RECTRON P4KE10, P4KE110, P4KE120, P4KE12A, P4KE120A Datasheet
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RECTRON |
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T V S |
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P4KE |
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SEMICONDUCTOR |
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TECHNICAL SPECIFICATION
SERIES
GPP TRANSIENT VOLTAGE SUPPRESSOR
400 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
*Plastic package has underwriters laboratory
*Glass passivated chip construction
*400 watt surage capability at 1ms
*Excellent clamping capability
* Low zener impedance |
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DO-41 |
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* Fast response time |
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Ratings at 25 oC ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load,
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
DEVICES FOR |
BIPOLAR |
APPLICATIONS |
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For Bidirectional use C or CA suffix for types P4KE6.8 thru P4KE400 |
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Electrical characteristics apply in both direction |
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MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) |
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RATINGS |
SYMBOL |
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VALUE |
UNITS |
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Peak Power Dissipation at TA = 25oC, TP = 1mS ( Note 1 ) |
PPPM |
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Minimum 400 |
Watts |
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Steady State Power Dissipation at TL = 75oC lead lengths, |
PD |
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1.0 |
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Watts |
.375” ( 9.5 mm ) ( Note 2 ) |
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Peak Forward Surge Current, 8.3ms single half sine wave- |
IFSM |
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40 |
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Amps |
superimposed on rated load( JEDEC METHOD ) ( NoteS 3 ) |
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Maximum Instantaneous Forward Current at 25A for |
VF |
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3.5/6.5 |
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Volts |
unidirectional only ( Note 4 ) |
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Operating and Storage Temperature Range |
TJ, TSTG |
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-65 to + 175 |
0 C |
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NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25oC per Fig.2. |
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1998-8 |
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2. Mounted on 1.6 X 1.6” ( 40 X 40mm ) per Fig. 5 |
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Back |
3. VF = 3.0V max. for devices of V(BR) < 200V and VF = 6.5 Volts max. for devices of V(BR) > 200V. |
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RECTRON 
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