Panasonic UNR112Y, UNR112X, UNR1124, UNR1123, UNR1122 Datasheet
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Transistors with built-in Resistor
B
C
R1
R2
E
UN1121/1122/1123/1124/112X/112Y
Silicon PNP epitaxial planer transistor
For digital circuits
Features
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●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Resistance by Part Number
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(R1)(R
●
UN1121 2.2kΩ 2.2kΩ
●
UN1122 4.7kΩ 4.7kΩ
●
UN1123 10kΩ 10kΩ
●
UN1124 2.2kΩ 10kΩ
●
UN112X 0.27kΩ 5kΩ
●
UN112Y 3.1kΩ 4.6kΩ
)
2
0.4
1.0±0.1
6.9±0.1
1.5
1.5 R0.9
R0.9
R0.7
0.85
0.55±0.1 0.45±0.05
123
2.5 2.5
2.5±0.1
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
1:Base
2:Collector
3:Emitter
M Type Mold Package
1.0
Unit: mm
1.0
4.1±0.2 4.5±0.1
Absolute Maximum Ratings (Ta=25˚C)
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Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
Internal Connection
–50 V
–50 V
–500 mA
600 mW
150 ˚C
–55 to +150 ˚C
1
Transistors with built-in Resistor UN1121/1122/1123/1124/112X/112Y
Electrical Characteristics (Ta=25˚C)
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Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
UN112X I
Collector cutoff current I
UN112X I
Emitter
cutoff
current
UN1121 –5
UN1122/112X/112Y I
UN1123/1124 –1
Collector to base voltage V
Forward
current
transfer
ratio
UN1121 40
UN1122/112Y
UN1123/1124 60
UN112X 20
Collector to emitter saturation voltage V
UN112X V
UN112Y V
Output voltage high level V
Output voltage low level V
Transition frequency f
h
CBO
CBO
CEO
CEO
EBO
FE
T
CBO
CE(sat)
CE(sat)
CE(sat)
OH
OL
UN1121 2.2
Input
resistance
UN1122 4.7
UN1123 R
1
UN112X 0.27
UN112Y 3.1
Resistance ratio 0.8 1.0 1.2
UN1124
R1/R
UN112X 0.054
UN112Y 0.67
VCB = –50V, IE = 0 –1
VCB = –50V, IE = 0 – 0.1
VCE = –50V, IB = 0 –1
VCE = –50V, IB = 0 – 0.5
VEB = –6V, IC = 0 –2 mA
IC = –10µA, IE = 0 –50 V
50
VCE = –10V, IC = –100mA
IC = –100mA, IB = –5mA – 0.25
IC = –10mA, IB = – 0.3mA – 0.25 V
IC = –50mA, IB = –5mA – 0.15
VCC = –5V, VB = – 0.5V, RL = 500Ω –4.9 V
VCC = –5V, VB = –3.5V, RL = 500Ω – 0.2 V
VCB = –10V, IE = 50mA, f = 200MHz
200 MHz
(–30%) 10 (+30%) kΩ
0.22
2
µA
µA
Common characteristics chart
— Ta
P
T
800
)
mW
(
600
T
400
200
Total power dissipation P
0
0 16040 12080
Ambient temperature Ta (˚C
2
)
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