ON Semiconductor BC489BRL1, BC489B, BC489AZL1, BC489A, BC489 Datasheet

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

  

NPN Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

80 Vdc

Collector–Base Voltage V

CBO

80 Vdc

Emitter–Base Voltage V

EBO

5.0 Vdc

Collector Current — Continuous I

C

0.5 Adc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

1.5
12

Watt

mW/°C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction to Case

R

q

JC

83.3 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(1)

(IC = 10 mAdc, IB = 0)

V

(BR)CEO

80 — — Vdc

Collector–Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V

(BR)CBO

80 — — Vdc

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V

(BR)EBO

5.0 — — Vdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

I

CBO

— — 100 nAdc

ON CHARACTERISTICS*

DC Current Gain

(IC = 10 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc) BC489

BC489A
BC489B

(IC = 1.0 Adc, VCE = 5.0 Vdc)*

h

FE

40

60
100
160

15

—

—
160
260

—

—
400
250
400

—

—

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.

Order this document

by BC489/D

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SEMICONDUCTOR TECHNICAL DATA



CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

 Motorola, Inc. 1996

COLLECTOR

1

2

BASE

3

EMITTER

BC489,A,B

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Typ Max Unit

ON CHARACTERISTICS* (Continued)

Collector–Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)

V

CE(sat)

—
—

0.2

0.3

0.5
—

Vdc

Base–Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)

(1)

V

BE(sat)

—
—

0.85

0.9

1.2
—

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)

f

T

— 200 — MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

C

ob

— 7.0 — pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

C

ib

— 50 — pF

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.

Figure 1. Switching Time Test Circuits

*Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

5.0 µs

+10 V

0

V

in

5.0

µ

F

100

100

TURN–ON TIME

–1.0 V

V

CC

+40 V
R

L

OUTPUT

*CS < 6.0 pF

tr = 3.0 ns

5.0 µs

V

in

5.0

µ

F

100

100

TURN–OFF TIME

+V

BB

V

CC

+40 V
R

L

OUTPUT

*CS < 6.0 pF

tr = 3.0 ns

R

B

R

B

BC489,A,B

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 2. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

20070503020107.05.03.02.0

300

200

100

70

50

30

VCE = 2.0 V
TJ = 25

°

C

f , CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

T

C, CAPACITANCE (pF)

t, TIME (ns)

Figure 3. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

1005020105.02.01.00.50.20.1

80
60

40

20

10

4.0

TJ = 25

°

C

C

obo

C

ibo

8.0

Figure 4. Switching Time

IC, COLLECTOR CURRENT (mA)

500503020107.05.0

1.0 k

VCC = 40 V
IC/IB = 10
IB1 = I

B2

TJ = 25

°

C

700
500

300
200

100

70
50

30
20

10

t

s

t

f

t

r

td @ V

BE(off)

= 0.5 V

100

6.0

20010070 300

Figure 5. Thermal Response

t, TIME (ms)

1.0

r(t) TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k

50 k

100 k

D = 0.5

0.2

0.1

0.02

0.01

SINGLE PULSE

DUTY CYCLE, D = t1/t

2

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–469)
T

J(pk)

– TC = P

(pk)

Z

θ

JC(t)

T

J(pk)

– TA = P

(pk)

Z

θ

JA(t)

t

1

t

2

P

(pk)

Z

θ

JC(t)

= r(t)

•

R

θ

JC

Z

θ

JA(t)

= r(t)

•

R

θ

JA

SINGLE PULSE

BC489,A,B

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 k

1.0

I

C

, COLLECTOR CURRENT (mA)

2.0 5.0

Figure 6. Active Region — Safe Operating Area

CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

700
500

300
200

100

70
50

30
20

10

3.0 10 20 50307.0 70 100

BC489

100 µs

1.0 ms

1.0 s

TC = 25°C

TA = 25°C

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

0.5 0.7 1.0 2.0 3.0 5.0 7.0

10 20 30 50 70 100 200

200

100

80
60

40

h

FE

, DC CURRENT GAIN

TJ =125°C

25°C

–55°C

VCE = 1.0 V

300 500

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltages

V, VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0

0.5 1.0 20020

TJ = 25°C

V

BE(on)

@ VCE = 1.0 V

V

CE(sat)

@ IC/IB = 10

5.0 10 50 100

V

BE(sat)

@ IC/IB = 10

IC, COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0

0.1 101.0

TJ = 25°C

IC = 10 mA

0.05 0.2 0.5 2.0 5.0 20

100 mA 250 mA

50

mA

2.0 500 50

500 mA

BC489,A,B

5

Motorola Small–Signal Transistors, FETs and Diodes Device Data

IC, COLLECTOR CURRENT (mA)

Figure 10. Base–Emitter Temperature Coefficient

–0.8

–2.8

1.0 10010

R

θ

VB

for V

BE

0.5 2.0 5.0 20 50 200

–1.2

–1.6

–2.0

–2.4

R

VB

, TEMPERATURE COEFFICIENT (mV/ C)

°

θ

500

IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages

V, VOLTAGE (VOLTS)

–1.0

–0.8

–0.6

–0.4

–0.2

0

TJ = 25°C

V

BE(on)

@ VCE = –1.0 V

V

CE(sat)

@ IC/IB = 10

–0.5

V

BE(sat)

@ IC/IB = 10

–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500

IB, BASE CURRENT (mA)

Figure 12. Collector Saturation Region

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

–1.0

–0.8

–0.6

–0.4

–0.2

0

–0.1 –10–1.0

TJ = 25°C

IC = –10 mA

–0.05 –0.2 –0.5 –2.0 –5.0 –20

–50 mA

–50

–100 mA –250 mA –500 mA

IC, COLLECTOR CURRENT (mA)

Figure 13. Base–Emitter Temperature Coefficient

–0.8

–2.8

–1.0 –100–10

R

θ

VB

for V

BE

–0.5 –2.0 –5.0 –20 –50 –200

–1.2

–1.6

–2.0

–2.4

R

VB

, TEMPERATURE COEFFICIENT (mV/ C)

°

θ

–500

BC489,A,B

6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

R

A

P

J

L

F

B

K

G

H

SECTION X–X

C

V

D

N

N

X X

SEATING
PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––

1

CASE 029–04

(TO–226AA)

ISSUE AD

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

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BC489/D

*BC489/D*

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