ON Semiconductor BC549C, BC550C Service Manual
BC549C, BC550C
Low Noise Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BC549C
BC550C
Collector−Base Voltage
BC549C
BC550C
Emitter−Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above = 25°C
Total Device Dissipation @ TA = 25°C
Derate above = 25°C
Operating and Storage Junction
Temperature Range
V
CEO
V
CBO
EBO
P
P
TJ, T
C
D
D
−55 to +150 °C
stg
30
45
30
50
5.0 Vdc
100 Vdc
625
5.0
1.5
12
Vdc
Vdc
mW
mW/°C
W
mW/°C
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2
BASE
1
2
3
STRAIGHT LEAD
BULK PACK
COLLECTOR
1
3
EMITTER
TO−92
CASE 29
STYLE 17
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
R
q
JA
R
q
JC
200 °C/W
83.3 °C/W
MARKING DIAGRAM
BC5x
yC
AYWWG
G
BC5xyC = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
x = 4 or 5
y = 9 or 0
ORDERING INFORMATION
Device Package Shipping
BC549CG TO−92
(Pb−Free)
BC550CG TO−92
(Pb−Free)
5000 Units / Bulk
5000 Units / Bulk
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 2
1 Publication Order Number:
BC550C/D
BC549C, BC550C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
= 10 mAdc, IB = 0)
C
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
= 10 mAdc, IC = 0)
(I
E
Collector Cutoff Current
(V
= 30 V, IE = 0)
CB
(VCB = 30 V, IE = 0, TA = +125°C)
Emitter Cutoff Current
(V
= 4.0 Vdc, IC = 0)
EB
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 10 mAdc, IB = see note 1)
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2)
Base−Emitter Saturation Voltage
(I
= 100 mAdc, IB = 5.0 mAdc)
C
Base−Emitter On Voltage
= 10 mAdc, VCE = 5.0 Vdc)
(I
C
= 100 mAdc, VCE = 5.0 Vdc)
(I
C
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
= 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
C
Collector−Base Capacitance
(V
= 10 Vdc, IE = 0, f = 1.0 MHz)
CB
Small−Signal Current Gain
(I
= 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
C
Noise Figure
= 200 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)
(I
C
= 200 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)
(I
C
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300 ms − Duty cycle = 2%.
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
f
C
h
FE
T
cbo
fe
45 − −
50 − −
5.0 − −
−
−
−
−
15
5.0
− − 15
100
420
−
−
−
270
500
0.075
0.3
0.25
800
0.25
0.6
0.6
− 1.1 −
−
−
0.55
0.52
0.55
0.62
0.7
− 250 −
− 2.5 −
450 600 900
−
−
−
Vdc
Vdc
Vdc
nAdc
mAdc
nAdc
Vdc
Vdc
Vdc
MHz
pF
dB
NF
NF
1
2
−
−
0.6
−
10
2.5
−
−
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
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