Panasonic UNR1110, UNR1111, UNR1112, UNR1113, UNR1114 Technical data
...
查询UNR1110供应商
Transistors with built-in Resistor
UNR111x Series (UN111x Series)
Silicon PNP epitaxial planar transistor
For digital circuits
■ Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Resistance by Part Number
(R1)(R
• UNR1110 (UN1110) 47 kΩ
• UNR1111 (UN1111) 10 kΩ 10 kΩ
• UNR1112 (UN1112) 22 kΩ 22 kΩ
• UNR1113 (UN1113) 47 kΩ 47 kΩ
• UNR1114 (UN1114) 10 kΩ 47 kΩ
• UNR1115 (UN1115) 10 kΩ
• UNR1116 (UN1116) 4.7 kΩ
• UNR1117 (UN1117) 22 kΩ
• UNR1118 (UN1118) 0.51 kΩ 5.1 kΩ
• UNR1119 (UN1119) 1 kΩ 10 kΩ
• UNR111D (UN111D) 47 kΩ 10 kΩ
• UNR111E (UN111E) 47 kΩ 22 kΩ
• UNR111F (UN111F) 4.7 kΩ 10 kΩ
• UNR111H (UN111H) 2.2 kΩ 10 kΩ
• UNR111L (UN111L) 4.7 kΩ 4.7 kΩ
)
2
(0.4)
R 0.7
±0.1
1.0
Internal Connection
(1.5)
6.9
(1.5)
(0.85)
0.55
B
±0.1
±0.1
R 0.9
213
(2.5)(2.5)
R
R
Unit: mm
2.5
±0.1
(1.0)
(1.0)
±0.1
3.5
±0.2
2.0
±0.2
2.4
±0.05
1.25
M-A1 Package
1
2
C
0.45
±0.05
1: Base
2: Collector
3: Emitter
±0.1
4.5
±0.2
4.1
E
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Collector current I
Total power dissipation
Junction temperature T
Storage temperature T
Publication date: October 2003 SJH00001BED
CBO
CEO
P
C
T
j
stg
−50 V
−50 V
−100 mA
400 mW
150 °C
−55 to +150 °C
Note) The part numbers in the parenthesis show conventional part number.
1
UNR111x Series
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR1111 I
cutoff current
(Collector open)
UNR1112/1114/111D/111E
UNR1113 − 0.1
CBOIC
CEOIC
I
CBO
I
CEO
EBO
UNR1110/1115/1116/1117
UNR111F/111H −1.0
UNR1119 −1.5
UNR1118/111L −2.0
Forward current
UNR1111 h
FE
transfer ratio UNR1112/111E 60
UNR1113/1114 80
UNR1110 */1115 */1116 */
*
1117
UNR1118/111L 20
UNR1119/111D/111F/111H
Collector-emitter saturation voltage V
Output voltage high-level V
Output voltage low-level V
CE(sat)IC
OH
OL
UNR1113 VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
UNR111D VCC = −5 V, VB = −10 V, RL = 1 kΩ
UNR111E VCC = −5 V, VB = −6 V, RL = 1 kΩ
Transition frequency f
Input resistance
UNR1111/1114/1115 R
UNR1112/1117 22
UNR1110/1113/111D/111E
UNR1116/111F/111L 4.7
UNR1118 0.51
UNR1119 1
UNR111H 2.2
Resistance ratio
UNR1111/1112/1113/111L
R1/R
UNR1114 0.17 0.21 0.25
UNR1118/1119 0.08 0.1 0.12
UNR111D 4.7
UNR111E 2.14
UNR111F 0.47
UNR111H 0.17 0.22 0.27
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification (UNR1110/1115/1116/1117)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
= −10 µA, IE = 0 −50 V
= −2 mA, IB = 0 −50 V
VCB = −50 V, IE = 0 − 0.1 µA
VCE = −50 V, IB = 0 − 0.5 µA
VEB = −6 V, IC = 0 − 0.5 mA
VCE = −10 V, IC = −5 mA 35
160 460
30
= −10 mA, IB = − 0.3 mA − 0.25 V
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ−4.9 V
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ− 0.2 V
VCB = −10 V, IE = 2 mA, f = 200 MHz 80 MHz
T
1
−30% 10 +30% kΩ
47
2
0.8 1.0 1.2
− 0.2
− 0.01
2
SJH00001BED
Common characteristics chart
PT T
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (°C
a
)
Characteristics charts of UNR1110
IC V
− 0.7 mA
− 0.6 mA
CE
Ta = 25°C
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
)
−120
= −1.0 mA
I
B
− 0.9 mA
−100
− 0.8 mA
)
mA
(
−80
C
−60
−40
Collector current I
−20
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
V
I
−100
)
V
(
CE(sat)
−10
−1
−
0.1
Collector-emitter saturation voltage V
− 0.01
−0.1
CE(sat)
25°C
−25°C
−1 −10 −100
C
I
C
Ta = 75°C
/ I
Collector current IC (mA
UNR111x Series
hFE I
= 10
B
400
FE
300
200
100
Forward current transfer ratio h
