RECTRON HFM308, HFM307, HFM306, HFM305, HFM304 Datasheet

RECTRON		HFM301
		THRU
SEMICONDUCTOR

TECHNICAL SPECIFICATION

HFM308

SURFACE MOUNT GLASS PASSIVATED

HIGH EFFICIENCY SILICON RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes

FEATURES

*Glass passivated device

*Ideal for surface mounted applications

*Low leakage current

*Metallurgically bonded construction

* Mounting position: Any

DO-214AB

* Weight: 0.24 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)

RATINGS

SYMBOL

HFM301

HFM302

HFM303

HFM304

HFM305

HFM306

HFM307

HFM308

UNITS

Maximum Recurrent Peak Reverse Voltage

VRRM

50

100

200

300

400

600

800

1000

Volts

Maximum RMS Volts

VRMS

35

70

140

210

280

420

560

700

Volts

Maximum DC Blocking Voltage

VDC

50

100

200

300

400

600

800

1000

Volts

Maximum Average Forward Current

IO

3.0

Amps

at TA = 50oC

Peak Forward Surge Current 8.3 ms single half sine-wave

IFSM

200

150

Amps

superimposed on rated load (JEDEC method)

Typical Junction Capacitance (Note 2)

CJ

70

50

pF

Operating and Storage Temperature Range

TJ, TSTG

-65 to + 175

0C

ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)

CHARACTERISTICS

SYMBOL

HFM301

HFM302

HFM303

HFM304

HFM305

HFM306

HFM307

HFM308

UNITS

Maximum Forward Voltage at 3.0A DC

VF

1.0

1.3

1.7

Volts

Maximum Full Load Reverse Current, Full cycle Average TA = 55oC

50

uAmps

Maximum DC Reverse Current at

@TA = 25oC

IR

10

uAmps

Rated DC Blocking Voltage

@TA = 125oC

150

uAmps

Maximum Reverse Recovery Time (Note 1)

trr

50

75

nSec

NOTES : 1. Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.

2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.

1998-8

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