ON Semiconductor BDW42, BDW42G, BDW46, BDW46G, BDW47 Service Manual
...
BDW42 - NPN, BDW46,
BDW47 - PNP
BDW42 and BDW47 are Preferred Devices
Darlington Complementary
Silicon Power Transistors
This series of plastic, medium-power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
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Features
•High DC Current Gain - h
= 2500 (typ) @ IC = 5.0 Adc.
FE
•Collector Emitter Sustaining Voltage @ 30 mAdc:
V
CEO(sus)
100 Vdc (min) - BDW42/BDW47
= 80 Vdc (min) - BDW46
•Low Collector Emitter Saturation Voltage
V
3.0 Vdc (max) @ IC = 10.0 Adc
= 2.0 Vdc (max) @ IC = 5.0 Adc
CE(sat)
•Monolithic Construction with Built-In Base Emitter Shunt resistors
•TO-220AB Compact Package
•Pb-Free Packages Are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector‐Emitter Voltage
BDW46
BDW42, BDW47
Collector‐Base Voltage
BDW46
BDW42, BDW47
Emitter‐Base Voltage V
Collector Current I
Base Current I
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction-to-Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
V
CEO
V
P
TJ, T
R
CB
EB
C
B
D
-55 to +150 °C
stg
q
JC
80
100
80
100
5.0 Vdc
15 Adc
0.5 Adc
85
0.68
1.47 °C/W
Vdc
Vdc
W
W/°C
15 AMP DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80-100 VOLT, 85 WATT
MARKING
DIAGRAM
4
TO-220AB
CASE 221A-09
STYLE 1
1
2
3
BDWxx = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
x = 42, 46, or 47
ORDERING INFORMATION
Device Package Shipping
BDW42 TO-220AB 50 Units/Rail
BDW42G TO-220AB
BDW46 TO-220AB 50 Units/Rail
BDW46G TO-220AB
BDW47
BDW47G 50 Units/Rail
(Pb-Free)
(Pb-Free)
TO-220AB
(Pb-Free)
BDWxx
AYWWG
50 Units/Rail
50 Units/Rail
50 Units/RailTO-220AB
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 13
Preferred devices are ON Semiconductor recommended
choices for future use and best overall value
Publication Order Number:
BDW42/D
BDW42 - NPN, BDW46, BDW47 - PNP
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ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0) BDW46
BDW42/BDW47
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0) BDW46
(VCE = 50 Vdc, IB = 0) BDW42/BDW47
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0) BDW46
(VCB = 100 Vdc, IE = 0) BDW42/BDW47
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 10 mAdc)
(IC = 10 Adc, IB = 50 mAdc)
Base-Emitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)
SECOND BREAKDOWN (Note 2)
Second Breakdown Collector
Current with Base Forward Biased
BDW42 VCE = 28.4 Vdc
VCE = 40 Vdc
BDW46/BDW47 VCE = 22.5 Vdc
VCE = 36 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDW42
BDW46/BDW47
Small-Signal Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2. Pulse Test non repetitive: Pulse Width = 250 ms.
Symbol
V
CEO(sus)
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
I
S/b
f
T
C
ob
h
fe
Min
80
100
-
-
-
-
-
1000
250
-
-
-
3.0
1.2
3.8
1.2
4.0
-
-
300
Max
-
-
2.0
2.0
1.0
1.0
2.0
-
-
2.0
3.0
3.0
-
-
-
-
-
200
300
-
Unit
Vdc
mAdc
mAdc
mAdc
Vdc
Vdc
Adc
MHz
pF
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BDW42 - NPN, BDW46, BDW47 - PNP
90
80
70
60
50
40
30
20
, POWER DISSIPATION (WATTS)
D
P
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
R
V
2
APPROX
+ 8.0 V
0
V
1
APPROX
- 12 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
25 ms
B
D
51
1
[ 8.0 k [ 150
+ 4.0 V
for td and tr, D1 id disconnected
and V2 = 0
For NPN test circuit reverse all polarities
Figure 2. Switching Times Test Circuit
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.1
0.07
0.05
r(t) EFFECTIVE TRANSIENT
0.03
0.02
THERMAL RESISTANCE (NORMALIZED)
0.01
0.01
0.2
0.1
0.05
0.02
SINGLE PULSE
0.01
0.02
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
0.03 0.3 3.0 30 300
V
CC
- 30 V
R
C
TUT
SCOPE
t, TIME OR PULSE WIDTH (ms)
5.0
3.0
2.0
1.0
0.7
0.5
t, TIME (s)μ
0.3
0.2
VCC = 30 V
IC/IB = 250
0.1
IB1 = I
0.07
TJ = 25°C
0.05
0.1
P
(pk)
DUTY CYCLE, D = t1/t
t
s
t
f
t
r
B2
0.2 0.3 0.7 3.0 10
td @ V
0.5 2.0 7.0
= 0 V
BE(off)
1.0 5.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
R
(t) = r(t) R
q
JC
R
q
JC
t
1
t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
2
= 1.92°C/W
- TC = P
q
(pk)
JC
1
R
(t)
q
JC
Figure 4. Thermal Response
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