Panasonic UNR112Y, UNR112X, UNR1124, UNR1123, UNR1122 Datasheet

...
Transistors with built-in Resistor
B
C
R1
R2
E
UN1121/1122/1123/1124/112X/112Y
Silicon PNP epitaxial planer transistor
For digital circuits
Features
M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
Resistance by Part Number
(R1)(R
UN1121 2.2k 2.2k
UN1122 4.7k 4.7k
UN1123 10k 10k
UN1124 2.2k 10k
UN112X 0.27k 5k
UN112Y 3.1k 4.6k
)
2
0.4
1.0±0.1
6.9±0.1
1.5
1.5 R0.9
R0.9
R0.7
0.85
0.55±0.1 0.45±0.05
123
2.5 2.5
2.5±0.1
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
1:Base 2:Collector 3:Emitter M Type Mold Package
1.0
Unit: mm
1.0
4.1±0.2 4.5±0.1
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage Collector current I Total power dissipation P Junction temperature T Storage temperature T
CBO
V
CEO
C
T
j
stg
Internal Connection
–50 V –50 V
–500 mA
600 mW 150 ˚C
–55 to +150 ˚C
1
Transistors with built-in Resistor UN1121/1122/1123/1124/112X/112Y
Electrical Characteristics (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
UN112X I
Collector cutoff current I
UN112X I
Emitter cutoff current
UN1121 –5 UN1122/112X/112Y I UN1123/1124 –1
Collector to base voltage V
Forward current transfer ratio
UN1121 40 UN1122/112Y UN1123/1124 60 UN112X 20
Collector to emitter saturation voltage V
UN112X V
UN112Y V Output voltage high level V Output voltage low level V Transition frequency f
h
CBO
CBO
CEO
CEO
EBO
FE
T
CBO
CE(sat)
CE(sat)
CE(sat)
OH
OL
UN1121 2.2
Input resis­tance
UN1122 4.7 UN1123 R
1
UN112X 0.27 UN112Y 3.1
Resistance ratio 0.8 1.0 1.2
UN1124
R1/R
UN112X 0.054
UN112Y 0.67
VCB = –50V, IE = 0 –1 VCB = –50V, IE = 0 – 0.1 VCE = –50V, IB = 0 –1 VCE = –50V, IB = 0 – 0.5
VEB = –6V, IC = 0 –2 mA
IC = –10µA, IE = 0 –50 V
50
VCE = –10V, IC = –100mA
IC = –100mA, IB = –5mA – 0.25 IC = –10mA, IB = – 0.3mA – 0.25 V IC = –50mA, IB = –5mA – 0.15 VCC = –5V, VB = – 0.5V, RL = 500 –4.9 V VCC = –5V, VB = –3.5V, RL = 500 – 0.2 V VCB = –10V, IE = 50mA, f = 200MHz
200 MHz
(–30%) 10 (+30%) k
0.22
2
µA
µA
Common characteristics chart
— Ta
P
T
800
) mW
(
600
T
400
200
Total power dissipation P
0
0 16040 12080
Ambient temperature Ta (˚C
2
)
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