Richtek RT8207GQW Schematic [ru]

0 (0)
General Description
The RT8207 provides a complete power supply for both DDRII/DDRIII memory systems. It integrates a synchronous PWM buck controller with a 3A sink/source tracking linear regulator and a buffered low noise reference.
The PWM controller provides the high efficiency, excellent transient response, and high DC output accuracy needed for stepping down high-voltage batteries to generate low voltage chipset RAM supplies in notebook computers. The constant-on-time PWM control scheme handles wide input/output voltage ratios with ease and provides 100ns “instant-on” response to load transients while maintaining a relatively constant switching frequency.
The RT8207 achieves high efficiency at a reduced cost by eliminating the current-sense resistor found in traditional current-mode PWMs. Efficiency is further enhanced by its ability to drive very large synchronous rectifier MOSFETs. The buck conversion allows this device to directly step down high-voltage batteries for the highest possible efficiency.
The 3A sink/source LDO maintains fast transient response only requiring 20μF of ceramic output capacitance. In addition, the LDO supply input is available externally to significantly reduce the total power losses. The RT8207 supports all of the sleep state controls placing VTT at High-Z in S3 and discharging VDDQ, VTT and VTTREF (soft-off) in S4/S5.

RT8207

Complete DDRII/DDRIII Memory Power Supply Controller

Features

z PWM Controller

` Resistor Programmable Current Limit by Low-Side RDS(ON) Sense

` Quick Load-Step Response within 100ns ` 1% VOUT Accuracy Over Line and Load

` Fixed 1.8V (DDRII), 1.5V (DDRIII) or Adjustable 0.75V to 3.3V Output Range

` Battery Input Range 2.5V to 26V

` Resistor Programmable Frequency ` Over/Under Voltage Protection

` 4 Steps Current Limit During Soft-Start

` Drives Large Synchronous-Rectifier FETs ` Power-Good Indicator

z 3A LDO (VTT), Buffered Reference (VTTREF) ` Capable to Sink and Source Up to 3A

` LDO Input Available to Optimize Power Losses ` Requires Only 20μF Ceramic Output Capacitor ` Buffered Low Noise 10mA VTTREF Output

` Accuracy ±20mV for Both VTTREF and VTT ` Supports High-Z in S3 and Soft-Off in S4/S5

z RoHS Compliant and Halogen Free

Applications

z DDRII/DDRIII Memory Power Supplies

z Notebook Computers

z SSTL18, SSTL15 and HSTL Bus Termination

The RT8207 has all of the protection features including

Pin Configurations

 

 

thermal shutdown and is available in the WQFN-24L 4x4

 

 

(TOP VIEW)

 

package.

 

VTT

VLDOIN

BOOT

UGATE

PHASE

LGATE

 

Ordering Information

 

 

 

24

23

22

21

20

19

 

RT8207

 

 

VTTGND

1

 

 

 

 

18

PGND

Package Type

VTTSNS

2

 

 

 

 

17

NC

GND

3

 

GND

 

16

CS

MODE

4

 

 

15

VDDP

QW : WQFN-24L 4x4 (W-Type)

 

 

 

 

VTTREF

5

 

 

 

25

14

VDD

 

 

 

 

Lead Plating System

DEM

6

 

 

 

 

13

PGOOD

7

8

9

10

11

12

G : Green (Halogen Free and Pb Free)

 

 

 

 

 

 

 

 

 

 

Note :

 

NC

VDDQ

FB

S3

S5

TON

 

Richtek products are :

 

 

 

 

WQFN-24L 4x4

 

` RoHS compliant and compatible with the current require-

 

 

 

 

 

 

 

 

 

 

 

ments of IPC/JEDEC J-STD-020.

 

 

 

 

 

 

 

 

` Suitable for use in SnPb or Pb-free soldering processes.

 

 

 

 

 

 

 

 

DS8207-07 March 2011

www.richtek.com

1

RT8207

Marking Information

For marking information, contact our sales representative directly or through a Richtek distributor located in your area.

