ON Semiconductor BC517, BC517ZL1, BC517RL1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
T emperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to
Ambient
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 2.0 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 100 nAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
CES
CB
EB
C
P
D
P
D
TJ, T
stg
R
q
JA
R
q
JC
= 25°C unless otherwise noted)
A
COLLECTOR 1
BASE
2
EMITTER 3
30 Vdc
40 Vdc
10 Vdc
1.0 Adc
625
12
1.5
12
–55 to +150 °C
200 °C/W
83.3 °C/W
mW
mW/°C
Watts
mW/°C
Order this document
by BC517/D
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Symbol Min Typ Max Unit
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CES
I
CBO
I
EBO
30 — — Vdc
40 — — Vdc
10 — — Vdc
— — 500 nAdc
— — 100 nAdc
— — 100 nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
BC517
ELECTRICAL CHARACTERISTICS
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 20 mAdc, VCE = 2.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
Base–Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)
(1)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width v 2.0%.
2. fT = |hfe| • f
test
(2)
(TA = 25°C unless otherwise noted) (Continued)
Symbol Min Typ Max Unit
h
V
CE(sat)
V
BE(on)
R
S
i
n
e
n
IDEAL
TRANSISTOR
FE
f
30,000 — — —
— — 1.0 Vdc
— — 1.4 Vdc
T
— 200 — MHz
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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