ON Semiconductor BCP53T1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCP53T1/D
This PNP Silicon Epitaxial transistor is designed for use in audio amplifier
applications. The device is housed in the SOT-223 package which is designed for
medium power surface mount applications.
• High Current: 1.5 Amps
• NPN Complement is BCP56
Motorola Preferred Device
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
• The SOT-223 Package can be soldered using wave or reflow. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die
• Available in 12 mm Tape and Reel
COLLECTOR 2,4
4
Use BCP53T1 to order the 7 inch/1000 unit reel.
Use BCP53T3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current I
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Temperature Range TJ, T
(T
= 25°C unless otherwise noted)
C
Rating
(1)
BASE
1
EMITTER 3
Symbol Value Unit
CEO
CBO
EBO
C
P
D
stg
–65 to 150 °C
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
–80 Vdc
–100 Vdc
–5.0 Vdc
1.5 Adc
1.5
12
Watts
mW/°C
DEVICE MARKING
AH
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction-to-Ambient (surface mounted) R
Lead T emperature for Soldering, 0.0625″ from case
Time in Solder Bath
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
θJA
T
L
83.3 °C/W
260
10
°C
Sec
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
BCP53T1
ELECTRICAL CHARACTERISTICS
Characteristics
(T
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = –100 µAdc, IE = 0) V
Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V
Collector-Emitter Breakdown Voltage (IC = –100 µAdc, RBE = 1.0 kohm) V
Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V
Collector-Base Cutoff Current (VCB = –30 Vdc, IE = 0) I
Emitter-Base Cutoff Current (VEB = –5.0 Vdc, IC = 0) I
ON CHARACTERISTICS
DC Current Gain
(IC = –5.0 mAdc, VCE = –2.0 Vdc)
(IC = –150 mAdc, VCE = –2.0 Vdc)
(IC = –500 mAdc, VCE = –2.0 Vdc)
Collector-Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) V
Base-Emitter On Voltage (IC = –500 mAdc, VCE = –2.0 Vdc) V
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 35 MHz)
TYPICAL ELECTRICAL CHARACTERISTICS
Symbol Min Typ Max Unit
(BR)CBO
(BR)CEO
(BR)CER
(BR)EBO
CBO
EBO
h
FE
CE(sat)
BE(on)
f
T
–100 — — Vdc
–80 — — Vdc
–100 — — Vdc
–5.0 — — Vdc
— — –100 nAdc
— — –10 µAdc
25
40
25
— — –0.5 Vdc
— — –1.0 Vdc
— 50 — MHz
—
—
—
—
250
—
—
500
VCE = 2 V
200
100
FE
50
h , DC CURRENT GAIN
20
1 3 5 10 30 50 100 300 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1
0.8
V
@ IC/IB = 10
(BE)sat
V
@ VCE = 2 V
(CE)sat
(BE)on
@ IC/IB = 10
10010
V, VOLTAGE (VOLTS)
0.6
0.4
0.2
V
0
1
IC, COLLECTOR CURRENT (mA)
Figure 3. Saturation and “ON” Voltages
1000
500
300
100
50
20
T
f , CURRENT GAIN BANDWIDTH PRODUCT (MHz)
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 2. Current Gain Bandwidth Product
120
110
100
90
C, CAPACITANCE (pF)
80
70
60
50
40
30
20
10
0
C
ib
C
ob
0
V, VOLTAGE (VOLTS)
Figure 4. Capacitances
VCE = 2 V
1000
2018161412108642
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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