ON Semiconductor BC517-D Service Manual
BC517
l
s
Darlington Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
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COLLECTOR 1
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Collector−Emitter Voltage V
Collector Current − Continuous I
Total Power Dissipation @ TA = 25°C
Derate above T
Total Power Dissipation @ TA = 25°C
Derate above T
Operating and Storage Junction
Temperature Range
= 25°C
A
= 25°C
A
TJ, T
CES
CB
EB
C
P
P
D
D
stg
30 Vdc
40 Vdc
10 Vdc
1.0 Adc
625
12
1.5
12
−55 to +150 °C
mW
mW/°C
W
mW/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
200 °C/W
83.3 °C/W
TO−92
CASE 29
STYLE 17
BASE
2
EMITTER 3
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
BC
517
AYWWG
G
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1 Publication Order Number:
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
BC517G TO−92
(Pb−Free)
BC517RL1G TO−92
(Pb−Free)
BC517ZL1G TO−92
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.
5000 Units / Bulk
2000 / Tape & Ree
2000 / Ammo Pack
BC517/D
†
BC517
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
= 2.0 mAdc, IBE = 0)
C
Collector−Base Breakdown Voltage
= 10 mAdc, IE = 0)
(I
C
Emitter−Base Breakdown Voltage
= 100 mAdc, IC = 0)
(I
E
Collector Cutoff Current
(V
= 30 Vdc)
CE
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VCB = 10 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
= 20 mAdc, VCE = 2.0 Vdc)
C
Collector−Emitter Saturation Voltage
(I
= 100 mAdc, IB = 0.1 mAdc)
C
Collector−Emitter Saturation Voltage
(I
= 10 mAdc, VCE = 5.0 Vdc)
C
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(I
= 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
C
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
= |hfe| • f
2. f
T
test
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CES
I
CBO
I
EBO
h
V
CE(sat)
V
BE(on)
f
FE
T
30 − −
Vdc
Vdc
40 − −
Vdc
10 − −
nAdc
− − 500
nAdc
− − 100
nAdc
− − 100
−
30,000 − −
Vdc
− − 1.0
Vdc
− − 1.4
MHz
− 200 −
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
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