ON Semiconductor BC549B-D Service Manual

Low Noise Transistors

NPN Silicon

MAXIMUM RATINGS

Rating Symbol BC549 BC550 Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TA = 25°C

Derate above 25°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient R
Thermal Resistance, Junction to Case R

CEO
CBO
EBO

P

P

TJ, T

C

D

D

stg



JA



JC

30 45 Vdc
30 50 Vdc

5.0 Vdc
100 mAdc
625

5.0

1.5

12

–55 to +150 °C

200 °C/W

83.3 °C/W

mW

mW/°C

Watt

mW/°C

BC549B,C
BC550B,C

1

2

3

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

COLLECTOR

1

2

BASE

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I

= 10 mAdc, IB = 0) BC549B,C

C

Collector–Base Breakdown Voltage

(I

= 10 µAdc, IE = 0) BC549B,C

C

Emitter–Base Breakdown Voltage

(I

= 10 Adc, IC = 0)

E

Collector Cutoff Current

(V

= 30 V, IE = 0)

CB

= 30 V, IE = 0, TA = +125°C)

(V

CB

Emitter Cutoff Current

(V

= 4.0 Vdc, IC = 0)

EB

= 25°C unless otherwise noted)

A

BC550B,C

BC550B,C

3

EMITTER

Symbol Min Typ Max Unit

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

30
45

30
50

5.0 — — Vdc

—
—

— — 15 nAdc

—
—

—
—

—
—

—
—

—
—

15

5.0

Vdc

Vdc

nAdc
µAdc

 Semiconductor Components Industries, LLC, 2001

February, 2001 – Rev. 1

1 Publication Order Number:

BC549B/D

BC549B,C BC550B,C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

A

Characteristic

ON CHARACTERISTICS

DC Current Gain

(I

= 10 µAdc, VCE = 5.0 Vdc) BC549B/550B

C

BC549C/550C

= 2.0 mAdc, VCE = 5.0 Vdc) BC549B/550B

(I

C

BC549C/550C

Collector–Emitter Saturation Voltage

(I

= 10 mAdc, IB = 0.5 mAdc)

C

(I

= 10 mAdc, IB = see note 1)

C

(I

= 100 mAdc, IB = 5.0 mAdc, see note 2)

C

Base–Emitter Saturation Voltage

(I

= 100 mAdc, IB = 5.0 mAdc)

C

Base–Emitter On Voltage

(I

= 10 µAdc, VCE = 5.0 Vdc)

C

= 100 µAdc, VCE = 5.0 Vdc)

(I

C

(I

= 2.0 mAdc, VCE = 5.0 Vdc)

C

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(I

= 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

C

Collector–Base Capacitance

(V

= 10 Vdc, IE = 0, f = 1.0 MHz)

CB

Small–Signal Current Gain

(I

= 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC549B/BC550B

C

Noise Figure

(I

= 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz)

C

= 200 µAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz)

(I

C

NOTES:

1. I

is value for which IC = 11 mA at VCE = 1.0 V.

B

2. Pulse test = 300 µs – Duty cycle = 2%.

BC549C/BC550C

Symbol Min Typ Max Unit

h

V

CE(sat)

V

BE(sat)

V

BE(on)

C

FE

100
100
200
420

—
—
—

150
270
290
500

0.075

0.3

0.25

—

—
450
800

0.25

0.6

0.6

— 1.1 — Vdc

—
—

0.55

f

T

cbo

h

fe

— 250 — MHz

— 2.5 — pF

240
450

0.52

0.55

0.62

330
600

—

—

0.7

500
900

—

Vdc

Vdc

—

dB
NF
NF

1
2

—
—

0.6
—

2.5
10

R

S

i

n

e

n

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

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2

BC549B,C BC550B,C

2.0

1.5

1.0

0.8

0.6

0.4

, NORMALIZED DC CURRENT GAIN

0.3

FE

h

0.2

400
300

200

100

1.0
T

VCE = 10 V
T

= 25°C

A

0.9

0.8

0.7

0.6

= 25°C

A

V

BE(sat)

@ IC/IB = 10

V

BE(on)

@ VCE = 10 V

0.5

0.4

V, VOLTAGE (VOLTS)

0.3

IC, COLLECTOR CURRENT (mAdc)

Figure 2. Normalized DC Current Gain

0.2

0.1

2000.2 0.5 1.0 2.0 5.0 10 20 50 100

0

0.20.1 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mAdc)

Figure 3. “Saturation” and “On” Voltages

V

CE(sat)

@ IC/IB = 10

10

7.0

T

= 25°C

5.0

80
60

40
30

VCE = 10 V
T

= 25°C

A

3.0

2.0

C, CAPACITANCE (pF)

C

ib

C

ob

A

20

, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz)

T

f

0.5 1.00.7 2.0 5.0 7.0 10 20 50
I

, COLLECTOR CURRENT (mAdc)

C

Figure 4. Current–Gain — Bandwidth Product

170

160

150

140

130

, BASE SPREADING RESISTANCE (OHMS)

b

r

120

1.0

0.4 0.6 1.0 2.0 4.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitance

VCE = 10 V
f = 1.0 kHz

= 25°C

T

A

I

, COLLECTOR CURRENT (mAdc)

C

Figure 6. Base Spreading Resistance

100.1 0.2 0.5 1.0 2.0 5.0

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SEATING
PLANE

BC549B,C BC550B,C

PACKAGE DIMENSIONS

CASE 029–04

(TO–226AA)

ISSUE AD

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

A

B

R

P

L

F

K

D

XX

G

J

H

V

1

C

N

SECTION X–X

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
V 0.135 --- 3.43 ---

STYLE 17:

PIN 1. COLLECTOR

MILLIMETERSINCHES

2. BASE

3. EMITTER

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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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BC549B/D