OM6001ST
OM6002ST
OM6003ST
OM6004ST
OM6101ST
OM6102ST
POWER MOSFET IN HERMETIC ISOLATED
JEDEC TO-257AA PACKAGE
100V Thru 500V, Up To 14 Amp, N-Channel
MOSFET With Or Without Zener Gate
Clamp Protection
FEATURES
• Isolated Hermetic Metal Package
• Bi-Lateral Zener Gate Protection (Optional)
• Fast Switching, Low Drive Current
• Ease Of Paralleling For Added Power
• Low R
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener
clamps in the OM6101ST series.
DS(on)
OM6103ST
OM6104ST
MAXIMUM RATINGS
Note: OM6101ST thru OM6104ST is supplied with zener gate protection.
4 11 R4
Supersedes 1 07 R3
PART NUMBER V
DS
R
DS(on)
I
OM6001ST/OM6101ST 100 V .20 14 A
OM6002ST/OM6102ST 200 V .44 9 A
OM6003ST/OM6103ST 400 V 1.05 5.5 A
OM6004ST/OM6104ST 500 V 1.60 4.5 A
OM6001ST thru OM6004ST is supplied without zener gate protection.
SCHEMATIC
WITHOUT ZENER CLAMPS WITH ZENER CLAMPS
OM6001ST - 6004ST OM6101ST - 6104ST
1 - DRAIN
3 - GATE
ZENERS
2 - SOURCE
3.1 - 71
1 - DRAIN
3 - GATE
2 - SOURCE
D
3.1
3.1
G
D
S
G
D
S
OM6001ST - OM6104ST
ELECTRICAL CHARACTERISTICS: (T
= 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC= 25°C unless otherwise noted)
C
STATIC P/N OM6101ST / OM6001ST (100V) STATIC P/N OM6102ST / OM6002 ST (200V)
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BV
Drain-Source Breakdown
V
I
I
I
I
V
R
R
3.1 - 72
DSS
Voltage I
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV
GS(th)
Gate-Body Leakage (OM6101) ± 500 nA VGS= ± 12.8 V I
GSS
Gate-Body Leakage (OM6001) ± 100 nA VGS= ± 20 V I
GSS
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0 I
DSS
Current
On-State Drain Current
D(on)
Static Drain-Source On-State
DS(on)
DS(on)
DS(on)
1
Voltage
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
1
100 V
0.2 1.0 mA
14 A VDS 2 V
1.2 1.60 V V
0.20 V
0.40
DYNAMIC DYNAMIC
g
Forward Transductance
fs
C
Input Capacitance 750 pF VGS= 0 C
iss
C
Output Capacitance 250 pF VDS= 25 V C
oss
C
Reverse Transfer Capacitance 100 pF f = 1 MHz C
rss
t
Turn-On Delay Time 15 ns VDD= 30 V, ID@ 8 A t
d(on)
t
Rise Time 35 ns Rg= 7.5 W , VDS= 10 V t
r
t
Turn-Off Delay Time 38 ns t
d(off)
t
Fall Time 23 ns t
f
1
4.0 S(W ) VDS 2 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
Continuous Source Current
S
(Body Diode) symbol showing (Body Diode) symbol showing
I
SM
Source Current
1
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
V
Diode Forward Voltage
SD
t
Reverse Recovery Time
rr
1
1
1 Pulse Test: Pulse Width 300msec, Duty Cycle
- 14 A
- 56 A
- 2.5 V
- 2.5 V TC= 25 C, IS= -12 A, VGS= 0 VSDDiode Forward Voltage
100 ns
2%.