Typical Application Circuit

 

 

 

12

RT8207

 

 

 

TON

BOOT

 

 

 

15

VDDP

 

 

VDDP

 

 

 

 

 

5V

 

 

 

UGATE

C1

R1

 

 

 

 

 

 

5.1

 

 

 

 

1µF

14

VDD

PHASE

 

 

 

 

 

 

 

C2

 

 

 

 

R3

 

LGATE

 

 

1µF

 

 

R2

 

 

 

 

5.6k

 

 

 

100k

 

16

CS

 

 

 

 

 

 

 

 

13

 

PGOOD

 

 

PGOOD

FB

 

 

 

VTT/VTTREF Control

 

10

S3

 

 

11

 

 

VDDQ Control

 

S5

VLDOIN

 

 

4

 

 

Discharge Mode

 

MODE

VDDQ

 

 

 

 

 

6

 

 

CCM/DEM

 

DEM

VTT

 

 

 

 

3 , Exposed Pad (25)

 

 

GND

VTTSNS

 

 

 

18

 

 

 

PGND

 

 

 

 

 

 

 

1

VTTREF

 

 

 

VTTGND

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

IN

 

 

 

 

R4

 

2.5V to 26V

 

 

 

 

 

 

 

 

 

 

620k

 

 

 

 

 

R5

C9

 

 

 

 

10µF x 3

 

 

22

0

 

 

 

 

C4

 

 

V

 

 

 

 

 

 

 

0.1µF

 

 

VDDQ

 

 

 

 

 

1.2V

21

R6

0

Q1

 

 

 

 

 

BSC09

L1

 

 

 

 

 

 

 

 

 

 

 

20

 

 

4N035

1µH

 

 

 

 

 

 

 

 

19

 

 

 

R7

 

C7

 

 

 

Q2

 

220µF

 

 

 

 

 

 

BSC032N035

C5

R8

C6

 

 

 

 

 

 

 

 

 

6k

9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R9

C9

23

 

 

 

 

10k

0.1µF

 

 

 

 

 

 

8

 

 

 

 

 

 

24

 

 

 

 

 

 

2

 

 

C8

 

 

 

 

 

10µF x 2

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

 

C3

 

 

 

 

 

 

33nF

 

 

 

Figure A. Adjustable Voltage Regulator

 

 

12

VDDP

 

15

 

 

5V

R1

 

C1

 

5.1

 

1µF

14

 

 

 

 

C2

R3

R2

1µF

 

5.6k

100k

 

16

 

 

PGOOD

 

13

 

 

VTT/VTTREF Control

 

10

 

11

VDDQ Control

 

 

4

Discharge Mode

 

 

6

CCM/DEM

 

, Exposed Pad (25)

3

 

 

18

 

 

1

 

 

 

 

V

 

 

 

 

 

 

IN

26V

 

 

 

 

R4

2.5V to

 

 

 

 

 

 

 

 

 

 

620k

 

 

 

 

 

R5

C8

 

RT8207

 

10µF x 2

22

0

C4

TON

BOOT

 

V

 

 

 

 

 

 

0.1µF

 

VDDQ

VDDP

 

 

 

Q1

1.8V/1.5V

 

21

R6

0

UGATE

 

 

BSC09

L1

 

 

 

 

 

 

 

VDD

PHASE

20

 

 

4N035

1µH

 

 

 

 

 

 

 

 

 

 

19

 

 

 

C6

 

LGATE

 

 

R7

 

 

 

Q2

220µF

 

 

 

 

 

 

 

 

 

BSC032N035

C5

 

CS

 

 

 

 

 

 

 

 

 

 

 

PGOOD

VDDQ

8

 

 

 

 

 

23

 

 

 

 

S3

VLDOIN

 

 

 

 

 

 

 

 

 

S5

VTT

24

 

 

 

 

2

 

C7

 

 

MODE

VTTSNS

 

 

 

 

10µF x 2

 

 

5

 

 

 

DEM

VTTREF

 

 

 

 

 

 

C3

 

 

GND

 

 

 

 

 

 

 

 

33nF

 

 

PGND

FB

9

 

VDDP for DDRII

 

VTTGND

 

 

GND for DDRIII

 

 

 

 

 

 

Figure B. Fixed Voltage Regulator

 

 

www.richtek.com

DS8207-07 March 2011

2

 

Richtek RT8207GQW Schematic

RT8207

Function Block Diagram

 

