ON Semiconductor BDX33B, BDX33C, BDX34B, BDX34C Service Manual
BDX33B, BDX33C* (NPN)
BDX34B, BDX34C* (PNP)
BDX33C and BDX34C are Preferred Devices
Darlington Complementary
Silicon Power Transistors
These devices are designed for general purpose and low speed
switching applications.
http://onsemi.com
Features
•High DC Current Gain - h
= 2500 (typ.) at IC = 4.0
FE
•Collector-Emitter Sustaining Voltage at 100 mAdc
V
CEO(sus)
= 80 Vdc (min) - BDX33B, BDX334B
= 100 Vdc (min) - BDX33C, BDX334C
•Low Collector-Emitter Saturation Voltage
V
= 2.5 Vdc (max) at IC = 3.0 Adc
CE(sat)
- BDX33B, 33C/34B, 34C
•Monolithic Construction with Build-In Base-Emitter Shunt Resistors
•Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
BDX33B, BDX34B
BDX33C, BDX34C
Collector-Base Voltage
BDX33B, BDX34B
BDX33C, BDX34C
Emitter-Base Voltage V
Collector Current - Continuous
- Peak
Base Current I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
CEO
V
I
P
TJ, T
CB
EB
C
B
D
-65 to +150 °C
stg
80
100
80
100
5.0 Vdc
10
15
0.25 Adc
70
0.56
Vdc
Vdc
Adc
W
W/°C
DARLINGTON
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80-100 VOLTS, 65 WATTS
TO-220AB
1
2
3
MARKING DIAGRAM
CASE 221A-09
STYLE 1
BDX3xyG
AY WW
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction-to-Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 12
R
q
JC
1.78 °C/W
1 Publication Order Number:
BDX3xy = Device Code
x = 3 or 4
y = B or C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
BDX33B/D
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)
80
60
40
20
, POWER DISSIPATION (WATTS)
D
P
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0) BDX33B/BDX34B
BDX33C/BDX34C
Collector-Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0, RBE = 100) BDX33B/BDX34B
BDX33C/BDX33C
Collector-Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) BDX33B/BDX34B
BDX33C/BDX34C
Collector Cutoff Current
(VCE = 1/2 rated V
, IB = 0) TC = 25°C
CEO
TC = 100°C
Collector Cutoff Current
(VCB = rated V
, IE = 0) TC = 25°C
CBO
TC = 100°C
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C
Collector-Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc) BDX33B, 33C/34B, 34C
Base-Emitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C
Diode Forward Voltage
(IC = 8.0 Adc)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. Pulse Test non repetitive: Pulse Width = 0.25 seconds.
Symbol
V
CEO(sus)
V
CER(sus)
V
CEX(sus)
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
V
F
Min
80
100
80
100
80
100
-
-
-
-
-
750
-
-
-
Max
-
-
-
-
-
-
0.5
10
1.0
5.0
10
-
2.5
2.5
4.0
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
-
Vdc
Vdc
Vdc
http://onsemi.com
2
Loading...