VGS= 0, BV
= 250 mA Voltage ID= 250 mA
D
V
= 0.8 Max. Rat., VGS= 0, Current
DS
T
= 125° C TC= 125° C
C
GS
GS
, VGS= 10 V I
DS(on)
= 10 V, ID= 8 A
= 10 V, ID= 8 A
VGS= 10 V, ID= 8 A, R
TC= 125 C Resistance
(W)
Modified MOSPOWER I
the integral P-N I
T
= 25 C, IS= -14 A, VGS= 0 VSDDiode Forward Voltage
C
, ID= 8 A g
DS(on)
TJ= 150 C, IF= IS,t
dl
/ds = 100 A/ms dlF/ds = 100 A/ms
F
1 Pulse Test: Pulse Width 300msec, Duty Cycle
Drain-Source Breakdown
DSS
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mA
GS(th)
Gate-Body Leakage (OM6102) ± 500 nA VGS= ± 12.8 V
GSS
Gate-Body Leakage (OM6002) ± 100 nA VGS= ± 20 V
GSS
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0
DSS
200 V
0.2 1.0 mA
On-State Drain Current
D(on)
V
Static Drain-Source On-State
DS(on)
R
DS(on)
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
S
SM
rr
1
Voltage
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
1
Forward Transductance
Input Capacitance 780 pF VGS= 0
Output Capacitance 150 pF VDS= 25 V
Reverse Transfer Capacitance 55 pF f = 1 MHz
Turn-On Delay Time 9 ns VDD= 75V, ID@ 5.0 A
Rise Time 18 ns Rg= 7.5 W , VGS=10 V
Turn-Off Delay Time 45 ns
Fall Time 27 ns
Continuous Source Current
Source Current
Reverse Recovery Time
1
9.0 A VDS 2 V
1.25 2.2 V V
0.44 V
0.88
1
3.0 5.8 S(W) VDS 2 V
(W)
- 9 A
1
1
1
- 36 A
- 2 V
- 2 V TC= 25 C, IS= -8 A, VGS= 0
250 ns
2%.
VGS= 0,
VDS= 0.8 Max. Rat., VGS= 0,
, VGS= 10 V
DS(on)
= 10 V, ID= 5.0 A
GS
= 10 V, ID= 5.0 A
GS
VGS= 10 V, ID= 5.0 A,
TC= 125 C
, ID= 5.0 A
DS(on)
Modified MOSPOWER
the integral P-N
T
= 25 C, IS= -9 A, VGS= 0
C
TJ= 150 C, IF= IS,
ELECTRICAL CHARACTERISTICS: (T
G
D
S
G
D
S
= 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC= 25°C unless otherwise noted)
C
STATIC P/N OM6103ST / OM6003ST (400V) STATIC P/N OM6104ST / OM6004ST (500V)
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BV
Drain-Source Breakdown
V
I
I
I
I
V
R
R
3.1 - 73
DSS
Voltage I
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV
GS(th)
Gate-Body Leakage (OM6103) ± 500 nA VGS= ± 12.8 V I
GSS
Gate-Body Leakage (OM6003) ± 100 nA VGS= ± 20 V I
GSS
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0 I
DSS
Current
On-State Drain Current
D(on)
Static Drain-Source On-State
DS(on)
DS(on)
DS(on)
1
Voltage
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
1
400 V
0.2 1.0 mA
5.5 A VDS 2 V
2.4 3.15 V V
1.05 V
2.0
DYNAMIC DYNAMIC
g
Forward Transductance
fs
C
Input Capacitance 700 pF VGS= 0 C
iss
C
Output Capacitance 70 pF VDS= 25 V C
oss
C
Reverse Transfer Capacitance 20 pF f = 1 MHz C
rss
t
Turn-On Delay Time 18 ns VDD= 175 V, ID@ 3.0 A t
d(on)
t
Rise Time 20 ns Rg= 10 W,VGS= 10 V t
r
t
Turn-Off Delay Time 40 ns t
d(off)
t
Fall Time 25 ns t
f
1
3.0 3.6 S(W ) VDS 2 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
Continuous Source Current
S
(Body Diode) symbol showing (Body Diode) symbol showing
I
SM
Source Current
1
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
V
Diode Forward Voltage
SD
t
Reverse Recovery Time
rr
1
1
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
- 5.5 A
- 22 A
- 1.6 V
- 2.5 V TC= 25 C, IS= -4.5 A, VGS= 0 VSDDiode Forward Voltage
470 ns
VGS= 0, BV
= 250 mA Voltage ID= 250 mA
D
V