 

 

TRIG

 

 

 

 

 

 

 

 

 

VDDQ

 

 

 

 

On-time

 

 

 

 

 

 

 

 

 

 

 

 

Compute

 

 

 

 

 

 

 

 

 

TON

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1-SHOT

 

 

 

 

R

 

 

 

BOOT

 

 

 

+

 

 

 

 

Comp

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-GM

 

 

 

-

 

 

S

Q

PWM

DRV

UGATE

 

 

+

-

 

 

 

+

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min. TOFF

 

 

 

PHASE

 

 

VREF 0.75V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q

TRIG

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDDP

 

 

 

 

 

 

Latch

 

1-SHOT

 

 

 

 

 

 

 

+

OV

 

 

 

 

 

 

 

115% VREF

 

S1

 

Q

 

 

 

 

DRV

LGATE

 

 

 

-

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FB

 

 

 

-

UV

Latch

 

 

 

 

 

PGND

 

70% VREF

 

S1

 

Q

 

Diode

 

 

 

 

 

 

+

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-

 

Emulation

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

90% VREF

 

+

 

 

 

 

 

 

 

 

 

 

 

 

Thermal

 

 

 

+

-

CS

VDD

 

 

SS Timer

 

 

 

GM

 

 

 

Shutdown

 

 

 

-

+

 

S5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD

10µA

 

 

 

 

 

PWM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DEM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PGOOD

S3

 

Discharge

 

 

 

 

 

 

 

 

 

 

 

VTTREF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mode

 

 

 

 

 

 

 

 

 

 

 

MODE

 

 

 

 

 

 

 

 

 

 

 

 

VLDOIN

 

Select

 

 

 

 

 

 

 

+

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-

 

 

 

 

 

 

 

 

 

 

 

 

+

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

+

 

 

 

 

VTT

 

 

 

 

 

 

 

 

 

-

 

 

 

 

 

 

 

 

 

 

 

 

 

+

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-

 

 

 

 

VTTSNS

 

 

 

 

110% VVTTREF

-

 

 

 

 

 

 

 

 

 

 

+

 

 

 

 

 

GND

 

 

 

 

90% VVTTREF

-

 

 

 

 

 

 

 

 

 

 

 

 

 

 

+

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VTTGND

 

 

DS8207-07

March

2011

 

 

 

 

 

 

 

 

 

 

 

www.richtek.com

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

RT8207

Functional Pin Description

Pin No.

Pin Name

Pin Function

1

VTTGND

Power Ground for the VTT_LDO.

2

VTTSNS

Voltage Sense Input for the VTT_LDO. Connect to the terminal of the VTT_LDO

output capacitor

 

 

3,

GND

Analog Ground. The exposed pad must be soldered to a large PCB and

25 (Exposed Pad)

connected to GND for maximum power dissipation.

4

MODE

Output Discharge Mode Setting Pin. Connect to VDDQ for tracking discharge.

Connect to GND for non-tracking discharge. Connect to VDD for no discharge.

 

 

5

VTTREF

VTTREF Buffered Reference Output.

6

DEM

Diode-Emulation Mode Enable Pin. Connect to VDD will enable diode-emulation

mode. Connect to GND will always operate in forced CCM mode.

 

 

7, 17

NC

No Internal Connection.

 

 

VDDQ Reference Input for VTT and VTTREF. Discharge current sinking terminal

8

VDDQ

for VDDQ non-tracking discharge. Output voltage feedback input for VDDQ

 

 

output if FB pin is connected to VDD or GND

 

 

VDDQ Output Setting Pin. Connect to GND for DDRIII (VDDQ = 1.5V) power

9

FB

supply. The pin should be connect to VDD for DDRII (VDDQ = 1.8V) power supply

or be connected to a resistive voltage divider from VDDQ to GND to adjust the

 

 

 

 

output of PWM from 0.75V to 3.3V.

10

S3

S3 Signal Input.

11

S5

S5 Signal Input

12

TON

The pin is used to set the UGATE on time through a pull-up resistor connecting to

VIN.

 

 

13

PGOOD

Power-Good Open-Drain Output. This pin will be in HIGH state when VDDQ

output voltage is within the target range.

