ON Semiconductor BC372, BC373 Service Manual

BC372, BC373
s
High Voltage Darlington Transistors
NPN Silicon
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage V Collector Current − Continuous I Total Power Dissipation @ TA = 25°C
Derate above T Total Power Dissipation @ TA = 25°C
Derate above T Operating and Storage Junction
Temperature Range
= 25°C
A
= 25°C
A
BC372 BC373
BC372 BC373
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
V
CEO
V
CES
EBO
P
P
TJ, T
R
R
C
D
D
−55 to +150 °C
stg
q
JA
q
JC
100
80
100
80 12 Vdc
1.0 Adc
625
5.0
1.5 12
200 °C/W
83.3 °C/W
Vdc
Vdc
mW
mW/°C
W
mW/°C
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COLLECTOR 3
BASE
2
EMITTER 1
TO−92 CASE 29 STYLE 1
1
2
3
STRAIGHT LEAD
BULK PACK
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
BC
37x
AYWWG
G
x = 2 or 3 A = Assembly Location Y = Y ear WW = Work Week G = Pb−Free Package
(Note: Microdot may be in either location)
3
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1 Publication Order Number:
ORDERING INFORMATION
Device Package Shipping
BC372G TO−92
BC373RL1 TO−92 2000 / Tape & Reel
BC373RL1G TO−92
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD801 1/D.
(Pb−Free)
(Pb−Free)
5000 Units / Bulk
2000 / Tape & Reel
BC372/D
BC372, BC373
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(1)
(IC = 100 mAdc, IB = 0) BC372
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0) BC372
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(V
= 80 Vdc, IE = 0) BC372
CB
(V
= 60 Vdc, IE = 0) BC373
CB
Emitter Cutoff Current
(V
= 10 V, IC = 0)
EB
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
= 250 mAdc, VCE = 5.0 Vdc)
C
(IC = 100 mAdc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
(I
= 250 mAdc, IB = 0.25 mAdc)
C
Base−Emitter Saturation Voltage
(I
= 250 mAdc, IB = 0.25 mAdc)
C
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product
(I
= 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
C
Output Capacitance
(V
= 10 Vdc, IE = 0, f = 1.0 MHz)
CB
Noise Figure
= 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 kW, f = 1.0 kHz)
(I
C
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
BC373
BC373
Symbol Min Typ Max Unit
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
C
100
80
100
80
12 Vdc
100 100
100 nAdc
8.0 10
160
1.0 1.1 Vdc
1.4 2.0 Vdc
T
ob
100 200 MHz
10 25 pF
Vdc
Vdc
nAdc
NF 2.0 dB
K
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