ON Semiconductor NTLTD7900ZR2 Technical data

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NTLTD7900ZR2

Power MOSFET

9 A, 20 V, Logic Level, N−Channel
Micro8] Leadless

EZFETs™ are an advanced series of Power MOSFETs which

contain monolithic back−to−back Zener diodes. These Zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low R

DS(on)

and true
logic level performance. EZFET devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are DC−DC converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones.

Features

• Pb−Free Package is Available

Applications

• Zener Protected Gates Provide Electrostatic Discharge Protection

• Designed to Withstand 4000 V Human Body Model

• Ultra Low R

Battery Life

Provides Higher Efficiency and Extends

DS(on)

• Logic Level Gate Drive − Can be Driven by Logic ICs

• Micro8 Leadless Surface Mount Package − Saves Board Space

• I

Specified at Elevated Temperature

DSS

MAXIMUM RATINGS (T

Rating

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current (Note 1)

T

= 25°C

A

= 85°C

T

A

Pulsed Drain Current

(tp v 10 ms)

Continuous Source−Diode

Conduction (Note 1)

Total Power Dissipation (Note 1)

TA = 25°C
TA = 85°C

Operating Junction and Storage

Temperature Range

Thermal Resistance (Note 1)

Junction−to−Ambient

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. When surface mounted to 1″ x1″ FR−4 board.

= 25°C unless otherwise noted)

J

Symbol 10 Sec

DSS

GS

I

I

DM

P

TJ, T

R

D

I

s

D

stg

q

JA

9.0

6.4

2.9 1.4 A

3.2

1.7

−55 to 150 °C

38 82 °C/W

Steady

State

20 V

±12 V

6.0

4.3

30 A

1.5

0.79

Unit

A

W

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9 AMPERES

20 VOLTS

R

DS(on)

= 4.5 V, ID = 6.5 A)

(V

GS

R

DS(on)

= 26 mW

= 31 mW

(VGS = 2.5 V, ID = 5.8 A)

DD

2.4 kW 2.4 kW

G

1

N−Channel N−Channel

1

Micro8 LEADLESS

CASE 846C

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

PIN ASSIGNMENT

Drain

8

Drain

7

6

Drain

5

Drain

(Bottom View)

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

G

2

S

1

MARKING DIAGRAM

1

7900

AYWW

Source 1

1

Gate 1

Drain

2

Source 2

3

Gate 2

4

S

G

2

© Semiconductor Components Industries, LLC, 2006

March, 2006 − Rev. 6

1 Publication Order Number:

NTLTD7900ZR2/D

NTLTD7900ZR2

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 2)

= 0 Vdc, ID = 250 mAdc)

(V

GS

Zero Gate Voltage Drain Current

(V

= 16 Vdc, VGS = 0 Vdc)

DS

(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 85°C)

Gate−Body Leakage Current

(V

= "4.5 Vdc, VDS = 0 Vdc)

GS

(VGS = "12 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage (Note 2)

= VGS, ID = 250 mAdc)

(V

DS

Static Drain−to−Source On−Resistance (Note 2)

(V

= 4.5 Vdc, ID = 6.5 Adc)

GS

= 2.5 Vdc, ID = 5.8 Adc)

(V

GS

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance C

(VDS = 16 Vdc, VGS = 0 V,

f = 1.0 MHz)

Transfer Capacitance C

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

(VGS = 4.5 Vdc, VDD = 10 Vdc,

= 1.0 Adc, RG = 9.1 W)

I

D

(Note 2)

Fall Time t

Gate Charge

Gate Charge Q

(VGS = 4.5 Vdc, ID = 6.5 Adc,

V

= 10 Vdc)

DS

(Note 2)

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 1.0 Adc, VGS = 0 Vdc)

I

= 1.0 Adc, VGS = 0 Vdc, TJ = 85°C)

S

(Note 2)

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

Symbol Min Ty p Max Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

C

t

d(on)

d(off)

Q

Q

V

iss

oss

rss

SD

20 24 −

−

−

−

−

−

−

−

−

1.0
20

1.0

500

0.4 0.67 1.0

−

−

21
27

26
31

− 7.4 15

− 237 400

− 4.1 10 pF

− 0.55 1.0 ms

r

− 1.17 2.0

− 1.87 3.0

f

T

1

2

− 4.8 7.0

− 12 18

− 0.7 −

− 3.7 − nC

−

−

0.69

0.62

0.8

−

Vdc

mAdc

mAdc
mAdc

Vdc

mW

pF

ms

nC

Vdc

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NTLTD7900ZR2

TYPICAL ELECTRICAL CHARACTERISTICS

8

6

4

, GATE−CURRENT (mA)

2

GSS

I

0

VGS, GATE−TO−SOURCE VOLTAGE (V)

12 15 189630

Figure 1. Gate−Current versus Gate−Source

Voltage

30

24

18

12

, DRAIN CURRENT (A)

D

I

6

0

2.4 V

2.8 V

3.5 V

4.5 V
10 V

0

2 0.4

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

46810

2.2 V

2.0 V

1.8 V

1.6 V

1.4 V

VGS = 1.2 V

10,000

1000

100

TJ = 150°C

TJ = 25°C

, GATE−CURRENT (mA)

I

GSS

10

1

0.1

0.01
0

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Gate−Current versus Gate−Source

Voltage

30

24

18

12

, DRAIN CURRENT (A)

6

D

I

0

0 0.8 1.2 1.6 2.4

VGS, GATE−TO−SOURCE VOLTAGE (V)

TC = 25°C

TC = 125°C

TC = −55°C

12 15963

2.0

Figure 3. On−Region Characteristics

0.06

0.05

0.04

0.03

0.02

0.01

, DRAIN−TO−SOURCE RESISTANCE (W)

0

0 6 12 18

DS(on)

R

Figure 5. On−Resistance versus Drain Current

Figure 4. Transfer Characteristics

VGS = 2.5 V

VGS = 4.5 V

24 30

ID, DRAIN CURRENT (A)

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