 

 

14

VDD

Supply Input for the Analog Supply.

15

VDDP

Supply Input for the Low Gate Driver.

16

CS

Current Limit Threshold Setting Input. Connect this pin to VDD through the

voltage setting resistor.

 

 

18

PGND

Power Ground for Low-Side MOSFET.

19

LGATE

Low-Side Gate Driver Output for VDDQ.

20

PHASE

External Inductor Connection for VDDQ and it behaves as the current sense

comparator input for Low-Side MOSFET RDS(ON) sensing.

 

 

21

UGATE

High-Side Gate Driver Output for VDDQ.

 

 

 

22

BOOT

Boost Flying Capacitor Connection for VDDQ.

23

VLDOIN

Power Supply for the VTT_LDO.

24

VTT

Power Output for the VTT_LDO

 

 

 

www.richtek.com

DS8207-07 March 2011

4

 

 

 

 

 

 

 

 

RT8207

Absolute Maximum Ratings (Note 1)

 

 

 

 

 

 

z Input Voltage, TON to GND ----------------------------------------------------------------------------------------------

 

 

 

–0.3V to 32V

z BOOT to GND --------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

–0.3V to 38V

z PHASE to GND

 

 

 

 

 

 

 

 

 

 

DC-----------------------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

−0.3V to 32V

<20ns ------------------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

−8V to 38V

z PHASE to BOOT ----------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

–6V to 0.3V

z VDD, VDDP, CS, MODE, S3, S5, VTTSNS, VDDQ, DEM to GND --------------------------------------------

 

 

–0.3V to 6V

z VTTREF, VTT, VLDOIN, FB, PGOOD to GND ----------------------------------------------------------------------

 

 

–0.3V to 6V

z UGATE to PHASE

 

 

 

 

 

 

 

 

 

 

DC-----------------------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

−0.3V to 6V

<20ns ------------------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

−5V to 7.5V

z LGATE to GND

 

 

 

 

 

 

 

 

 

 

DC-----------------------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

−0.3V to 6V

<20ns ------------------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

−2.5V to 7.5V

z PGND, VTTGND toGND -------------------------------------------------------------------------------------------------

 

 

 

–0.3V to 0.3V

z Power Dissipation, PD @ TA = 25°C

 

 

 

 

 

 

 

WQFN-24L 4x4 -----------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

1.923W

 

 

z Package Thermal Resistance (Note 2)

 

 

 

 

 

 

 

WQFN-24L 4x4, θJA -------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

52°C/W

 

 

WQFN-24L 4x4, θJC

------------------------------------------------------------------------------------------------------

 

 

 

 

 

7°C/W

 

 

z Junction Temperature -----------------------------------------------------------------------------------------------------

 

 

 

150°C

 

 

z Lead Temperature (Soldering, 10 sec.) -------------------------------------------------------------------------------

 

 

 

260°C

 

 

z Storage Temperature Range --------------------------------------------------------------------------------------------

 

 

 

–65°C to 150°C

z ESD Susceptibility

(Note 3)

 

 

 

 

 

 

 

HBM (Human Body Mode) ----------------------------------------------------------------------------------------------

 

 

 

2kV

 

 

MM (Machine Mode)

------------------------------------------------------------------------------------------------------

 

 

 

 

 

200V

 

 

Recommended Operating Conditions (Note 4)

 

 

 

 

 

 

z Input Voltage, VIN ----------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

2.5V to 26V

z Control Voltage, VDDP, VDD ----------------------------------------------------------------------------------------------

 

 

 

4.5V to 5.5V

z Junction Temperature Range --------------------------------------------------------------------------------------------

 

 

 

40°C to 125°C

z Ambient Temperature Range --------------------------------------------------------------------------------------------

 

 

 

40°C to 85°C

Electrical Characteristics

 

 

 

 

 

 

 

(VDDP = VDD = 5V, VIN = 15V, DEM = VDD , RTON = 1MΩ, TA = 25°C, unless otherwise specified)

 

 

 

 

 

Parameter

 

Symbol

 

Test Conditions

Min

Typ

Max

 

Unit

 

PWM Controller

 

 

 

 

 

 

 

 

 

 

