Panasonic UNR1231A, UNR1231 Datasheet

Transistors with built-in Resistor

B

C

R1(1kΩ

)

R2

(

47kΩ

)

E

UN1231/1231A

Silicon NPN epitaxial planer transistor

For amplification of the low frequency

Features

■

●

High forward current transfer ratio hFE.

●

M type mold package.

●

Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.

6.9±0.1

1.5

0.4

1.0±0.1

1.5 R0.9

R0.9

R0.7

0.85

0.55±0.1 0.45±0.05

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

Unit: mm

2.5±0.1

1.0

1.0

4.1±0.2 4.5±0.1

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to
base voltage

Collector to
emitter voltage

UN1231
UN1231A 60
UN1231

UN1231A 50
Collector current I
Peak collector current I

V

CBO

V

CEO

C

CP

20

V

20

V

0.7 A

1.5 A
Total power dissipation PT* 1.0 W
Junction temperature T
Storage temperature T

j

stg

150 ˚C

–55 to +150 ˚C

* Printed circuit board: Copper foil area of 1cm2 or more and thickness of

1.7mm for the collector portion.

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector cutoff current

Emitter cutoff current I

I
I

CBO

CEO

EBO

VCB = 15V, IE = 0 1 µA
VCE = 15V, IB = 0 10 µA
VEB = 14V, IC = 0 0.5 mA

UN1231

Collector to base voltage

UN1231A

V

CBO

IC = 10µA, IE = 0

UN1231

Collector to emitter voltage

UN1231A
Forward current transfer ratio h
Collector to emitter saturation voltage V
Input resistance R
Resistance ratio R1/R

V

FE

CEO

CE(sat)

1

2

IC = 1mA, IB = 0

VCE = 10V, IC = 150mA* 800 2100
IC = 100mA, IB = 5mA* 0.4 V

2.5 2.5

Internal Connection

20
60
20
50

0.7 1 1.3 kΩ

0.021

123

1:Base
2:Collector
3:Emitter
M Type Mold Package

V

V

*Pulse measurement

1

Transistors with built-in Resistor

UN1231/1231A

PT — Ta IC — V

1.6

1.4

)
W

(

1.2

T

1.0

0.8

0.6

0.4

Total power dissipation P

0.2

0

0 16040 12080

Ambient temperature Ta (˚C

Copper foil area of 1cm2 or
more and thickness of

1.7mm for the collector
portion.

hFE — I

2400

FE

2000

C

VCE=10V

V

CE(sat)

— I

25˚C

C

IC/IB=100

Ta=75˚C

–25˚C

1.2

1.0

)

A

(

0.8

C

0.6

0.4

Collector current I

0.2

CE

IB=1.2mA

Ta=25˚C

1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

100

)

V

(

30

CE(sat)

10

0.3

0.1

0.03

3

1

Collector to emitter saturation voltage V

0

012210486

)

Collector to emitter voltage VCE (V

Cob — V

30

CB

)

0.01

0.01 0.03

Collector current IC (A

0.1 0.3 1 3 10

)

)
pF

(

25

ob

1600

1200

800

400

Forward current transfer ratio h

0

0.01 0.03

Ta=75˚C

25˚C

–25˚C

0.1 0.3 1 3 10

Collector current IC (A

20

15

10

5

Collector output capacitance C

0

0.1 0.3

)

Collector to base voltage VCB (V

1 3 10 30 100

)

2