Philips LZ1418E100R Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
LZ1418E100R
NPN microwave power transistor
Product specification
Supersedes data of June 1992
1997 Feb 18
Philips Semiconductors Product specification
NPN microwave power transistor LZ1418E100R
FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor provides excellent
current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
and excellent lifetime
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Internal input and output prematching ensures good
stability and allows an easier design of wideband
circuits.
APPLICATIONS
• Common emitter class A amplifiers in CW conditions for
military and professional applications between
1.4 to 1.8 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the emitter
connected to the flange.
PINNING - SOT443A
PIN DESCRIPTION
1 collector
2 base
3 emitter connected to flange
handbook, halfpage
1
2
Top view
Fig.1 Simplified outline and symbol.
c
b
3
e
MAM314
QUICK REFERENCE DATA
Microwave performance up to T
MODE OF OPERATION
=25°C in a common emitter class A wideband amplifier.
mb
f
(GHz)
V
(V)
CE
I
(A)
C
P
L1
(W)
G
po
(dB)
Zi; Z
(Ω)
L
Class-A (CW) 1.4 to 1.8 16 2 ≥9 ≥10 see Fig 7
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18 2
Philips Semiconductors Product specification
NPN microwave power transistor LZ1418E100R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage open emitter − 45 V
collector-emitter voltage RBE= 220 Ω−30 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 3V
collector current (DC) − 4A
total power dissipation Tmb≥ 75 °C − 45 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature at 0.2 mm from flange;
− 235 °C
t ≤ 10 s
10
handbook, halfpage
I
C
(A)
1
−1
10
−2
10
110
Tmb≤ 75°C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE≤ 220 Ω.
(1) (2)
Fig.2 DC SOAR.
MGL003
2
V
(V)
CE
10
handbook,
P
(W)
50
tot
40
30
20
10
0
0 50 100 200
150
Tmb (°C)
Fig.3 Power derating curve.
MGD970
1997 Feb 18 3
Philips Semiconductors Product specification
NPN microwave power transistor LZ1418E100R
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Note
1. See
CHARACTERISTICS
=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
CER
I
CEO
I
EBO
h
FE
thermal resistance from junction to mounting-base Tj=75°C 2.2 K/W
thermal resistance from mounting-base to heatsink Tj=75°C; note 1 0.2 K/W
“Mounting recommendations in the General part of handbook SC19a”.
collector cut-off current VCB= 20 V; IE=0 − 2mA
V
= 40 V; IE=0 − 20 mA
CB
collector cut-off current VCE= 30 V; RBE= 220 Ω− 20 mA
collector cut-off current VCE= 20 V; IB=0 − 20 mA
emitter cut-off current VEB= 1.5 V; IC=0 − 200 µA
DC current gain VCE=3V; IC=2A 15 − 100
APPLICATION INFORMATION
Microwave performance up to T
MODE OF OPERATION
=25°C in a common emitter class-A wideband amplifier; note 1.
mb
f
(GHz)
V
(V)
CE
I
C
(A)
Class-A (CW) 1.4 to 1.8 16 2 ≥9
typ. 10
Note
1. Amplifier consists of test circuit board without any additional tuning.
P
L1
(W)
G
po
(dB)
≥10
typ. 11
Zi; Z
L
(Ω)
see Fig 7
1997 Feb 18 4
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