ON Semiconductor NTMD6N03R2 Technical data
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NTMD6N03R2
Power MOSFET
30 V, 6 A, Dual N−Channel SO−8
Features
• Designed for use in low voltage, high speed switching applications
• Ultra Low On−Resistance Provides
Higher Efficiency and Extends Battery Life
− R
− R
• Miniature SO−8 Surface Mount Package Saves Board Space
• Diode is Characterized for Use in Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
Applications
• Dc−Dc Converters
• Computers
• Printers
• Cellular and Cordless Phones
• Disk Drives and Tape Drives
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage − Continuous V
Drain Current
− Continuous @ T
− Single Pulse (tp ≤ 10 s)
Total Power Dissipation
@ T
@ T
Operating and Storage Temperature
Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
DD
V
DS
L = 10 mH, R
Thermal Resistance
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s
2. When surface mounted to an FR4 board using 1″ pad size, t = steady state
= 0.024 , VGS = 10 V (Typ)
DS(on)
= 0.030 , VGS = 4.5 V (Typ)
DS(on)
= 25°C unless otherwise noted)
J
Rating
= 25°C
A
= 25°C (Note 1)
A
= 25°C (Note 2)
A
= 25°C
= 25 Ω)
G
J
= 30 Vdc, VGS = 5.0 Vdc,
= 20 Vdc, Peak IL = 9.0 Apk,
Symbol Value Unit
DSS
I
I
DM
P
TJ, T
E
R
T
GS
D
AS
D
stg
JA
L
30 Volts
20 Volts
6.0
30
2.0
1.29
−55 to
+150
325 mJ
62.5
97
260 °C
Adc
Apk
Watts
°C
°C/W
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V
DSS
30 V 24 mΩ @ VGS = 10 V 6.0 A
G
D
R
DS(ON)
N−Channel
S
TYP ID MAX
D
G
S
MARKING
8
1
SO−8, DUAL
CASE 751
STYLE 11
DIAGRAM
8
E6N03
LYWW
1
PIN ASSIGNMENTS
Source−1
Gate−1
Source−2
Gate−2
1
2
3
4
(Top View)
E6N03 = Device Code
L = Assembly Location
Y = Year
WW = Work Week
8
7
6
5
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device Package Shipping
NTMD6N03R2 SO−8 2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
†
Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 1
1 Publication Order Number:
NTMD6N03R2/D
NTMD6N03R2
)
f
MHz)
R
G
Ω)
R
G
Ω)
I
D
A)
)
dIS/dt
100 A/µs)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
= 0 Vdc, ID = 250 µA)
(V
GS
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
= 24 Vdc, VGS = 0 Vdc, TJ = 25°C)
DS
= 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
(V
DS
Gate−Body Leakage Current
= ±20 Vdc, VDS = 0 Vdc)
(V
GS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
= VGS, ID = 250 µAdc)
(V
DS
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
(V
= 10 Vdc, ID = 6 Adc)
GS
= 4.5 Vdc, ID = 3.9 Adc)
(V
GS
Forward Transconductance
(V
= 15 Vdc, ID = 5.0 Adc)
DS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz
= 1.0
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 15 Vdc, ID = 1 A,
VGS = 10 V,
= 6 Ω)
R
6
G
Fall Time
Turn−On Delay Time t
Rise Time
Turn−Off Delay Time
(VDD = 15 Vdc, ID = 1 A,
VGS = 4.5 V,
= 6 Ω)
6
R
G
Fall Time
Gate Charge Q
(VDS = 15 Vdc,
VGS = 10 Vdc,
= 5 A)
5
I
D
BODY−DRAIN DIODE RATINGS (Note 3)
Diode Forward On−Voltage
(IS = 1.7 Adc, VGS = 0 V)
(I
= 1.7 Adc, VGS = 0 V, TJ = 150°C)
S
Reverse Recovery Time
(IS = 5 A, VGS = 0 V,
/dt = 100 A/µs
=
dI
Reverse Recovery Stored Charge
(I
= 5 A, dIS/dt = 100 A/s, VGS = 0 V)
S
3. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
d(on)
t
d(off)
Q
Q
Q
V
t
t
t
Q
FS
iss
oss
rss
t
t
t
t
SD
rr
a
b
RR
30
−
30
−
−
mV/°C
−
µAdc
Vdc
−
−
−
−
1.0
20
nAdc
− − 100
Vdc
1.0
−
1.8
4.6
2.5
mV/°C
−
Ω
−
−
0.024
0.030
0.032
0.040
Mhos
− 10 −
− 680 950 pF
− 210 300
− 70 135
− 9 18
r
− 22 40
ns
− 45 80
f
r
− 45 80
− 13 30
− 27 50
ns
− 22 40
f
T
1
2
3
− 34 70
− 19 30
− 2.4 −
− 5.0 −
− 4.3 −
−
−
0.75
0.62
1.0
− 26 −
nC
Vdc
−
ns
− 11 −
− 15 −
− 0.015 − µC
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NTMD6N03R2
TYPICAL MOSFET ELECTRICAL CHARACTERISTICS
12
10 V
6 V
10
4 V
8
6
4
, DRAIN CURRENT (AMPS)
2
D
I
0
0
0.40.2
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
3.4 V
3.6 V
3.8 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.05
0.045
0.035
VGS = 10
0.04
0.03
TJ = 25°C
VGS = 2.6 V
0.80.6 1.6
1 1.2 1.4 1.8
T = 125°C
3.2 V
3 V
2.8 V
12
VDS ≥ 10 V
10
8
6
TJ = 25°C
4
, DRAIN CURRENT (AMPS)
2
D
I
2
0
04215
V
GS
0.05
0.045
0.035
TJ = 25°C
0.04
0.03
TJ = 125°C
TJ = −55°C
3
, GATE−TO−SOURCE VOLTAGE (VOLTS)
VGS = 4.5 V
0.025
0.02
0.015
, DRAIN−TO−SOURCE RESISTANCE (Ω)
0.01
1
DS(on)
R
28
Figure 3. On−Resistance versus Drain Current
1.8
1.6
1.4
1.2
(NORMALIZED)
0.8
, DRAIN−TO−SOURCE RESISTANCE
0.6
DS(on)
R
ID = 3 A
V
GS
1
−50 0−25 5025
Figure 5. On−Resistance Variation with
T = 25°C
T = −55°C
34 1091112
ID, DRAIN CURRENT (AMPS)
765
0.025
0.02
0.015
, DRAIN−TO−SOURCE RESISTANCE (Ω)
0.01
DS(on)
R
and Temperature
10,000
= 10 V
1000
, LEAKAGE (nA)
DSS
I
10075 125
TJ, JUNCTION TEMPERATURE (°C)
150
Temperature
VGS = 10 V
21110987
1
312
ID, DRAIN CURRENT (AMPS)
654
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
VGS = 0 V
TJ = 150°C
TJ = 125°C
100
10
0152010 305
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus V oltage
25
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