Panasonic UNR1224, UNR1223, UNR1222, UNR1221 Datasheet
Transistors with built-in Resistor
B
C
R1
R2
E
UN1221/1222/1223/1224
Silicon NPN epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Resistance by Part Number
■
(R1)(R
●
UN1221 2.2kΩ 2.2kΩ
●
UN1222 4.7kΩ 4.7kΩ
●
UN1223 10kΩ 10kΩ
●
UN1224 2.2kΩ 10kΩ
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
)
2
50 V
50 V
500 mA
600 mW
150 ˚C
–55 to +150 ˚C
6.9±0.1
1.5
0.4
1.0±0.1
1.5 R0.9
R0.9
R0.7
0.85
0.55±0.1 0.45±0.05
2.5 2.5
Internal Connection
2.5±0.1
1.0
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
1:Base
2:Collector
3:Emitter
M Type Mold Package
Unit: mm
1.0
4.1±0.2 4.5±0.1
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector cutoff current
Emitter
cutoff
current
UN1221 5
UN1222 I
UN1223/1224 1
Collector to base voltage V
Collector to emitter voltage V
Forward
current
transfer
ratio
UN1221 40
UN1222 h
UN1223/1224 60
Collector to emitter saturation voltage V
Output voltage high level V
Output voltage low level V
Transition frequency f
Input
resistance
UN1221/1224 2.2
UN1222 R
UN1223 10
Resistance ratio
UN1224 0.22
I
CBO
I
CEO
EBO
CBO
CEO
FE
CE(sat)
OH
OL
T
1
R1/R
VCB = 50V, IE = 0 1 µA
VCE = 50V, IB = 0 1 µA
VEB = 6V, IC = 0 2 mA
IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCE = 10V, IC = 100mA 50
IC = 100mA, IB = 5mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 500Ω 4.9 V
VCC = 5V, VB = 3.5V, RL = 500Ω 0.2 V
VCB = 10V, IE = –50mA, f = 200MHz
200 MHz
(–30%) 4.7 (+30%) kΩ
0.8 1.0 1.2
2
1
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
800
)
700
mW
(
600
T
500
400
300
200
100
Total power dissipation P
0
0 16020 14060 10040 12080
Ambient temperature Ta (˚C
Characteristics charts of UN1221
)
UN1221/1222/1223/1224
— V
I
C
300
IB=1.0mA
250
)
mA
(
200
C
150
100
Collector current I
50
0
012210486
Collector to emitter voltage VCE (V
Cob — V
24
)
pF
(
20
ob
16
CE
CB
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
13
)
Collector current IC (mA
25˚C
–25˚C
10 30 100 300 1000
IO — V
10000
3000
)
1000
µA
(
O
300
IN
C
Ta=75˚C
VO=5V
Ta=25˚C
IC/IB=10
)
400
FE
300
200
100
Forward current transfer ratio h
0
13
100
30
)
10
V
(
IN
3
hFE — I
–25˚C
10 30 100 300 1000
C
VCE=10V
Ta=75˚C
25˚C
Collector current IC (mA
VIN — I
O
VO=0.2V
Ta=25˚C
)
12
8
4
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
2
100
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
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