RECTRON TFMBJ78, TFMBJ75A, TFMBJ75, TFMBJ70A, TFMBJ70 Datasheet
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RECTRON |
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T V S |
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T F M B J |
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SEMICONDUCTOR |
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TECHNICAL SPECIFICATION
SERIES
GPP TRANSIENT VOLTAGE SUPPRESSOR
600 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
*Plastic package has underwriters laboratory
*Glass passivated chip construction
*600 watt surage capability at 1ms
*Excellent clamping capability
* Low zener impedance |
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DO-214AA |
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* Fast response time |
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Ratings at 25 oC ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
DEVICES FOR |
BIPOLAR |
APPLICATIONS |
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For Bidirectional use C or CA suffix for types TFMBJ5.0 thru TFMBJ170 |
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Electrical characteristics apply in both direction |
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MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) |
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RATINGS |
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SYMBOL |
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VALUE |
UNITS |
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Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1) |
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PPPM |
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Minimum 600 |
Watts |
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Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 ) |
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IPPM |
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SEE TABLE 1 |
Amps |
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Steady State Power Dissipation at TL = 75oC (Note 2) |
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PM(AV) |
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5.0 |
Watts |
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Peak Forward Surge Current 8.3mS single half sine-wave |
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superimposed on rated load (JEDEC method) (Note 2,3) |
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IFSM |
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100 |
Amps |
unidirectional only |
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Maximum Instantaneous Forward Voltage at 50A for unidirectional |
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VF |
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SEE NOTE 4 |
Volts |
only (Note 3,4) |
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Operating and Storage Temperature Range |
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TJ, TSTG |
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-55 to + 150 |
0 C |
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25 |
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C per Fig.2. |
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1998-8 |
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2.Mounted on 0.2 X 0.2”( 5.0 X 5.0mm ) copper pad to each terminal.
3.Lead temperature at TL = 25oC
4.Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.
5.VF = 3.5V on TFMBJ-5.0 thru TFMBJ-90 devices and VF = 5.0V on TFMBJ-100 thru TFMBJ-170 devices.
RECTRON 
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