The NCP5392P provides up to a four--phase buck solution which
combines differential voltage sensing, differential phase current
sensing, and adaptive voltage positioning to provide accurately
regulated power for both Intel and AMD processors. Dual--edge
pulse--width modulation (PWM) combined with inductor current
sensing reduces system cost by providing the fastest initial response
to dynamic load events. Dual--edge multiphase modulation reduces
the total bul k and ceramic output capacitance required to meet
transient regulation specifications.
A high performance operational error amplifier is provided to
simplify compensation of the system. Dynamic Reference Injection
further simplifies loop compensation by eliminating the need to
compromise bet we en closed--loop transient response and Dynamic
VID performance.
In addition, NCP5392P provides an automatic power saving
feature (Auto--PSI). When Auto--PSI function is enabled, NCP5392P
will automatically detect the VID transitions and direct the Vcore
regulator in or out of low power states. As a result, the best efficiency
scheme is always chosen.
Features
Meets Intel’s VR11.1 Specifications
Meets AMD 6 Bit Code Specifications
Dual--edge PWM for Fastest Initial Response to Transient Loading
High Performance Operational Error Amplifier
Internal Soft Start
Dynamic Reference Injection
DAC Range from 0.375 V to 1.6 V
DAC Feed Forward Function
0.5% DAC Voltage Accurac y from 1.0 V to 1.6 V
True Differential Remote Voltage Sensing Amplifier
Phase--to--Phase Current Balancing
“Lossless” Differential Inductor Current Sensing
Differential Current Sense Amplifiers for each Phase
Adaptive Voltage Positioning (AVP)
Oscillator Frequency Range of 100 kHz – 1 MHz
Latched Over Voltage Protection (OVP)
Guaranteed Startup into Pre-- Charged Loads
Threshold Sensitive Enable Pin for VTT Sensing
Power Good Output with Internal Delays
Thermally Compensated Current Monitoring
Automatic Power Saving (AUTO PSI Mode)
Compatible to PSI Power Saving Requirements
This is a Pb--Free Device
Applications
Desktop Processors
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MARKING
DIAGRAM
1
401
40 PIN QFN, 6x6
MN SUFFIX
CASE 488AR
NCP5392P = Specific Device
Code
A= Assembly Location
WL= Wafer Lot
YY= Year
WW= Work Week
G= Pb-- Free Package
*Pin 41 is the thermal pad on the bottomof thedevice.
ORDERING INFORMATION
DevicePackageShipping
NCP5392PMNR2G* QFN--40
(Pb--Free)
*Temperature Range: 0Cto85C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
31G2PWM output pulse to gate driver. 3-- level output (see G1)
32G3PWM output pulse to gate driver. 3-- level output (see G1)
33G4PWM output pulse to gate driver. 3-- level output (see G1)
3412VMONMonitor a 12 V input through a resistor divider.
35VCCPower for the internal control circuits.
36DACDAC Feed Forward Output
37PSIPower Saving Control. Low = power saving operation, High = normal operation. PSI signal has higher priority
38APSI_ENAPSI_EN High: Enable AUTO PSI function. When PSI = low, system will be forced into PSI mode, uncondi-
39VR_RDYOpen collector output. High indicates that the output is regulating
40PH_PSIPH_PSI Pin select one or two phase operation in PSI mode. PH_PSI = low, two phase operation, PH_PSI =
FLAGGNDPower supply return (QFN Flag)
trimmed output voltage of 2 V.
the Application Schematics. To disable the overcurrent feature, connect this pin directly to the ROSC pin. T o
guarantee correct operation, this pin should only be connected to the voltage generated by the ROSC pin; do
not connect this pin to any externally generated voltages.
High = HSFET Enabled
over APSI_EN signal.
tionally. When PSI = high, APSI_EN will determine if the system needs to be in AUTO PSI mode. Once in
AUTO PSI mode, system switches on/off PSI functions automatically based on VID change status.
high, one phase operation.
