Philips IRFZ48N Datasheet
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOS
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using V
’trench’ technology. The device I
featuresverylowon-state resistance P
and has integral zener diodes giving T
ESD protection up to 2kV. It is R
intended for use in switched mode resistance VGS = 10 V
power supplies and general purpose
switching applications.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
TM
transistor
DS
D
tot
j
DS(ON)
Drain-source voltage 55 V
Drain current (DC) 64 A
Total power dissipation 140 W
Junction temperature 175 ˚C
Drain-source on-state 16 mΩ
tab
d
g
tab drain
123
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
±V
I
D
I
D
I
DM
P
T
DS
DGR
tot
stg
GS
, T
j
Drain-source voltage - - 55 V
Drain-gate voltage RGS = 20 kΩ -55V
Gate-source voltage - - 20 V
Drain current (DC) Tmb = 25 ˚C - 64 A
Drain current (DC) Tmb = 100 ˚C - 45 A
Drain current (pulse peak value) Tmb = 25 ˚C - 210 A
Total power dissipation Tmb = 25 ˚C - 140 W
Storage & operating temperature - - 55 175 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor Human body model - 2 kV
voltage, all pins (100 pF, 1.5 kΩ)
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-mb
th j-a
Thermal resistance junction to - - 1.1 K/W
mounting base
Thermal resistance junction to in free air 60 - K/W
ambient
February 1999 1 Rev 1.000
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOS
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
±V
(BR)GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
TM
transistor
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2 3.0 4.0 V
Tj = 175˚C 1 - - V
Tj = -55˚C - - 4.4 V
Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA
Tj = 175˚C - - 500 µA
Gate source leakage current VGS = ±10 V; VDS = 0 V - 0.02 1 µA
Tj = 175˚C - - 20 µA
Gate-source breakdown IG = ±1 mA; 16 - - V
voltage
Drain-source on-state VGS = 10 V; ID = 25 A - 12 16 mΩ
resistance Tj = 175˚C - - 30 mΩ
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
C
C
C
Q
Q
Q
t
t
t
t
L
fs
iss
oss
rss
g(tot)
gs
gd
d on
r
d off
f
d
Forward transconductance VDS = 25 V; ID = 25 A 8 39 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 2200 2900 pF
Output capacitance - 500 600 pF
Feedback capacitance - 200 270 pF
Total gate charge ID = 50 A; V
= 44 V; VGS = 10 V - - 85 nC
DD
Gate-source charge - - 19 nC
Gate-drain (Miller) charge - - 37 nC
Turn-on delay time VDD = 30 V; ID = 25 A; - 18 26 ns
Turn-on rise time VGS = 10 V; RG = 10 Ω - 3585ns
Turn-off delay time Resistive load - 45 60 ns
Turn-off fall time - 30 45 ns
Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
L
d
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
L
s
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
February 1999 2 Rev 1.000
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOS
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
SD
t
rr
Q
rr
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
TM
transistor
Continuous reverse drain - - 64 A
current
Pulsed reverse drain current - - 210 A
Diode forward voltage IF = 25 A; VGS = 0 V - 0.95 1.2 V
IF = 65 A; VGS = 0 V - 1.0 - V
Reverse recovery time IF = 65 A; -dIF/dt = 100 A/µs; - 57 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.14 - µC
Drain-source non-repetitive ID = 65 A; VDD ≤ 25 V; - - 200 mJ
unclamped inductive turn-off VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C
energy
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Normalised Power Derating
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
D 25 ˚C
= f(Tmb)
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Normalised Current Derating
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Tmb); conditions: VGS ≥ 5 V
D 25 ˚C
February 1999 3 Rev 1.000
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