0
−1
)
−10 −100
Collector current IC (mA
C
V
CE
Ta = 75°C
25°C
−25°C
= –10 V
−1 000
)
Cob V
6
(pF)
ob
5
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −100
CB
f = 1 MHz
I
E
Ta = 25°C
Collector-base voltage VCB (V)
IO V
4
−10
= 0
3
−10
)
µA
(
O
2
−10
Output current I
−10
−1
− 0.4
Input voltage VIN (V
IN
= −5 V
V
O
Ta = 25°C
)
−100
−10
)
V
(
IN
−1
Input voltage V
0.1
−
− 0.01
0.1
−1.4−1.2−1.0− 0.8− 0.6
−
SJH00001BED
VIN I
O
V
O
T
= 25°C
a
−1 −10 −100
Output current IO (mA
= − 0.2 V
)
3
UNR111x Series
0
Characteristics charts of UNR1111
IC V
−160
= −1.0 mA
I
B
)
−120
mA
(
C
−80
−40
Collector current I
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
Cob V
6
(pF)
ob
5
C
4
3
CE
− 0.9 mA
CB
Ta = 25°C
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
f = 1 MHz
= 0
I
E
T
= 25°C
a
V
I
−100
)
V
(
CE(sat)
−10
−1
0.1
−
Collector-emitter saturation voltage V
− 0.01
− 0.1
)
CE(sat)
25°C
−25°C
−1 −10 −100
Collector current IC (mA
IO V
4
−10
3
−10
)
µA
(
O
2
−10
IN
C
/ I
I
C
B
Ta = 75°C
VO = −5 V
= 25°C
T
a
)
= 10
160
V
FE
120
80
40
Forward current transfer ratio h
0
−1
−100
−10
)
V
(
IN
−1
hFE I
C
= −10 V
CE
−10 −100
Collector current IC (mA
VIN I
O
Ta = 75°C
25°C
−25°C
= −
V
O
Ta = 25°C
)
0.2 V
−1 000
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −10
Collector-base voltage VCB (V)
Characteristics charts of UNR1112
IC V
IB = −1.0 mA
CE
− 0.9 mA
− 0.8 mA
Ta = 25°C
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
)
−160
)
−120
mA
(
C
−80
−40
Collector current I
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
Output current I
−10
−1
0.4
−
I
)
C
I
/ I
C
Ta = 75°C
Input voltage VIN (V
V
−100
)
V
(
CE(sat)
−10
−1
−
0.1
Collector-emitter saturation voltage V
− 0.01
− 0.1
CE(sat)
25°C
−25°C
−1 −10 −100
Collector current IC (mA
Input voltage V
−
0.1
− 0.01
0.1
−1.4−1.2−1.0− 0.8− 0.6
= 10
B
−
400
FE
300
200
100
−1 −10 −100
Output current IO (mA
hFE I
C
V
CE
Ta = 75°C
25°C
−25°C
)
= −10 V
Forward current transfer ratio h
0
−1
)
−10 −100 −1 000
Collector current IC (mA
)
4
SJH00001BED
UNR111x Series
Cob V
6
(pF)
ob
5
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −100
CB
f = 1 MHz
= 0
I
E
T
= 25°C
a
Collector-base voltage VCB (V)
Characteristics charts of UNR1113
IC V
−160
)
−120
mA
(
C
−80
−40
Collector current I
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
= −1.0 mA
I
B
CE
− 0.9 mA
− 0.8 mA
Ta = 25°C
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
)
IO V
4
−10
3
−10
)
µA
(
O
2
−10
Output current I
−10
−1
0.4
−
Input voltage VIN (V
V
−100
)
V
(
CE(sat)
−10
−1
−
0.1
−25°C
Collector-emitter saturation voltage V
− 0.01
− 0.1
IN
V
O
T
= 25°C
a
)
I
CE(sat)
25°C
−1 −10 −100
C
/ I
I
C
Ta = 75°C
Collector current IC (mA
= −5 V
= 10
B
)
VIN I
hFE I
O
V
Ta = 25°C
C
V
= −
0.2 V
O
)
= −10 V
CE
Ta = 75°C
25°C
−25°C
−100
−10
)
V
(
IN
−1
Input voltage V
0.1
−
−1.4−1.2−1.0− 0.8− 0.6
− 0.01
0.1
−
−1 −10 −100
Output current IO (mA
400
FE
300
200
100
Forward current transfer ratio h
0
−1
−10 −100
Collector current IC (mA
−1 000
)
6
Cob V
(pF)
ob
5
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −100
CB
f = 1 MHz
I
E
T
Collector-base voltage VCB (V)
= 0
= 25°C
a
4
−10
3
−10
)
µA
(
O
2
−10
Output current I
−10
−1
−
0.4
Input voltage VIN (V
SJH00001BED
IO V
IN
V
O
T
a
= −5 V
= 25°C
−1.4−1.2−1.0− 0.8− 0.6
−100
−10
)
V
(
IN
−1
Input voltage V
−
0.1
− 0.01
0.1
−
)
VIN I
O
V
O
Ta = 25°C
−1 −10 −100
Output current IO (mA
= − 0.2 V
)
5
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