Panasonic UNR8231A, UNR8231 Datasheet

Transistors with built-in Resistor

B

C

R1(1kΩ

)

R2

(

47kΩ

)

E

UN8231/UN8231A

Silicon NPN epitaxial planer transistor

For switching

Features

■

●

High forward current transfer ratio hFE.

●

Resistor built-in type, allowing do wnsizing of the equipment and
reduction of the number of parts.

●

Available in a type with radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to
base voltage

Collector to
emitter voltage

Peak collector current I
Collector current I

UN8231

V

UN8231A 60

CBO

UN8231

V

UN8231A 50

CEO

CP

C

Total power dissipation PT*1 W
Junction temperature T
Storage temperature T

j

stg

* Printed circuit board: Copper foil area of 1cm2 or more and thickness of

1.7mm for the collector portion.

20

V

20

V

1.5 A

0.7 A

150 ˚C

–55 to +150 ˚C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Internal Connection

2.5±0.1

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

2.5±0.1

1 : Emitter
2 : Collector
3 : Base
MT -2 Type Package

Unit: mm

0.5

4.5±0.114.5±0.5

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector cutoff current I
Collector cutoff current I
Emitter cutoff current I

UN8231

Collector to base voltage

UN8231A
UN8231

Collector to emitter voltage

UN8231A

V

V

CBO

CEO

EBO

CBO

CEO

VCB = 15V, IE = 0 1 µA
VCE = 15V, IB = 0 10 µA
VEB = 14V, IC = 0 0.5 mA

20

IC = 10µA, IE = 0

60
20

IC = 1mA, IB = 0

50
Forward current transfer ratio hFE*VCE = 10V, IC = 150mA 800 2100
Collector to emitter saturation voltage V
Input resistance R
Resistance ratio R1/R
Transition frequency f

*IC = 500mA, IB = 5mA 0.4 V

CE(sat)

1

2

T

VCB = 10V, IE = –50mA, f = 200MHz

0.7 1 1.3 kΩ

0.016 0.021 0.025
200 MHz

V

V

*Pulse measurement

1

Transistors with built-in Resistor UN8231/UN8231A

PT — Ta IC — V

1.6

1.4

)
W

(

1.2

T

1.0

0.8

0.6

0.4

Total power dissipation P

0.2

0

0 16040 12080

Ambient temperature Ta (˚C

Copper foil area of 1cm2 or
more and thickness of

1.7mm for the collector
portion.

hFE — I

2400

FE

2000

C

VCE=10V

V

CE(sat)

25˚C

— I

Ta=75˚C

C

IC/IB=100

–25˚C

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

CE

Ta=25˚C

IB=1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

100

)

V

(

30

CE(sat)

10

0.3

0.1

0.03

3

1

Collector to emitter saturation voltage V

0

012210486

)

Collector to emitter voltage VCE (V

Cob — V

30

CB

)

0.01

0.01 0.03

Collector current IC (A

0.1 0.3 1 3 10

)

)
pF

(

25

ob

1600

1200

800

400

Forward current transfer ratio h

0

0.01 0.03

Ta=75˚C

25˚C

–25˚C

0.1 0.3 1 3 10

Collector current IC (A

20

15

10

5

Collector output capacitance C

0

0.1 0.3

)

Collector to base voltage VCB (V

1 3 10 30 100

)

2