Philips CGY887 User Manual

DISCRETE SEMICONDUCTORS

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ook, halfpage

M3D252

CGY887

870 MHz, 21.5 dB gain
push-pull amplifier

Product specification
Supersedes data of 2002 June 07

2002 Jun 27

Philips Semiconductors Product specification

870 MHz, 21.5 dB gain push-pull amplifier CGY887

FEATURES

• Superior linearity

• Extremely low noise

• Rugged construction

• Gold metallization ensures excellent reliability

• Excellent gain behaviour over temperature.

APPLICATIONS

• CATV systems operating in the 40 to 870 MHz
frequency range.

DESCRIPTION

Hybrid dynamic range amplifier module in a SOT115J
package operating with a voltage supply of 24 V (DC),
employing both GaAs and Si dies.

QUICK REFERENCE DATA

PINNING - SOT115J

PIN DESCRIPTION

1 input
2 common
3 common
5+V

B

7 common
8 common
9 output

handbook, halfpage

Side view

2

351

Fig.1 Simplified outline.

789

MSA319

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

G

p

power gain f = 50 MHz 21.2 21.8 dB

f = 870 MHz 22 23 dB

I

tot

total current consumption (DC) VB=24V − 240 mA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

i

T

stg

T

mb

RF input voltage − 75 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C

2002 Jun 27 2

Philips Semiconductors Product specification

870 MHz, 21.5 dB gain push-pull amplifier CGY887

CHARACTERISTICS

Bandwidth 40 to 870 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

G

p

SL slope straight line f = 45 to 870 MHz; note 1 0.6 1.4 dB
FL flatness straight line f = 45 to 100 MHz −±0.3 dB

s

11

s

22

s

21

CTB composite triple beat 79 chs flat; V

X

mod

CSO composite second order

d

2

V

o

power gain f = 45 MHz 21.2 21.8 dB

f = 870 MHz 22 23 dB

f = 100 to 800 MHz −±0.5 dB
f = 800 to 870 MHz −±0.3 dB

input return losses f = 45 to 80 MHz 20 − dB

f = 80 to 160 MHz 20 − dB
f = 160 to 320 MHz 20 − dB
f = 320 to 550 MHz 20 − dB
f = 550 to 650 MHz 19 − dB
f = 650 to 750 MHz 17 − dB
f = 750 to 870 MHz 17 − dB

output return losses f = 45 to 80 MHz 21 − dB

f = 80 to 160 MHz 19 − dB
f = 160 to 320 MHz 17 − dB
f = 320 to 550 MHz 16 − dB
f = 550 to 650 MHz 16 − dB
f = 650 to 750 MHz 16 − dB
f = 750 to 870 MHz 16 − dB

phase response f = 50 MHz −45 +45 deg

= 44 dBmV; fm= 547.25 MHz −−57 dB

o

112 chs flat; V
132 chs flat; V

= 44 dBmV; fm= 745.25 MHz −−55 dB

o

= 42 dBmV; fm= 859.25 MHz −−55 dB

o

cross modulation 79 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−53 dB

= 44 dBmV; fm= 55.25 MHz −−50 dB

o

= 42 dBmV; fm= 55.25 MHz −−52 dB

o

= 44 dBmV; fm= 548.5 MHz −−60 dB

o

112 chs flat; Vo= 44 dBmV; fm= 746.5 MHz −−55 dB

132 chs flat; Vo= 42 dBmV; fm= 860.5 MHz −−55 dB
132 chs flat; Vo= 42 dBmV; fm= 150 MHz −−65 dB

distortion

112 chs flat; V
132 chs flat; V
79 chs flat; V
CSO

sum

CSO
CSO
CSO

112 chs flat; Vo= 44 dBmV; fm= 150 MHz −−65 dB

dif
sum
dif

second order distortion note 2 −−58 dB

note 3 −−57 dB
note 4 −−57 dB

output voltage dim= −60 dB; note 5 64 − dBmV

d

= −60 dB; note 6 63 − dBmV

im

= −60 dB; note 7 62 − dBmV

d

im

2002 Jun 27 3