ON Semiconductor 2N5457 Datasheet
SEMICONDUCTOR TECHNICAL DATA
N–Channel — Depletion
GATE
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage V
Reverse Gate–Source Voltage V
Gate Current I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Junction Temperature Range T
Storage Channel Temperature Range T
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
DS
DG
GSR
G
P
D
J
stg
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –10 µAdc, VDS = 0)
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100°C)
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
Gate–Source Voltage
(VDS = 15 Vdc, ID = 100 mAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (1)
(VDS = 15 Vdc, VGS = 0)
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance Common Source (1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Admittance Common Source (1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
1. Pulse Test; Pulse Width v 630 ms, Duty Cycle v 10%.
25 Vdc
25 Vdc
–25 Vdc
10 mAdc
310
2.82
125 °C
–65 to +150 °C
Order this document
by 2N5457/D
1 DRAIN
*Motorola Preferred Device
3
2 SOURCE
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
mW
mW/°C
V
(BR)GSS
I
GSS
V
GS(off)
V
GS
I
DSS
yfs 1000 — 5000
yos — 10 50
C
iss
C
rss
–25 — — Vdc
—
—
–0.5 — –6.0 Vdc
— –2.5 — Vdc
1.0 3.0 5.0 mAdc
— 4.5 7.0 pF
— 1.5 3.0 pF
—
—
–1.0
–200
nAdc
m
mhos
m
mhos
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
2N5457
TYPICAL CHARACTERISTICS
5
4
3
2
NF, NOISE FIGURE (dB)
1
0
0.01
0.1 1.0 10
Figure 1. Noise Figure versus Frequency
1.2
V
^ –1.2 V
GS(off)
1.0
0.8
0.6
f, FREQUENCY (kHz)
VDS = 15 V
VGS = 0
RS = 1 M
VGS = 0 V
–0.2 V
–0.4 V
14
12
W
100
10
8
6
NF, NOISE FIGURE (dB)
4
2
0
0.001 0.01 0.1 1.0
RS, SOURCE RESISTANCE (Megohms)
VDS = 15 V
VGS = 0
f = 1 kHz
10
Figure 2. Noise Figure versus Source
Resistance
1.2
V
^ –1.2 V
GS(off)
1.0
0.8
VDS = 15 V
0.6
0.4
, DRAIN CURRENT (mA)
D
I
0.2
0
0 5 10 15 20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. T ypical Drain Characteristics
–0.6 V
–0.8 V
–1.0 V
25
0.4
, DRAIN CURRENT (mA)
D
I
0.2
0
–1.2
–0.8 –0.4 0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 4. Common Source Transfer
Characteristics
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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