Philips CGY887 User Manual
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
CGY887
870 MHz, 21.5 dB gain
push-pull amplifier
Product specification
Supersedes data of 2002 June 07
2002 Jun 27
Philips Semiconductors Product specification
870 MHz, 21.5 dB gain push-pull amplifier CGY887
FEATURES
• Superior linearity
• Extremely low noise
• Rugged construction
• Gold metallization ensures excellent reliability
• Excellent gain behaviour over temperature.
APPLICATIONS
• CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Hybrid dynamic range amplifier module in a SOT115J
package operating with a voltage supply of 24 V (DC),
employing both GaAs and Si dies.
QUICK REFERENCE DATA
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
handbook, halfpage
Side view
2
351
Fig.1 Simplified outline.
789
MSA319
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 21.2 21.8 dB
f = 870 MHz 22 23 dB
I
tot
total current consumption (DC) VB=24V − 240 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 75 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2002 Jun 27 2
Philips Semiconductors Product specification
870 MHz, 21.5 dB gain push-pull amplifier CGY887
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
SL slope straight line f = 45 to 870 MHz; note 1 0.6 1.4 dB
FL flatness straight line f = 45 to 100 MHz −±0.3 dB
s
11
s
22
s
21
CTB composite triple beat 79 chs flat; V
X
mod
CSO composite second order
d
2
V
o
power gain f = 45 MHz 21.2 21.8 dB
f = 870 MHz 22 23 dB
f = 100 to 800 MHz −±0.5 dB
f = 800 to 870 MHz −±0.3 dB
input return losses f = 45 to 80 MHz 20 − dB
f = 80 to 160 MHz 20 − dB
f = 160 to 320 MHz 20 − dB
f = 320 to 550 MHz 20 − dB
f = 550 to 650 MHz 19 − dB
f = 650 to 750 MHz 17 − dB
f = 750 to 870 MHz 17 − dB
output return losses f = 45 to 80 MHz 21 − dB
f = 80 to 160 MHz 19 − dB
f = 160 to 320 MHz 17 − dB
f = 320 to 550 MHz 16 − dB
f = 550 to 650 MHz 16 − dB
f = 650 to 750 MHz 16 − dB
f = 750 to 870 MHz 16 − dB
phase response f = 50 MHz −45 +45 deg
= 44 dBmV; fm= 547.25 MHz −−57 dB
o
112 chs flat; V
132 chs flat; V
= 44 dBmV; fm= 745.25 MHz −−55 dB
o
= 42 dBmV; fm= 859.25 MHz −−55 dB
o
cross modulation 79 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−53 dB
= 44 dBmV; fm= 55.25 MHz −−50 dB
o
= 42 dBmV; fm= 55.25 MHz −−52 dB
o
= 44 dBmV; fm= 548.5 MHz −−60 dB
o
112 chs flat; Vo= 44 dBmV; fm= 746.5 MHz −−55 dB
132 chs flat; Vo= 42 dBmV; fm= 860.5 MHz −−55 dB
132 chs flat; Vo= 42 dBmV; fm= 150 MHz −−65 dB
distortion
112 chs flat; V
132 chs flat; V
79 chs flat; V
CSO
sum
CSO
CSO
CSO
112 chs flat; Vo= 44 dBmV; fm= 150 MHz −−65 dB
dif
sum
dif
second order distortion note 2 −−58 dB
note 3 −−57 dB
note 4 −−57 dB
output voltage dim= −60 dB; note 5 64 − dBmV
d
= −60 dB; note 6 63 − dBmV
im
= −60 dB; note 7 62 − dBmV
d
im
2002 Jun 27 3
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