ON Semiconductor BC549B-D Service Manual
Low Noise Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BC549 BC550 Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
Thermal Resistance, Junction to Case R
CEO
CBO
EBO
P
P
TJ, T
C
D
D
stg
JA
JC
30 45 Vdc
30 50 Vdc
5.0 Vdc
100 mAdc
625
5.0
1.5
12
–55 to +150 °C
200 °C/W
83.3 °C/W
mW
mW/°C
Watt
mW/°C
BC549B,C
BC550B,C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
COLLECTOR
1
2
BASE
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
= 10 mAdc, IB = 0) BC549B,C
C
Collector–Base Breakdown Voltage
(I
= 10 µAdc, IE = 0) BC549B,C
C
Emitter–Base Breakdown Voltage
(I
= 10 Adc, IC = 0)
E
Collector Cutoff Current
(V
= 30 V, IE = 0)
CB
= 30 V, IE = 0, TA = +125°C)
(V
CB
Emitter Cutoff Current
(V
= 4.0 Vdc, IC = 0)
EB
= 25°C unless otherwise noted)
A
BC550B,C
BC550B,C
3
EMITTER
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
30
45
30
50
5.0 — — Vdc
—
—
— — 15 nAdc
—
—
—
—
—
—
—
—
—
—
15
5.0
Vdc
Vdc
nAdc
µAdc
Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 1
1 Publication Order Number:
BC549B/D
BC549B,C BC550B,C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic
ON CHARACTERISTICS
DC Current Gain
(I
= 10 µAdc, VCE = 5.0 Vdc) BC549B/550B
C
BC549C/550C
= 2.0 mAdc, VCE = 5.0 Vdc) BC549B/550B
(I
C
BC549C/550C
Collector–Emitter Saturation Voltage
(I
= 10 mAdc, IB = 0.5 mAdc)
C
(I
= 10 mAdc, IB = see note 1)
C
(I
= 100 mAdc, IB = 5.0 mAdc, see note 2)
C
Base–Emitter Saturation Voltage
(I
= 100 mAdc, IB = 5.0 mAdc)
C
Base–Emitter On Voltage
(I
= 10 µAdc, VCE = 5.0 Vdc)
C
= 100 µAdc, VCE = 5.0 Vdc)
(I
C
(I
= 2.0 mAdc, VCE = 5.0 Vdc)
C
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
= 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
C
Collector–Base Capacitance
(V
= 10 Vdc, IE = 0, f = 1.0 MHz)
CB
Small–Signal Current Gain
(I
= 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC549B/BC550B
C
Noise Figure
(I
= 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz)
C
= 200 µAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz)
(I
C
NOTES:
1. I
is value for which IC = 11 mA at VCE = 1.0 V.
B
2. Pulse test = 300 µs – Duty cycle = 2%.
BC549C/BC550C
Symbol Min Typ Max Unit
h
V
CE(sat)
V
BE(sat)
V
BE(on)
C
FE
100
100
200
420
—
—
—
150
270
290
500
0.075
0.3
0.25
—
—
450
800
0.25
0.6
0.6
— 1.1 — Vdc
—
—
0.55
f
T
cbo
h
fe
— 250 — MHz
— 2.5 — pF
240
450
0.52
0.55
0.62
330
600
—
—
0.7
500
900
—
Vdc
Vdc
—
dB
NF
NF
1
2
—
—
0.6
—
2.5
10
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
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