Philips NE5539D, NE5539N, NE5539F, SE5539F, SE5539N Datasheet
Philips Semiconductors RF Communications Products Product specification
NE/SE5539High frequency operational amplifier
229
April 15, 1992 853-0814 06456
DESCRIPTION
The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic
operational amplifier for use in video amplifiers, RF amplifiers, and
extremely high slew rate amplifiers.
Emitter-follower inputs provide a true differential input impedance
device. Proper external compensation will allow design operation
over a wide range of closed-loop gains, both inverting and
non-inverting, to meet specific design requirements.
FEATURES
•Bandwidth
– Unity gain - 350MHz
– Full power - 48MHz
– GBW - 1.2GHz at 17dB
•Slew rate: 600/Vµs
•A
VOL
: 52dB typical
•Low noise - 4nV√Hz typical
•MIL-STD processing available
APPLICATIONS
•High speed datacom
•Video monitors & TV
PIN CONFIGURATION
+ INPUT
NC
-V
SUPPLY
- INPUT
NC
NC
NC
V
OS
ADJ
/
A
V
ADJ
GROUND
+V
NC
OUTPUT
D, F, N Packages
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
FREQUENCY
COMPENS.
+ –
•Satellite communications
•Image processing
•RF instrumentation & oscillators
•Magnetic storage
•Military communications
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
14-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE5539N 0405B
14-Pin Plastic Small Outline (SO) package 0 to +70°C NE5539D 0175D
14-Pin Ceramic Dual In-Line Package 0 to +70°C NE5539F 0581B
14-Pin Ceramic Dual In-Line Package -55 to +125°C SE5539F 0581B
ABSOLUTE MAXIMUM RATINGS
1
SYMBOL
PARAMETER RATING UNITS
V
CC
Supply voltage ±12 V
P
DMAX
Maximum power dissipation,
T
A
= 25°C (still-air)
2
F package
N package
D package
1.17
1.45
0.99
W
W
W
T
A
Operating temperature range
NE
SE
0 to 70
-55 to +125
°C
°C
T
STG
Storage temperature range -65 to +150 °C
T
J
Max junction temperature 150 °C
T
SOLD
Lead soldering temperature (10sec max) +300 °C
NOTES:
1. Differential input voltage should not exceed 0.25V to prevent excesive input bias current and common-mode voltage 2.5V. These voltage
limits may be exceeded if current is limited to less than 10mA.
2. Derate above 25°C, at the following rates:
F package at 9.3mW/°C
N package at 11.6mW/°C
D package at 7.9mW/°C
Philips Semiconductors RF Communications Products Product specification
NE/SE5539High frequency operational amplifier
April 15, 1992
230
EQUIVALENT CIRCUIT
(–) 14
INVERTING INPUT
(+) 1
NON–INVERTING
INPUT
5
(3) –V
CC
(7) GRD
(8) OUTPUT
(10) +V
CC
(12) FREQUENCY COMP.
2.2k
R
18
R
19
R
3
R
5
R
2
R
6
R
8
Q
1
Q
2
Q
4
Q
3
Q
6
Q
5
Q
7
Q
8
R
20
R
1
R
4
R
21
R
9
R
10
R
7
R
17
R
16
Q
9
Q
10
R
13
R
11
R
12
R
14
R
15
Q
11
DC ELECTRICAL CHARACTERISTICS
VCC = ±8V, TA = 25°C; unless otherwise specified.
SE5539 NE5539
SYMBOL
PARAMETER
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX
UNITS
Over temp 2 5
VOSInput offset voltage
VO = 0V, RS = 100Ω
TA = 25°C
2 3 2.5 5
mV
∆VOS/∆T 5 5 µV/°C
Over temp 0.1 3
IOSInput offset current
TA = 25°C
0.1 1 2
µA
∆IOS/∆T 0.5 0.5 nA/°C
Over temp 6 25
IBInput bias current
TA = 25°C
5 13 5 20
µA
∆IB/∆T 10 10 nA/°C
F = 1kHz, RS = 100Ω, VCM ±1.7V 70 80 70 80
CMRR
Common mode rejection ratio
Over temp 70 80
dB
R
IN
Input impedance 100 100 kΩ
R
OUT
Output impedance 10 10 Ω
Philips Semiconductors RF Communications Products Product specification
NE/SE5539High frequency operational amplifier
April 15, 1992
231
DC ELECTRICAL CHARACTERISTICS (Continued)
VCC = ±8V, TA = 25°C; unless otherwise specified.
SE5539 NE5539
SYMBOL
PARAMETER
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX
UNITS
V
OUT
Output voltage swing
RL = 150Ω to GND and
470Ω to -V
CC
+Swing
-Swing
+2.3
-1.7
+2.7
-2.2
V
RL = 25Ω to GND
Over temp
+Swing
-Swing
+2.3
-1.5
+3.0
-2.1
V
OUT
Output voltage swing
RL = 25Ω to GND
T
A
= 25°C
+Swing
-Swing
+2.5
-2.0
+3.1
-2.7
V
VO = 0, R1 = ∞, Over temp 14 18
I
CC+
Positive supply current
VO = 0, R1 = ∞, TA = 25°C 14 17 14 18
mA
VO = 0, R1 = ∞, Over temp 11 15
I
CC-
Negative supply current
VO = 0, R1 = ∞, TA = 25°C 11 14 11 15
mA
∆VCC = ±1V, Over temp 300 1000
PSRR
Power supply rejection ratio
∆VCC = ±1V, TA = 25°C 200 1000
µV/V
A
VOL
Large signal voltage gain
VO = +2.3V, -1.7V, RL = 150Ω to
GND, 470Ω to -V
CC
47 52 57 dB
VOL
VO = +2.3V, -1.7V
Over
temp
A
VOL
Large signal voltage gain
RL = 2Ω to GND TA = 25°C 47 52 57
dB
VOL
VO = +2.5V, -2.0V
Over
temp
46 60
A
VOL
Large signal voltage gain
RL = 2Ω to GND TA = 25°C 48 53 58
dB
DC ELECTRICAL CHARACTERISTICS
VCC = ±6V, TA = 25°C; unless otherwise specified.
SE5539
SYMBOL
PARAMETER
TEST CONDITIONS
MIN TYP MAX
UNITS
Over temp 2 5
VOSInput offset voltage
TA = 25°C 2 3
mV
Over temp 0.1 3
IOSInput offset current
TA = 25°C 0.1 1
µA
Over temp 5 20
IBInput bias current
TA = 25°C 4 10
µA
CMRR Common-mode rejection ratio VCM = ±1.3V, RS = 100Ω 70 85 dB
Over temp 11 14
I
CC+
Positive supply current
TA = 25°C 11 13
mA
Over temp 8 11
I
CC-
Negative supply current
TA = 25°CmA 8 10
mA
Over temp 300 1000
PSRR
Power supply rejection ratio
∆VCC = ±1V
TA = 25°C
µV/V
Over +Swing +1.4 +2.0
RL = 150Ω to GND temp –Swing –1.1 –1.7
V
OUT
Output voltage swing
and 390Ω to –V
CC
TA = +Swing +1.5 +2.0
V
25°C –Swing –1.4 –1.8
A
A
Large signal voltage gain
Large signal voltage gain
dB
dB
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