Philips IRFZ48N Datasheet

Philips Semiconductors Product specification

N-channel enhancement mode

IRFZ48N

TrenchMOSTM transistor

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

SYMBOL

PARAMETER

MAX.

UNIT

standard level field-effect power

transistor in a plastic envelope using

VDS

Drain-source voltage

55

V

'trench' technology. The device

ID

Drain current (DC)

64

A

features very low on-state resistance

Ptot

Total power dissipation

140

W

and has integral zener diodes giving

Tj

Junction temperature

175

˚C

ESD protection up to 2kV. It is

RDS(ON)

Drain-source on-state

16

mΩ

intended for use in switched mode

resistance

VGS = 10 V

power supplies and general purpose

switching applications.

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

d

tab

1

gate

2

drain

3

source

g

tab

drain

1 2 3

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	Drain-source voltage	-	-	55	V
VDGR	Drain-gate voltage	RGS = 20 kΩ	-	55	V
±VGS	Gate-source voltage	-	-	20	V
ID	Drain current (DC)	Tmb = 25 ˚C	-	64	A
ID	Drain current (DC)	Tmb = 100 ˚C	-	45	A
IDM	Drain current (pulse peak value)	Tmb = 25 ˚C	-	210	A
Ptot	Total power dissipation	Tmb = 25 ˚C	-	140	W
Tstg, Tj	Storage & operating temperature	-	- 55	175	˚C

ESD LIMITING VALUE

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VC	Electrostatic discharge capacitor	Human body model	-	2	kV
	voltage, all pins	(100 pF, 1.5 kΩ)

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance junction to	-	-	1.1	K/W
	mounting base
Rth j-a	Thermal resistance junction to	in free air	60	-	K/W
	ambient

February 1999

1

Rev 1.000

Philips Semiconductors Product specification

N-channel enhancement mode						IRFZ48N
TrenchMOSTM transistor
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
V(BR)DSS	Drain-source breakdown	VGS = 0 V; ID = 0.25 mA;		55	-	-	V
	voltage	Tj = -55˚C		50	-	-	V
VGS(TO)	Gate threshold voltage	VDS = VGS; ID = 1 mA		2	3.0	4.0	V
		Tj	= 175˚C	1	-	-	V
		Tj = -55˚C		-	-	4.4	V
IDSS	Zero gate voltage drain current	VDS = 55 V; VGS = 0 V;		-	0.05	10	μA
		Tj	= 175˚C	-	-	500	μA
IGSS	Gate source leakage current	VGS = ±10 V; VDS = 0 V		-	0.02	1	μA
		Tj	= 175˚C	-	-	20	μA
±V(BR)GSS	Gate-source breakdown	IG = ±1 mA;		16	-	-	V
	voltage						mΩ
RDS(ON)	Drain-source on-state	VGS = 10 V; ID = 25 A		-	12	16
	resistance	Tj	= 175˚C	-	-	30	mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
gfs	Forward transconductance	VDS = 25 V; ID = 25 A		8	39	-	S
Ciss	Input capacitance	VGS = 0 V; VDS = 25 V; f = 1 MHz		-	2200	2900	pF
Coss	Output capacitance			-	500	600	pF
Crss	Feedback capacitance			-	200	270	pF
Qg(tot)	Total gate charge	ID = 50 A; VDD = 44 V; VGS = 10 V		-	-	85	nC
Qgs	Gate-source charge			-	-	19	nC
Qgd	Gate-drain (Miller) charge			-	-	37	nC
td on	Turn-on delay time	VDD = 30 V; ID = 25 A;		-	18	26	ns
tr	Turn-on rise time	VGS = 10 V; RG = 10 Ω		-	35	85	ns
td off	Turn-off delay time	Resistive load		-	45	60	ns
tf	Turn-off fall time			-	30	45	ns
Ld	Internal drain inductance	Measured from contact screw on		-	3.5	-	nH
		tab to centre of die
Ld	Internal drain inductance	Measured from drain lead 6 mm		-	4.5	-	nH
		from package to centre of die
Ls	Internal source inductance	Measured from source lead 6 mm		-	7.5	-	nH
		from package to source bond pad

February 1999

2

Rev 1.000

Philips Semiconductors Product specification

N-channel enhancement mode					IRFZ48N
TrenchMOSTM transistor
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
IDR	Continuous reverse drain		-	-	64	A
	current
IDRM	Pulsed reverse drain current		-	-	210	A
VSD	Diode forward voltage	IF = 25 A; VGS = 0 V	-	0.95	1.2	V
		IF = 65 A; VGS = 0 V	-	1.0	-	V
trr	Reverse recovery time	IF = 65 A; -dIF/dt = 100 A/ms;	-	57	-	ns
Qrr	Reverse recovery charge	VGS = -10 V; VR = 30 V	-	0.14	-	mC
AVALANCHE LIMITING VALUE
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
WDSS	Drain-source non-repetitive	ID = 65 A; VDD £ 25 V;	-	-	200	mJ
	unclamped inductive turn-off	VGS = 10 V; RGS = 50 W; Tmb = 25 ˚C
	energy

120	PD%					Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0	0	20	40	60	80	100	120	140	160	180
					Tmb / C
	Fig.1.		Normalised power dissipation.
		PD% = 100×PD/PD 25 ˚C = f(Tmb)

ID%					Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0	20	40	60	80	100	120	140	160	180
				Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100×ID/ID 25 ˚C = f(Tmb); conditions: VGS ³ 5 V

February 1999

3

Rev 1.000