Panasonic UNR111F, UNR111E, UNR111D, UNR1119, UNR1118 Datasheet
...
Transistors with built-in Resistor
B
C
R1
R2
E
UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/
111D/111E/111F/111H/111L
Silicon PNP epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Resistance by Part Number
■
(R1)(R
●
UN1111 10kΩ 10kΩ
●
UN1112 22kΩ 22kΩ
●
UN1113 47kΩ 47kΩ
●
UN1114 10kΩ 47kΩ
●
UN1115 10kΩ —
●
UN1116 4.7kΩ —
●
UN1117 22kΩ —
●
UN1118 0.51kΩ 5.1kΩ
●
UN1119 1kΩ 10kΩ
●
UN1110 47kΩ —
●
UN111D 47kΩ 10kΩ
●
UN111E 47kΩ 22kΩ
●
UN111F 4.7kΩ 10kΩ
●
UN111H 2.2kΩ 10kΩ
●
UN111L 4.7kΩ 4.7kΩ
)
2
6.9±0.1
1.5
1.5 R0.9
0.4
R0.9
R0.7
1.0±0.1
0.85
0.55±0.1 0.45±0.05
2.5 2.5
Internal Connection
2.5±0.1
1.0
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
1:Base
2:Collector
3:Emitter
M Type Mold Package
Unit: mm
1.0
4.1±0.2 4.5±0.1
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
–50 V
–50 V
–100 mA
400 mW
150 ˚C
–55 to +150 ˚C
1
UN1111/1112/1113/1114/1115/1116/1117/1118/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
I
CBO
CEO
UN1111 – 0.5
UN1112/1114/111E/111D – 0.2
UN1113 – 0.1
Emitter
cutoff
current
UN1115/1116/1117/1110 I
EBO
UN111F/111H –1.0
UN1119 –1.5
UN1118/111L –2.0
Collector to base voltage V
Collector to emitter voltage V
CBO
CEO
UN1111 35
Forward
current
transfer
ratio
UN1112/111E 60
UN1113/1114
UN1115*/1116*/1117*/1110*
h
FE
UN111F/111D/1119/111H 30
UN1118/111L 20
Collector to emitter saturation voltage V
Output voltage high level V
CE(sat)IC
OH
Output voltage low level VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2
UN1113
UN111D VCC = –5V, VB = –10V, RL = 1kΩ – 0.2
V
OL
UN111E VCC = –5V, VB = –6V, RL = 1kΩ – 0.2
Transition frequency f
T
UN1111/1114/1115 10
UN1112/1117 22
Input
resistance
UN1113/1110/111D/111E 47
UN1116/111F/111L R
1
UN1118 0.51
UN1119 1
UN111H 2.2
UN1111/1112/1113/111L 0.8 1.0 1.2
UN1114 0.17 0.21 0.25
Resis-
tance
ratio
UN1118/1119 0.08 0.1 0.12
UN111D R1/R
UN111E 2.14
UN111F 0.47
UN111H 0.17 0.22 0.27
VCB = –50V, IE = 0 – 0.1 µA
VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 – 0.01 mA
IC = –10µA, IE = 0 50 V
IC = –2mA, IB = 0 50 V
VCE = –10V, IC = –5mA
= –10mA, IB = – 0.3mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –3.5V, RL = 1kΩ – 0.2
VCB = –10V, IE = 2mA, f = 200MHz 80 MHz
2
1119/1110/111D/111E/111F/111H/111L
80
160 460
(–30%) 4.7 (+30%) kΩ
4.7
V
* hFE rank classification (UN1115/1116/1117/1110)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
Characteristics charts of UN1111
)
UN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CE
IB=–1.0mA
CB
–0.9mA
f=1MHz
I
E
Ta=25˚C
Ta=25˚C
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
C
IC/IB=10
Ta=75˚C
160
VCE=–10V
FE
120
80
40
Forward current transfer ratio h
0
–1 –3
)
IN
)
V
(
IN
–100
–30
–10
–3
–1
VO=–5V
Ta=25˚C
hFE — I
C
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V
Ta=25˚C
)
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
–30
–10
Output current I
–
3
–1
–0.4
)
Input voltage VIN (V
–1.4–1.2–1.0–0.8–0.6
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
Output current IO (mA
–1 –3 –10 –30 –100
)
3
Transistors with built-in Resistor
Characteristics charts of UN1112
UN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CE
IB=–1.0mA
–0.9mA
CB
–0.8mA
f=1MHz
I
E
Ta=25˚C
Ta=25˚C
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
–25˚C
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
)
IN
)
V
(
IN
–100
–30
–10
–3
–1
VO=–5V
Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V
Ta=25˚C
)
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN1113
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
Ta=25˚C
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–30
–10
–3
–1
–0.3
–0.1
–0.1 –0.3
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
— I
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
VCE=–10V
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
Ta=75˚C
25˚C
–25˚C
)
4
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