ON Semiconductor BC546-D Service Manual
BC546B, BC547A, B, C,
BC548B, C
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector - Emitter Voltage
BC546
BC547
BC548
Collector - Base Voltage
BC546
BC547
BC548
Emitter - Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
CEO
V
CBO
EBO
P
P
TJ, T
C
D
D
−55 to +150 °C
stg
65
45
30
80
50
30
6.0 Vdc
100 mAdc
625
5.0
1.5
12
Vdc
Vdc
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 17
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COLLECTOR
1
2
BASE
3
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 6
R
q
JA
R
q
JC
200 °C/W
83.3 °C/W
1 Publication Order Number:
MARKING DIAGRAM
BC
54x
AYWWG
G
x = 6, 7, or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
BC546/D
BC546B, BC547A, B, C, BC548B, C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(I
= 1.0 mA, IB = 0) BC546
C
Collector − Base Breakdown Voltage
= 100 mAdc) BC546
(I
C
Emitter − Base Breakdown Voltage
= 10 mA, IC = 0) BC546
(I
E
Collector Cutoff Current
(V
= 70 V, VBE = 0) BC546
CE
= 50 V, VBE = 0) BC547
(V
CE
(V
= 35 V, VBE = 0) BC548
CE
(VCE = 30 V, TA = 125°C) BC546/547/548
ON CHARACTERISTICS
DC Current Gain
(I
= 10 mA, VCE = 5.0 V) BC547A
C
(I
= 2.0 mA, VCE = 5.0 V) BC546
C
BC546B/547B/548B
BC546B/547B/548B
BC547C/BC548C
BC547
BC548
BC547
BC548
BC547
BC548
BC548C
BC547
BC548
BC547A
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CES
h
FE
65
45
30
80
50
30
6.0
6.0
6.0
−
−
−
−
−
−
−
110
110
110
110
200
420
0.2
0.2
0.2
90
150
270
180
290
520
−
−
−
−
−
−
−
−
−
15
−
−
−
−
−
−
−
−
−
nA
15
15
−
4.0
mA
−
−
−
−
−
−
450
800
800
220
450
800
V
V
V
−
(I
= 100 mA, VCE = 5.0 V) BC547A/548A
C
BC546B/547B/548B
BC548C
Collector − Emitter Saturation Voltage
(I
= 10 mA, IB = 0.5 mA)
C
(IC = 100 mA, IB = 5.0 mA)
(IC = 10 mA, IB = See Note 1)
Base − Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
Base − Emitter On Voltage
(I
= 2.0 mA, VCE = 5.0 V)
C
= 10 mA, VCE = 5.0 V)
(I
C
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product
(I
= 10 mA, VCE = 5.0 V, f = 100 MHz) BC546
C
BC547
BC548
Output Capacitance
(V
= 10 V, IC = 0, f = 1.0 MHz)
CB
Input Capacitance
(V
= 0.5 V, IC = 0, f = 1.0 MHz)
EB
Small − Signal Current Gain
(I
= 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC546
C
BC547/548
BC547A
BC546B/547B/548B
BC547C/548C
Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, f = 1.0 kHz, Df = 200 Hz)
BC546
BC547
BC548
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
V
CE(sat)
V
BE(sat)
V
BE(on)
C
C
f
obo
h
NF
ibo
−
−
−
120
180
300
−
−
−
V
−
−
−
0.09
0.2
0.3
0.25
0.6
0.6
− 0.7 − V
V
0.55
−
T
150
150
150
300
300
300
−
−
0.7
0.77
MHz
−
−
−
− 1.7 4.5 pF
− 10 − pF
fe
125
125
125
240
450
220
330
600
−
−
500
900
260
500
900
−
dB
−
−
−
2.0
2.0
2.0
10
10
10
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