= 0.8 Max. Rat., VGS= 0, Current
DS
T
= 125° C TC= 125° C
C
GS
GS
, VGS= 10 V I
DS(on)
= 10 V, ID= 3.0 A
= 10 V, ID= 3.0 A
VGS= 10 V, ID= 3.0 A, R
TC= 125 C Resistance
(W)
Modified MOSPOWER I
the integral P-N I
T
= 25 C, IS= -5.5 A, VGS= 0 VSDDiode Forward Voltage
C
, ID= 3.0 A g
DS(on)
TJ= 150 C, IF= IS,t
dl
/ds = 100 A/ms dlF/ds = 100 A/ms
F
Drain-Source Breakdown
DSS
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mA
GS(th)
Gate-Body Leakage (OM6104) ± 500 nA VGS= ± 12.8 V
GSS
Gate-Body Leakage (OM6004) ± 100 nA VGS= ± 20 V
GSS
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0
DSS
500 V
0.2 1.0 mA
On-State Drain Current
D(on)
V
Static Drain-Source On-State
DS(on)
R
DS(on)
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
S
SM
rr
1
Voltage
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
1
Forward Transductance
Input Capacitance 700 pF VGS= 0
Output Capacitance 90 pF VDS= 25 V
Reverse Transfer Capacitance 30 pF f = 1 MHz
Turn-On Delay Time 18 ns VDD= 225 V, ID@ 2.5 A
Rise Time 20 ns Rg= 7.5 W, VGS= 10 V
Turn-Off Delay Time 42 ns
Fall Time 25 ns
Continuous Source Current
Source Current
Reverse Recovery Time
1
4.5 A VDS 2 V
3.25 4.00 V V
1.6 V
2.9 3.3
1
2.5 2.8 S(W) VDS 2 V
(W)
- 4.5 A
1
1
1
- 18 A
- 1.4 V
- 2 V TC= 25 C, IS= -4 A, VGS= 0
430 ns
VGS= 0,
VDS= 0.8 Max. Rat., VGS= 0,
, VGS= 10 V
DS(on)
= 10 V, ID= 2.5 A
GS
= 10 V, ID= 2.5 A
GS
VGS= 10 V, ID= 2.5 A,
TC= 125 C
, ID= 2.5 A
DS(on)
Modified MOSPOWER
the integral P-N
T
= 25 C, IS= -4.5 A, VGS= 0
C
TJ= 150 C, IF= IS,
OM6001ST - OM6104ST
3.1
OM6001ST - OM6104ST
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
90
75
60
45
30
15
0
0 25 50 75 100 125 150 175
T
C
- CASE TEMPERATURE (C°)
P
D
- POWER DISSIPATION (WATTS)
RθJC = 2.5° C/W
.430
.410
.200
.190
.038 MAX.
.005
.120 TYP.
.537
.527
.665
.645
.420
.410
.150
.140
.750
.500
.100 TYP.
.035
.025
.045
.035
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)
V
DS
V
DGR
ID@ TC= 25°C Continuous Drain Current
ID@ TC= 100°C Continuous Drain Current
I
DM
PD@ TC= 25°C Maximum Power Dissipation 50 50 50 50 W
PD@ TC= 100°C Maximum Power Dissipation 20 20 20 20 W
Junction To Case Linear Derating Factor 0.4 0.4 0.4 0.4 W/°C
Junction To Ambient Linear Derating Factor .015 .015 .015 .015 W/°C
T
J
T
stg
Lead Temperature (1/16" from case for 10 secs.) 300 300 300 300 °C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitations = 16 amps
THERMAL RESISTANCE (MAXIMUM) at TA= 25°C
R
thJC
R
thJA
Parameter
OM6001ST OM6002ST OM6003ST OM6004ST
OM6101ST OM6102ST OM6103ST OM6104ST
Drain-Source Voltage 100 200 400 500 V
Drain-Gate Voltage (RGS= 1 M ) 100 200 400 500 V
Pulsed Drain Current
2
2
1
±14 ±9 ±5.5 ±4.5 A
±9 ±6 ±3.5 ±3 A
±56 ±36 ±22 ±18 A
Operating and
Storage Temperature Range -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Junction-to-Case 2.5 °C/W
Junction-to-Ambient 65 °C/W Free Air Operation
Units
3.1
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
POWER DERATING
MOD PAK
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
PACKAGE OPTIONS
Z-TAB
Please call the factory for more information.
MECHANICAL OUTLINE
WITH PIN CONNECTION
123
6 PIN SIP
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