Quiescent Supply Current

 

 

FB forced above the regulation point,

--

470

1000

 

μA

 

(VDD + VDDP)

 

 

 

VS5 = 5V, VS3 = 0V

 

 

 

 

 

 

 

 

 

 

 

TON Operating Current

 

 

RTON = 1MΩ

--

15

--

 

μA

 

IVLDOIN BIAS Current

 

 

VS5 = VS3 = 5V, VTT = No Load

--

1

--

 

μA

 

IVLDOIN Standby Current

 

 

VS5 = 5V, VS3= 0, VTT = No Load

--

0.1

10

 

μA

 

 

 

 

 

 

 

 

To be continued

 

 

 

 

 

 

 

 

 

DS8207-07 March 2011

 

 

 

www.richtek.com

 

 

 

 

 

 

 

 

 

5

RT8207

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

VDD + VDDP

--

0.1

10

 

 

Shutdown current

 

TON

--

0.1

5

μA

 

(VS5 = VS3 = 0V)

 

S3/S5/DEM = 0V

−1

0.1

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IVLDOIN

--

0.1

1

 

 

FB Reference Voltage

VREF

VDD = 4.5V to 5.5V

0.742

0.75

0.758

V

 

Fixed VDDQ Output Voltage

 

FB = GND

--

1.5

--

V

 

 

FB = VDD

--

1.8

--

 

 

 

 

 

FB Input Bias Current

 

FB = 0.75V

−1

0.1

1

μA

 

VDDQ Voltage Range

 

 

0.75

--

3.3

V

 

On-Time, VIN = 15V

 

RTON = 1MΩ

267

334

401

ns

 

Minimum Off-Time

 

 

250

400

550

ns

 

VDDQ Input Resistance

 

 

--

100

--

 

VDDQ Shutdown Discharge

 

VS5 = GND

--

15

--

Ω

 

Resistance

 

 

 

 

 

 

 

 

 

Current Sensing

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CS Sink Current

 

VCS > 4.5V, After UV Blank Time

9

10

11

μA

 

Current Comparator Offset

 

GND − PHASE

−15

--

15

mV

 

Zero Crossing Threshold

 

PHASE − GND, DEM = 5V

−10

--

5

mV

 

Fault Protection

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current Limit (Positive)

 

GND − PHASE, RCS = 5kΩ

35

50

65

mV

 

 

GND − PHASE, RCS = 20kΩ

170

200

230

mV

 

 

 

 

Output UV Threshold

 

 

60

70

80

%

 

OVP Threshold

 

With respect to error comparator

10

15

20

%

 

 

threshold

 

 

 

 

 

 

 

 

OV Fault Delay

 

FB forced above OV threshold

--

20

--

μs

 

VDDP Under voltage Lockout

 

Rising edge, hysteresis = 20mV,

3.9

4.2

4.5

V

 

Threshold

 

PWM disabled below this level

 

 

 

 

 

 

 

Current Limit Step Time at Soft Start

 

Each step

--

128

--

clks

 

UV Blank Time

 

From S5 signal going high

--

512

--

clks

 

Thermal Shutdown

 

Hysteresis = 10°C

--

165

--

°C

 

 

 

 

 

 

 

 

 

Driver On-Resistance

 

 

 

 

 

 

 

UGATE Gate Driver (pull up)

 

(BOOT − PHASE) forced to 5V

--

2

4

Ω

 

UGATE Gate Driver (sink)

 

(BOOT − PHASE) forced to 5V

--

1

3

Ω

 

LGATE Gate Driver (pull up)

 

LGATE, High State (source)

--

2.5

6

Ω

 

LGATE Gate Driver (pull down)

 

LGATE, Low State (sink)

--

0.6

1.5

Ω

 

UGATE Gate Driver Source/Sink

 

UGATE forced to 2.5V,

--

1

--

A

 

Current

 

(BOOT − PHASE) forced to 5V

 

 

 

 

 

 

 

LGATE Gate Driver Source Current

 

LGATE Forced to 2.5V

--

1

--

A

 

 

 

 

 

 

 

 

 

LGATE Gate Driver Sink Current

 

LGATE Forced to 2.5V

--

3

--

A

 

