ON Semiconductor BC368-D Service Manual
NPN − BC368; PNP − BC369
Amplifier Transistors
Voltage and Current are Negative for
PNP Transistors
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
Collector − Emitter Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
CEO
CES
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
20 Vdc
25 Vdc
5.0 Vdc
1.0 Adc
625
5.0
1.5
12
−55 to +150 °C
200 °C/W
83.3 °C/W
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 14
AYWWG
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1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAMS
BC36
8
G
369
AYWWG
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
BC
G
COLLECTOR
2
3
BASE
NPN PNP
1
EMITTER
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 6
COLLECTOR
2
3
BASE
1
EMITTER
1 Publication Order Number:
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
BC368G TO−92
BC368ZL1G TO−92
BC369ZL1G
(Pb−Free)
(Pb−Free)
TO−92
(Pb−Free)
5000 Units / Bulk
2000 / Ammo Pack
2000 / Ammo Pack
BC368/D
NPN − BC368; PNP − BC369
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
= 10 mA, IB = 0)
C
Collector−Base Breakdown Voltage
(IC = 100 mA, IE = 0 )
Emitter−Base Breakdown Voltage
= 100 mA, IC = 0)
(I
E
Collector Cutoff Current
(V
= 25 V, IE = 0)
CB
(VCB = 25 V, IE = 0, TJ = 150°C)
Emitter Cutoff Current
(V
= 5.0 V, IC = 0)
EB
ON CHARACTERISTICS
DC Current Gain
= 10 V, IC = 5.0 mA)
(V
CE
(VCE = 1.0 V, IC = 0.5 A) BC368, 369
= 1.0 V, IC = 1.0 A)
(V
CE
Bandwidth Product
(I
= 10 mA, VCE = 5.0 V, f = 20 MHz)
C
Collector−Emitter Saturation Voltage
(I
= 1.0 A, IB = 100 mA)
C
Base−Emitter On Voltage
(IC = 1.0 A, VCE = 1.0 V)
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
f
V
CE(sat)
V
BE(on)
FE
T
20 − − Vdc
25 − − Vdc
5.0 − − Vdc
−
−
− − 10
50
85
60
−
−
10
1.0
mAdc
mAdc
mAdc
−
−
−
−
375
−
65 − − MHz
− − 0.5 V
− − 1.0 V
−
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2
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