

4) Built-in Low VF schottky barrier diode.

zApplications zInner circuit

Switching

zPackage specifications

Type

ES6U2

Package Code Basic ordering unit (pieces)

Taping

T2R

8000

zAbsolute maximum ratings (Ta=25°C)

WEMT6

Abbriviated symbol : U02

(6)

∗1 ESD protection diode ∗2 Body diode

(1) (2)

(6) (5) (4)

(1) (2) (3)

(5)

∗2

∗1

(4)

(3)

(1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain

Parameter Drain-source voltage Gate-source voltage

Drain current

Source current (Body diode)

Continuous Pulsed Continuous

Pulsed Channel temperature Power dissipation W / ELEMENT0.7

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Symbol

DSS GSS

D

DP

S

SP

P

D

Limits Unit

20

±10

±1.5

∗1

±3.0

0.5

∗1

3.0

150

∗2

VV VV AI AI AI AI

°CTch

Parameter Repetitive peak reverse voltage Reverse voltage Forward current

Forward current surge peak Junction temperature Power dissipation W / ELEMENT

∗1 60Hz 1cyc. ∗2 Mounted on ceramic board

Symbol

RM

R

I

F

I

FSM

Tj

P

D

∗1

∗2

Limits Unit

25 20

0.5

2.0

150

VV VV A A

°C

0.5

Parameter Symbol Power dissipation Range of storage temperature

∗ Mounted on a ceramic board

∗

D

Limits Unit

0.8

−55 to +150

W / TOTALP

°CTstg

www.rohm.com

1/5

c

○

2009.12 - Rev.A

<Di>

zElectrical characteristics (Ta=25°C)

Data Sheet ES6U2

Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage

Static drain-source on-state resistance

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge

∗Pulsed

Parameter Symbol

∗Pulsed

I

V

(BR) DSS

I

V

GS (th)

R

DS (on)

C

C C

t

d (on)

t

d (off)

Q

V

Min.−Typ. Max.

GSS

−±10 µAVGS=±10V, VDS=0V

20 −−VI

DSS

−−1 µAV

0.3 − 1.0 V V

− 130 180 I

− 170 240 mΩ

∗

− 220 310 I

∗

1.6 −−SV

Y

fs

− 110 − pF V

iss

− 1815− pF V

oss

−

rss

∗

t

r

∗

t

f

∗

Q

g

∗

gs

∗

gd

5

−

5

−

20

−

3

−

1.8

−

0.3

−

0.3

−−nC

Min. Typ. Max.

∗

SD

−−1.2 V IS= 1.5A, VGS=0VForward voltage

Unit

= 1mA, VGS=0V

D

= 20V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 1.5A, VGS= 4.5V

mΩ

D

= 1.5A, VGS= 2.5V

I

D

mΩ

= 0.8A, VGS= 1.8V

D

mΩ− 300 600 I

= 0.3A, VGS= 1.5V

D

= 10V, ID= 1.5A

DS

= 10V

DS

=0V

GS

− pF f=1MHz

− ns

− nC

VDD 10V

ID= 1A

GS

= 4.5V

V

L

10Ω

R

G

= 10Ω

R V

10V, VGS= 4.5V

DD

ID= 1.5A, R

= 10Ω

R

G

Unit

Conditions

6.7Ω

L

Conditions

Parameter Symbol Forward voltage

Reverse current

Min. Typ. Max.

F

R

I

−−

V

Unit

0.36 V

0.52 V 100

µA

= 0.1A

I

F

= 0.5A

I

F

= 20V

V

R

Conditions

www.rohm.com

2/5

c

○

2009.12 - Rev.A

V

zElectrical characteristics curves

1.5

[A]

D

1

0.5

DRAIN CURRENT : I

0

0 0.2 0.4 0.6 0.8 1

VGS= 10 VGS= 4.5 VGS= 2.5

VGS= 1. 8V

VGS= 1.5V

VGS= 1.3V

VGS= 1. 2V

Ta=25°C Pulsed

1.5 VGS= 4.5V

= 1.8V

V

GS

[A]

D

1

0.5

DRAIN CURRENT : I

0

0246810

VGS= 1. 5V

VGS= 1. 1V

VGS= 1.3V

Ta= 25°C Pulsed

10

VDS= 10V Pulsed

[A]

D

1

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

0.1

DRAIN CURRENT : I

0.01

0.001

00.5 11.52

Data Sheet ES6U2

DR AIN-SOU RCE VOLTAGE : VDS[V] DR AIN-SOU RCE VOLTAGE : VDS[V]

Fi g.1 Typi cal Output C haract eris tics(Ⅰ) Fi g.2 T ypic al Output C haract eris tics(Ⅱ)

10000

Ta= 25°C Pulsed

]

Ω

1000

(on)[m

DS

100

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0. 1 1 10

DRAIN-CURRENT : I

Fi g.4 Stati c Dr ain- Source On- State

Resi stance vs. D rain C urr ent(Ⅰ)

10000

VGS= 1. 8V Pulsed

]

Ω

1000

(on)[m

DS

100

RESIST ANCE : R

STATIC DRAIN -SOUR CE ON- STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.7 Stati c Dr ain- Source On- State

Resistance vs. Dr ain Cur rent(Ⅳ)