Dead Time

 

LGATE Rising (PHASE = 1.5V)

--

40

--

ns

 

 

UGATE Rising

--

40

--

 

 

 

 

 

 

 

 

 

 

 

 

 

Internal boost charging switch on

 

VDDP to BOOT, 10mA

--

--

80

Ω

 

resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

To be continued

 

 

 

 

 

 

 

 

www.richtek.com

 

 

 

DS8207-07 March 2011

6

 

 

 

 

 

 

 

RT8207

Parameter

Symbol

 

Test Conditions

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

Logic I/O

 

 

 

 

 

 

 

 

 

 

 

Logic Input Low Voltage

 

S3, S5, DEM Low

 

--

--

0.8

V

 

 

 

 

 

 

 

 

 

Logic Input High Voltage

 

S3, S5, DEM High

 

2

--

--

V

 

 

 

 

 

 

 

 

Logic Input Current

 

S3/S5/DEM = VDD/GND

−1

0

1

μA

 

 

 

 

 

 

 

 

 

PGOOD (upper side threshold decide by OV threshold)

 

 

 

 

 

 

 

 

 

 

 

 

 

Trip Threshold (falling)

 

Measured at FB, with respect to

−13

−10

−7

%

 

reference, no load. Hysteresis = 3%

 

 

 

 

 

 

Fault Propagation Delay

 

Falling edge, FB forced below

--

2.5

--

μs

 

PGOOD trip threshold

 

 

 

 

 

 

Output Low Voltage

 

ISINK = 1mA

 

 

 

--

--

0.4

V

Leakage Current

 

High state, forced to 5.0V

--

--

1

μA

VTT LDO TA = 25°C, Unless Otherwise specification

 

 

 

 

 

 

 

 

 

VDDQ = VLDOIN = 1.5V/1.8V,

−20

--

+20

 

 

 

IVTT = 0A

 

 

 

 

 

 

 

 

 

 

 

 

 

VTT Output Tolerance

VVTTTOL

VDDQ = VLDOIN = 1.5V/1.8V,

−30

--

+30

mV

IVTT = 1A

 

 

 

 

 

VDDQ = VLDOIN = 1.5V/1.8V,

−40

--

+40

 

 

 

IVTT = 2A,

 

 

 

 

 

 

 

 

 

 

VDDQ

×0.95 ,

 

 

 

 

 

 

VTT =

2

 

 

3

--

6

 

VTT Source Current Limit

IVTTOCLSRC

 

 

 

 

 

A

PGOOD = High

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VTT = 0V

 

 

 

--

2

--

 

 

 

 

VDDQ

×1.05

 

 

 

 

 

 

VTT =

2

 

 

3

--

6

 

VTT Sink Current Limit

IVTTOCLSNK

 

 

 

 

 

A

PGOOD = High

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VTT = VDDQ

 

 

 

--

2

--

 

 

 

S5 = 5V, S3 = 0V,

 

 

 

 

 

VTT Leakage Current

IVTTLK

 

VDDQ

 

 

−10

--

10

μA

 

 

VTT =

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VTTFB Leakage Current

IVTTSNSLK

ISINK = 1mA

 

 

 

−1

--

1

μA

VTT Discharge Current

IDSCHRG

VDDQ = 0V, VTT = 0.5V,

10

30

--

mA

S5 = S3 = 0V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDDQ

 

 

 

 

VTTREF Output Voltage

VVTTREF

VVTTREF =

 

 

 

 

--

0.9/0.75

--

V

 

2

 

 

 

 

 

 

 

 

 

 

 

VLDOIN = VDDQ = 1.5V,

−15

--

+15

 

VDDQ/2, VTTREF Output

 

IVTTREF < 10mA

 

 

VVTTREFTOL

 

 

 

 

mV

Voltage Tolerance

VLDOIN = VDDQ = 1.8V,

−18

--

+18

 

 

IVTTREF < 10mA

 

 

 

 

 

 

 

 

 

VTTREF Source Current

IVTTREFOCL

VVTTREF = 0V

 

 

10

40

80

mA

Limit

 

 

 

 

 

 

 

 

 

 

 

 

 

DS8207-07 March 2011

www.richtek.com

 

7

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