Panasonic UNA0225 Datasheet

Small Signal Transistor Arrays

1
2

4

3

5

7
8

6

16
15
14
13
12
11
10

9

UN225

Transistor array to drive the small motor

Features

■

●

Small and lightweight

●

Low power consumption (low V

●

Low-voltage drive

●

With 8 elements incorporated (SO–16)

transistor used)

CE(sat)

Unit: mm

7.7±0.3

5.5±0.3

1

1.5±0.1

0.8

16

Applications

■

●

Video cameras

●

Cameras

●

Portable CD players

●

Small motor drive circuits in general for electronic equipment.

Absolute Maximum Ratings (Ta=25±2˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage

V
Emitter to base voltage V
Collector current I

CBO

CEO

EBO

C

±10 V
±10 V

±7V

±0.5 A

Total power dissipation PT* 0.5 W
Junction temperature T
Storage temperature T

j

stg

150 ˚C

–55 to +150 ˚C

Note: ± marks used above: +: NPN part, –: PNP part
* TC = 25˚C only when the elements are active

6.5±0.3
16-0.3±0.1

8

0.5

0 to 0.1

45˚

0.5±0.2

Internal Connection

9

12˚

14-0.75±0.1

12˚

–0.05

+0.1

0.2

6˚

SO–16 Package

6˚

1

Small Signal Transistor Arrays

Electrical Characteristics (Ta=25±2˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector cutoff current I

Collector to base voltage V

Collector to emitter voltage V

Emitter to base voltage V

Forward current transfer ratio h

Collector to emitter saturation voltage

Transition frequency f

Collector output capacitance C

Forward voltage (DC) V

CBO

CBO

CEO

EBO

FE

V

CE(sat)1

T

ob

F

(NPN) VCB = 7V 1
(PNP) VCB = –7V –1
(NPN) IC = 10µA10
(PNP) IC = –10µA –10
(NPN) IC = 1mA 10
(PNP) IC = –1mA –10
(NPN) IE = 10µA7
(PNP) IE = –10µA–7
(NPN) VCE = 2V, IC = 0.2A* 200 800
(PNP) VCE = –2V, IC = – 0.2A* 200 800
(NPN) IC = 0.2A, IB = 2mA 0.2
(PNP) IC = – 0.2A, IB = –2mA – 0.2
(NPN) VCB = 6V, IE = –50mA, f = 200MHz
(PNP) VCB = –6V, IE = 50mA, f = 200MHz

120

120
(NPN) VCB = 6V, IE = 0, f = 1MHz 25
(PNP) VCB = –6V, IE = 0, f = 1MHz 35
(NPN) IF = 0.5A 1.3
(PNP) IF = – 0.5A –1.3

UN225

µA

V

V

V

V

MHz

pF

V

*Pulse measurement

Characteristics charts of PNP transistor block

— Ta IC — V

P

T

0.6

)

0.5

W

(

T

0.4

0.3

0.2

0.1

Total power dissipation P

–1.2

–1.0

)
A

(

C

Collector current I

IB=–6mA

–0.8

–0.6

–0.4

–0.2

–5mA

CE

Ta=25˚C

–4mA

–3mA

–2mA

–1mA

IC — V

–1.2

–1.0

)
A

(

–0.8

C

–0.6

–0.4

Collector current I

–0.2

Ta=75˚C –25˚C

BE

VCE=–2V

25˚C

0

0 16020 60 100 14040 12080

Ambient temperature Ta (˚C

2

0

0 –12–2 –10–4 –8–6

)

Collector to emitter voltage VCE (V

)

0

0–2.4–0.4 –2.0–0.8 –1.6–1.2

Base to emitter voltage VBE (V

)