ROHM ES6U1 Technical data
<MOSFET>
<Di>
<MOSFET and Di>
1.5V Drive Pch+SBD MOSFET
ES6U1
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET /
Schottky barrier diode
zFeatures
1) Pch MOSFET and schottky barrier diode
are put in WEMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (1.5V drive).
4) Built-in Low V
F schottky barrier diode.
zApplication zInner circuit
Switching
zPackaging specifications
Type
ES6U1
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
WEMT6
Abbreviated symbol : U01
(6)
∗1 ESD protection diode
∗2 Body diode
(1) (2)
(6) (5) (4)
(1) (2) (3)
(5)
∗2
∗1
(4)
(3)
(1) Gate
(2) Source
(3) Anode
(4) Cathode
(5) Drain
(6) Drain
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation W / ELEMENT0.7
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation W / ELEMENT
∗1 60Hz 1cycle
∗2 Mounted on a ceramic board
Power dissipation
Range of storage temperature
∗ Mounted on a ceramic board
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2009 ROHM Co., Ltd. All rights reserved.
Parameter
Continuous
Pulsed
Continuous
Pulsed
Parameter
Symbol
DSS
GSS
D
DP
S
SP
P
D
Symbol
RM
R
I
F
I
FSM
Tj
P
D
Parameter Symbol
D
∗1
∗1
∗2
∗1
∗2
∗
Limits Unit
−12
±10
±1.3
±2.6
−0.5
−2.6
150
Limits Unit
25
20
0.5
2.0
150
0.5
Limits Unit
0.8
−55 to +150
VV
VV
AI
AI
AI
AI
°CTch
VV
VV
A
A
°C
W / TOTALP
°CTstg
2009.10 - Rev.A
<MOSFET>
<MOSFET> Body diode (Source-drain)
<Di>
zElectrical characteristics (Ta=25°C)
Data Sheet ES6U1
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Parameter Symbol
∗Pulsed
I
V
(BR) DSS
I
V
GS (th)
R
DS (on)
C
C
C
t
d (on)
t
d (off)
Q
Q
V
Min. Typ. Max.
GSS
−−±10 µAVGS= ±10V, VDS=0V
Unit
−12 −−VID= −1mA, VGS=0V
DSS
−−−1 µAV
−0.3 −−1.0 V V
− 190 260 I
∗
− 280 390 mΩ
mΩ
D
I
D
− 400 600 mΩ ID= −0.6A, VGS= −1.8V
− 530 1060 I
∗
Y
fs
1.4 −−SV
iss
− 290 − pF V
oss
− 2821− pF V
rss
−
∗
∗
t
r
∗
∗
t
f
∗
Q
g
∗
gs
∗
gd
8
−
10
−
30
−
9
−
2.4
−
0.6
−
0.4
−−nC
Min. Typ. Max.
∗
SD
−−−1.2 V IS= −1.3A, VGS=0VForward voltage
mΩ
D
− pF f= 1MHz
− ns
− ns
− ns
− ns
− nC
− nC
VDD −6V
ID= −0.6A
V
R
R
V
I
D
VGS= −4.5V
Unit
Conditions
= −12V, VGS=0V
DS
= −6V, ID= −1mA
DS
= −1.3A, VGS= −4.5V
= −0.6A, VGS= −2.5V
= −0.2A, VGS= −1.5V
= −6V, ID= −1.3A
DS
= −6V
DS
= 0V
GS
GS
= −4.5V
L
10Ω
G
= 10Ω
−6V
DD
= −1.3A
R
R
L
= 10Ω
G
Conditions
4.6Ω
Parameter Symbol
Forward voltage
Reverse current
Min. Typ. Max.
F
R
I
−−
−−
−−
V
Unit
0.36 V
0.52 V
100
µA
= 0.1A
I
F
= 0.5A
I
F
V
R
= 20V
Conditions
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2009 ROHM Co., Ltd. All rights reserved.
2009.10 - Rev.A
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