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NCP5392P
PIN CONNECTIONS VS. PHASE COUNT
Number of PhasesG4G3G2G1CS4--CS4NCS3--CS3NCS2--CS2NCS1--CS1N
4Phase 4
Out
3Tie to
GND
2Tie to
GND
MAXIMUM RATINGS
ELECTRICAL INFORMATION
Pin Symbol
COMP5.5 V-- 0 . 3 V10 mA10 mA
V
DRP
V–GND + 300 mVGND – 300 mV1mA1mA
DIFFOUT5.5 V-- 0 . 3 V20 mA20 mA
VR_RDY5.5 V-- 0 . 3 VN/A20 mA
VCC7.0 V-- 0 . 3 VN/A10 mA
ROSC5.5 V-- 0 . 3 V1mAN/A
IMON Output1.1 V
All Other Pins5.5 V-- 0 . 3 V
*All signals referenced to AGND unless otherwise noted.
Phase 3
Out
Phase 3
Out
Phase 2
Out
Phase 2
Out
Phase 2
Out
Tie to
GND
V
MAX
Phase 1
Out
Phase 1
Out
Phase 1
Out
Phase 4 CS
input
TietoCSN
pin used
TietoCSN
pin used
V
MIN
Phase 3 CS
input
Phase 3 CS
input
Phase 2 CS
input
I
SOURCE
Phase 2 CS
input
Phase 2 CS
input
TietoCSN
pin used
Phase 1 CS
Phase 1 CS
Phase 1 CS
I
SINK
5.5 V-- 0 . 3 V5mA5mA
input
input
input
THERMAL INFORMATION
Rating
Thermal Characteristic, QFN Package (Note 1)R
Operating Junction Temperature Range (Note 2)T
Operating Ambient Temperature RangeT
Maximum Storage T emperature RangeT
SymbolValueUnit
θ
JA
J
A
STG
34C/W
0to125C
0to+85C
--55 to +150C
Moisture Sensitivity Level, QFN PackageMSL1
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*The maximum package power dissipation must be observed.
1. JESD 51--5 (1S2P Direct-- Attach Method) with 0 LFM.
2. JESD 51--7 (1S2P Direct-- Attach Method) with 0 LFM.
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8
NCP5392P
ELECTRICAL CHARACTERISTICS
(Unless otherwise stated: 0C<TA<85C; 4.75 V < VCC< 5.25 V; All DAC Codes; C
Parameter
Test ConditionsMinTypMaxUnit
ERROR AMPLIFIER
Input Bias Current (Note 3)
Noninverting Voltage Range (Note 3)01.33V
Input Offset Voltage (Note 3)V+=V-- =1.1V-- 1 . 0--1.0mV
Open Loop DC GainCL=60pFtoGND,
R
=10KΩ to GND
L
Open Loop Unity Gain BandwidthCL=60pFtoGND,
R
=10KΩ to GND
L
Open Loop Phase MarginCL=60pFtoGND,
R
=10KΩ to GND
L
Slew RateΔVin= 100 mV, G = -- 10 V/V,
ΔV
=1.5V–2.5V,
out
C
=60pFtoGND,
L
DC Load = 125 mAtoGND
Maximum Output VoltageI
Minimum Output VoltageI
Output source current (Note 3)V
Output sink current (Note 3)V
=2.0mA3.5----V
SOURCE
=0.2mA----50mV
SINK
=3.5V2----mA
out
=1.0V2----mA
out
DIFFERENTIAL SUMMING AMPLIFIER
VSN Input Bias Current
VSN Voltage = 0 V30mA
VSP Input ResistanceDRVON = Low
DRVON = High
VSP Input Bias VoltageDRVON = Low
DRVON = High
Input Voltage Range (Note 3)-- 0 . 3--3.0V
--3 dB BandwidthCL=80pFtoGND,
R
=10KΩ to GND
L
Closed Loop DC Gain VS to DiffoutVS+ to VS-- = 0.5 to 1.6 V0.981.01.025V/V
Maximum Output VoltageI
Minimum Output VoltageI
Output source current (Note 3)V
Output sink current (Note 3)V
=2mA3.0----V
SOURCE
=2mA----0.5V
SINK
=3V2.0----mA
out
=0.5V2.0----mA
out
INTERNAL OFFSET VOLTAGE
Offset Voltage to the (+) Pin of the
Error Amp and the VDRP pin
VDROOP AMPLIFIER
Input Bias Current (Note 3)
