Transistors with built-in Resistor
B
C
R1(1kΩ
)
R2
(
47kΩ
)
E
UN7231
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of the low frequency
Features
■
●
High forward current transfer ratio hFE.
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Peak collector current I
CBO
V
CEO
C
CP
Total power dissipation PT* 1.0 W
Junction temperature T
Storage temperature T
j
stg
* Printed circuit board: Copper foil area of 1cm2 or more and thickness of
1.7mm for the collector portion.
20 V
20 V
0.7 A
1.5 A
150 ˚C
–55 to +150 ˚C
4.5±0.1
1.6±0.2
2.6±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
EIAJ : SC–62
Mini-Power Type Package
Marking Symbol: IC
Internal Connection
1.5±0.1
–0.20
+0.25
0.4max.1.0
4.0
–0.2
+0.1
1 : Emitter
2 : Collector
3 : Base
2.5±0.1
0.4±0.04
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector cutoff current
Emitter cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Forward current transfer ratio h
Collector to emitter saturation voltage V
Transition frequency f
Input resistance R
Resistance ratio R1/R
I
I
CBO
CEO
EBO
FE
T
CBO
CEO
CE(sat)
1
2
VCB = 15V, IE = 0 1 µA
VCE = 15V, IB = 0 10 µA
VEB = 14V, IC = 0 0.5 mA
IC = 10µA, IE = 0 20 V
IC = 1mA, IB = 0 20 V
VCE = 10V, IC = 150mA* 800 2100
IC = 500mA, IB = 5mA* 0.4 V
VCB = 20V, IE = –20mA, f = 200MHz
55 MHz
0.7 1 1.3 kΩ
0.016 0.021 0.025
*Pulse measurement
1
Transistors with built-in Resistor
UN7231
PT — Ta IC — V
1.6
1.4
)
W
(
1.2
T
1.0
0.8
0.6
0.4
Total power dissipation P
0.2
0
0 16040 12080
Ambient temperature Ta (˚C
Copper foil area of 1cm2 or
more and thickness of
1.7mm for the collector
portion.
hFE — I
2400
FE
2000
C
VCE=10V
V
CE(sat)
25˚C
— I
Ta=75˚C
C
IC/IB=100
–25˚C
1.2
1.0
)
A
(
0.8
C
0.6
0.4
Collector current I
0.2
CE
Ta=25˚C
IB=1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
100
)
V
(
30
CE(sat)
10
0.3
0.1
0.03
3
1
Collector to emitter saturation voltage V
0
012210486
)
Collector to emitter voltage VCE (V
Cob — V
30
CB
)
0.01
0.01 0.03
0.1 0.3 1 3 10
Collector current IC (A
)
)
pF
(
25
ob
1600
1200
800
400
Forward current transfer ratio h
0
0.01 0.03
Ta=75˚C
25˚C
–25˚C
0.1 0.3 1 3 10
Collector current IC (A
20
15
10
5
Collector output capacitance C
0
0.1 0.3
)
Collector to base voltage VCB (V
1 3 10 30 100
)
2