ON Semiconductor 2N6667, 2N6667G, 2N6668, 2N6668G Service Manual
2N6667, 2N6668
Darlington Silicon
Power Transistors
Designed for general-purpose amplifier and low speed switching
applications.
•High DC Current Gain -
hFE = 3500 (Typ) @ IC = 4.0 Adc
•Collector-Emitter Sustaining Voltage - @ 200 mAdc
V
CEO(sus)
•Low Collector-Emitter Saturation Voltage -
V
CE(sat)
•Monolithic Construction with Built-In Base-Emitter Shunt Resistors
•TO-220AB Compact Package
•Complementary to 2N6387, 2N6388
•Pb-Free Packages are Available*
= 60 Vdc (Min) - 2N6667
= 80 Vdc (Min) - 2N6668
= 2.0 Vdc (Max)@ IC = 5.0 Adc
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PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 A, 60-80 V, 65 W
MARKING
DIAGRAM
4
COLLECTOR
BASE
≈ 8 k ≈ 120
Figure 1. Darlington Schematic
EMITTER
STYLE 1:
PIN 1. BASE
2. COLLECTOR
1
2
3
CASE 221A-09
ORDERING INFORMATION
Device Package Shipping
2N6667 TO-220AB 50 Units/Rail
2N6667G TO-220AB
2N6668 TO-220AB 50 Units/Rail
2N6668G TO-220AB
3. EMITTER
4. COLLECTOR
TO-220AB
x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
(Pb-Free)
(Pb-Free)
2N666x
AYWWG
50 Units/Rail
50 Units/Rail
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 6
1 Publication Order Number:
2N6667/D
2N6667, 2N6668
MAXIMUM RATINGS (Note 1)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
- Peak
Base Current
Total Device Dissipation @ TC = 25_C
Derate above 25_C
Total Device Dissipation @ TA = 25_C
Derate above 25_C
Operating and Storage Junction Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
P
D
TJ, T
stg
2N6667
Symbol
R
q
JC
R
q
JA
60
60
5.0
250
0.52
2.0
0.016
–65 to +150
10
15
65
2N6668
80
80
Max
1.92
62.5
Unit
Vdc
Vdc
Vdc
Adc
mAdc
W
W/_C
W
W/_C
_C
Unit
_C/W
_C/W
ELECTRICAL CHARACTERISTICS (Note 1) (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 2) 2N6667
(IC = 200 mAdc, IB = 0) 2N6668
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) 2N6667
(VCE = 80 Vdc, IB = 0) 2N6668
Collector Cutoff Current
(VCE = 60 Vdc, V
(VCE = 80 Vdc, V
(VCE = 60 Vdc, V
(VCE = 80 Vdc, V
= 1.5 Vdc) 2N6667
EB(off)
) = 1.5 Vdc) 2N6668
EB(off
) = 1.5 Vdc, TC = 125_C) 2N6667
EB(off
= 1.5 Vdc, TC = 125_C) 2N6668
EB(off)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)
(IC = 10 Adc, VCE = 3.0 Vdc)
Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
Base-Emitter Saturation Voltage(IC = 5.0 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, f
= 1.0 MHz)
test
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
Symbol
V
CEO(sus)
I
CEO
I
CEX
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
|hfe|
C
ob
h
fe
Min
60
80
-
-
-
-
-
-
-
1000
100
-
-
-
-
20
-
1000
Max
-
-
1.0
1.0
300
300
3.0
3.0
5.0
20000
-
2.0
3.0
2.8
4.5
-
200
-
Unit
Vdc
mAdc
mAdc
mAdc
mAdc
-
Vdc
Vdc
-
pF
-
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