Non--inverting Voltage Range (Note 3)01.33V
Input Offset Voltage (Note 3)V+=V-- =1.1V-- 4 . 0--4.0mV
Open Loop DC GainCL= 20 pF to GND including
ESD, R
=1kΩ to GND
L
Open Loop Unity Gain BandwidthCL= 20 pF to GND including
ESD, R
=1kΩ to GND
L
Slew RateCL= 20 pF to GND including
ESD, R
Maximum Output VoltageI
Minimum Output VoltageI
Output source current (Note 3)V
Output sink current (Note 3)V
=1kΩ to GND
L
=4.0mA3----V
SOURCE
=1.0mA----1V
SINK
=3.0V4----mA
out
=1.0V1----mA
out
3. Guaranteed by design, not tested in production.
=0.1mF)
VCC
--200200nA
--100dB
--10--MHz
--80--
--5--V/ms
1.5
kΩ
17
0.09
0.66
--10--MHz
--1.30--V
--200200nA
--100dB
--10--MHz
--5--V/ms
V
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NCP5392P
ELECTRICAL CHARACTERISTICS
(Unless otherwise stated: 0C<TA<85C; 4.75 V < VCC< 5.25 V; All DAC Codes; C
ParameterUnitMaxTypMinTest Conditions
CSSUM AMPLIFIER
Current Sense Input to CSSUM Gain
Current Sense Input to CSSUM --3 dB
Bandwidth
Current Sense Input to CSSUM
Output Slew Rate
Current Summing Amp Output Offset
--60 mV < CS < 60 mV-- 4.00--3.88--3.76V/V
CL=10pFtoGND,
R
=10kΩ to GND
L
ΔVin=25mV,CL=10pFto
GND, Load = 1 k to 1.3 V
CSx – CSNx = 0, CSx = 1.1 V-- 1 5--+15mV
Voltage
Maximum CSSUM Output VoltageCSx – CSxN = --0.15 V
(All Phases) I
SOURCE
=1mA
Minimum CSSUM Output VoltageCSx – CSxN = 0.066 V
Output source current (Note 3)V
Output sink current (Note 3)V
(All Phases) I
=3.0V1----mA
out
=0.3V1----mA
out
SINK
=1mA
PSI (Power Saving Control, Active Low)
Enable High Input Leakage Current
Upper ThresholdV
Lower ThresholdV
HysteresisV
External1KPullupto3.3V----1.0mA
UPPER
LOWER
-- V
UPPER
LOWER
APSI_EN (AUTO PSI Function Enable, Active High)
Enable High Input Leakage Current
Upper ThresholdV
Lower ThresholdV
HysteresisV
External 1k Pullup to 3.3 V----1.0mA
UPPER
LOWER
-- V
UPPER
LOWER
PH_PSI (PSI Phase Selection)
Enable High Input Leakage Current
Upper ThresholdV
Lower ThresholdV
External 1k Pullup to 3.3 V----1.0mA
UPPER
LOWER
DRVON
Output High Voltage
Sourcing 500 mA3.0----V
Sourcing Current for Output HighVCC=5V--2.54.0mA
Output Low VoltageSinking 500 mA----0.7V
Sinking Current for Output Low2.5----mA
Delay TimePropagation Delay from EN Low
to DRVON
Rise TimeCL(PCB) = 20 pF, ΔVo= 10% to
90%
Fall TimeCL(PCB) = 20 pF, ΔVo= 10% to
90%
Internal Pulldown Resistance3570140kΩ
VCCVoltage when DRVON
Output Valid
CURRENT SENSE AMPLIFIERS
Input Bias Current (Note 3)
CSx = CSxN = 1.4 V--0--nA
Common Mode Input Voltage Range
(Note 3)
Differential Mode Input Voltage Range
(Note 3)
3. Guaranteed by design, not tested in production.
=0.1mF)
VCC
--4--MHz
--4--V/s
3.0----V
----0.3V
--650770mV
450550--mV
--100--mV
--650770mV
450550--mV
--100--mV
----0.7V
0.3----V
--10--ns
--130--ns
--10--ns
----2.0V
-- 0 . 3--2.0V
--120--120mV
CC
CC
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