VGS= 1.5V

= 1.8V

V

GS

V

= 2.5V

GS

= 4.5V

V

GS

[A]

D

Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C

10000

VGS= 4.5V Pulsed

]

Ω

1000

(on) [m

DS

100

RESIST ANCE : R

STATIC DRAIN -SOUR CE ON- STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.5 Stat ic Dr ain- Source On- State

Resi stance vs. D rain C urr ent(Ⅱ)

10000

VGS= 1. 5V Pulsed

]

Ω

1000

(on)[m

DS

100

RESIST ANCE : R

STATIC DRAIN -SOUR CE ON- STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.8 Stat ic Dr ain- Source On- State

Resi stance vs. D rain C urr ent(Ⅴ)

Ta= 125°C Ta=75°C Ta=25°C Ta= -25°C

Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C

GATE- SOURCE VOLT AGE : VGS[V]

Fi g.3 T ypical Trans fer C haracter isti cs

10000

VGS= 2. 5V Pulsed

]

Ω

1000

(on) [m

DS

100

RESIST ANCE : R

STATIC DRAIN -SOUR CE ON- STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.6 Stati c Dr ain- Source On- State

Resistance vs. Dr ain Cur rent(Ⅲ)

10

VDS= 10V Pulsed

1

0.1

FOR WARD T RANSFER ADMITT ANCE : |Yfs | [S]

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.9 F orward Tr ansfer Admittance vs. Dr ain Curr ent

Ta=125°C Ta=75°C Ta=25°C Ta= -25°C

Ta= -25°C Ta=25°C Ta=75°C Ta=125°C

www.rohm.com

3/5

c

○

2009.12 - Rev.A

10

<Di>

VGS=0V Pulsed

1

0.1

REVER SE DRAIN CURR ENT : Is [A]

0.01 0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : VSD [V]

Fi g.10 R evers e Drai n Curr ent vs. Sours e-D rain Voltage

5

[V]

GS

4

3

2

1

GATE-SOU RCE VOLTAGE : V

0

00.511.52

TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : VDS[V]

Fi g.13 D ynamic I nput Char acteri stic s Fi g.14 T ypical Capaci tance

100000

puls ed

10000

(A)

R

1000

100

10

1

REVERSE CURRENT : I

0.1

0.01 0 5 10 15 20 25

REVER SE VOLTAGE : VR[V]

Fig.1 Reverse Current vs. Reverse Voltage

Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C

Ta= 25°C V I

D

R Pulsed

Ta = 75

Ta = 25

Ta= - 25

= 10V

DD

= 1. 5A

=10Ω

G

Data Sheet ES6U2

600

]

500

Ω

400

(ON)[m

DS

300

200

RESIST ANCE : R

100

STATIC DRAIN-SOURCE ON-STATE

0

0246810

Fi g.11 Stat ic D rain- Source On- State Resis tance vs. Gate Source Voltag e

1000

Ta= 25°C f=1MH z V

GS

100

CAPACITANCE : C [pF]

10

0.01 0.1 1 10 100

1

pulsed

℃

(A)

F

0.1

0.01

FORWARD CURRENT : I

0.001 0 0.1 0. 2 0.3 0. 4 0.5 0.6

ID= 0. 8A

ID= 1.5A

GATE-SOU RCE VOLTAGE : VGS[V]

=0V

Crss

vs. Drain- Source Voltag e

FOR WARD VOLTAGE : V

Fi g.2 For ward C urrent vs. F orward Volt age

Ciss

Coss

Ta = 75

Ta = 25

Ta= - 25

Ta= 25°C Pulsed

℃

[V]

F

℃

1000

td(off)

t

100

10

td(on)

SWITC HING TIM E : t [ns]

1

0.01 0.1 1 10

f

t

r

DRAIN-CURRENT : ID[A]

Fi g.12 Swi tching Chara cteri stic s

Ta= 25°C V

= 10V

DD

V

=4.5V

GS

=10Ω

R

G

Pulsed

www.rohm.com

4/5

c

○

2009.12 - Rev.A

F

it

%

V V

F

it

S

FIg.2-2 Gate Charge Waveform

V

Data Sheet ES6U2

zMeasurement circuit

Pulse Width

D

V

GS

R

G

I

D.U.T.

V

DS

R

L

V

DD

ig.1-1 Switching Time Measurement Circu

50%

10%

GS

DS

t

d(on)

10%

t

on

Fig.1-2 Switching Waveforms

90%

t

r

90%

d(off)

t

50%

10

90%

tf

off

V

G

I

D

D.U.T.

I

G(Const.)

V

GS

R

G

ig.2-1 Gate Charge Measurement Circu

V

D

R

L

V

DD

GS

Q

gs

g

Q

gd

Charge

zNotice

1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.

This built-in SBD has low V

F characteristics and therefore, higher leak current. Please consider enough the surrounding

temperature, generating heat of MOSFET and the reverse current.

2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD

protection circuit.

www.rohm.com

5/5

c

○

2009.12 - Rev.A

Notes

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd.

The content specied herein is subject to change for improvement without notice.

The content specied herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specications, which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other par ties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.

Notice

The Products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, communication devices, electronic appliances and amusement devices).

The Products specied in this document are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machiner y, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specied herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

R0039

A

ROHM ES6U2 Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual