3.1 - 37
3.1
400V Thru 1000V, N-Channel
Size 6 MOSFETs, High Energy Capability
4 11 R1
Supersedes 3 12 R0
POWER MOSFETS IN A TO-3 PACKAGE
FEATURES
• TO-3 Package Hermetic, .060 Dia. Leads
• Size 6 Die, High Energy
• Fast Switching, Low Drive Current
• Low R
DS(on)
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS
OM10N100NKOM360NK
OM460NK
PART NUMBER VDS(V) R
DS(on)
() ID(A)
OM360NK 400 .20 24
OM460NK 500 .25 22
OM10N100NK 1000 1.30 10
SCHEMATIC
Drain
Source
Gate
3.1 - 38
OM360NK - OM10N100NK
3.1
ELECTRICAL CHARACTERISTICS: OM360NK (T
C
= 25° unless otherwise noted)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS= 0, ID= 0.25 mA) V
(BR)DSS
400 - - Vdc
Zero Gate Voltage Drain I
DSS
mAdc
(VDS= 400 V, VGS= 0) - - 0.25
(VDS= 400 V, VGS= 0, TJ= 125° C) - - 1.0
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, VDS= 0) I
GSSF
- - 100 nAdc
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, VDS= 0) I
GSSR
- - 100 nAdc
ON CHARACTERISTICS*
Gate-Threshold Voltage V
GS(th)
Vdc
(VDS= VGS, ID= 0.25 mAdc) 2.0 3.0 4.0
(TJ= 125° C) 1.5 - 3.5
Static Drain-Source On-Resistance (VGS= 10 Vdc, ID= 12 Adc) R
DS(on)
- - 0.20 Ohm
Drain-Source On-Voltage (VGS= 10 Vdc) V
DS(on)
Vdc
(ID= 24 A) - - 5.4
(ID= 12 A, TJ= 125° C) - - 5.4
Forward Transconductance (V
DS
= 15 Vdc, ID= 12 Adc) g
FS
14 - - mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS= 25 V, VGS= 0, C
iss
- 4000 - pF
Output Capacitance f = 1.0 MHz) C
oss
- 550 -
Transfer Capacitance C
rss
- 110 -
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
d(on)
-30-ns
Rise Time (VDD= 200 V, ID= 24 A, t
r
-95-
Turn-Off Delay Time R
gen
= 4.3 ohms) t
d(off)
-80-
Fall Time t
f
-80-
Total Gate Charge (VDS= 320 V, ID= 24 A, Q
g
- 110 nC
Gate-Source Charge VGS= 10 V) Q
gs
-22-
Gate-Drain Charge Q
gd
-46-
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage V
SD
- 1.1 1.6 Vdc
Forward Turn-On Time (IS= 24 A, d/dt = 100 A/µs) t
on
-
**
-ns
Reverse Recovery Time t
rr
- 500 1000
ELECTRICAL CHARACTERISTICS: OM460NK (T
C
= 25° unless otherwise noted)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS= 0, ID= 0.25 mA) V
(BR)DSS
500 - - Vdc
Zero Gate Voltage Drain I
DSS
mAdc
(VDS= 500 V, VGS= 0) - - 0.25
(VDS= 500 V, VGS= 0, TJ= 125° C) - - 1.0
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, VDS= 0) I
GSSF
- - 100 nAdc
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, VDS= 0) I
GSSR
- - 100 nAdc
ON CHARACTERISTICS*
Gate-Threshold Voltage V
GS(th)
Vdc
(VDS= VGS, ID= 0.25 mAdc) 2.0 3.0 4.0
(TJ= 125° C) 1.5 - 3.5
Static Drain-Source On-Resistance (VGS= 10 Vdc, ID= 11 Adc) R
DS(on)
- - 0.25 Ohm
Drain-Source On-Voltage (VGS= 10 Vdc) V
DS(on)
Vdc
(ID= 22 A) - - 8.0
(ID= 11 A, TJ= 125° C) - - 8.0
Forward Transconductance (V
DS
= 15 Vdc, ID= 11 Adc) g
FS
11 - - mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS= 25 V, VGS= 0, C
iss
- 4000 - pF
Output Capacitance f = 1.0 MHz) C
oss
- 480 -
Transfer Capacitance C
rss
-95-
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
d(on)
-32-ns
Rise Time (VDD= 250 V, ID= 22 A, t
r
-95-
Turn-Off Delay Time R
gen
= 4.3 ohms) T
d(off)
-80-
Fall Time t
f
-80-
Total Gate Charge (VDS= 400 V, ID= 22 A, Q
g
- 115 - nC
Gate-Source Charge VGS= 10 V) Q
gs
-22-
Gate-Drain Charge Q
gd
-46-
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage V
SD
- 1.1 1.6 Vdc
Forward Turn-On Time (IS= 22 A, d/dt =100 A/µs) t
on
-
**
-ns
Reverse Recovery Time t
rr
- 500 1000
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%. ** Limited by circuit inductance
3.1 - 39
OM360NK - OM10N100NK
3.1
ELECTRICAL CHARACTERISTICS: OM10N100NK (T
C
= 25° unless otherwise noted)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS= 0, ID= 0.25 mA) V
(BR)DSS
1000 - - Vdc
Zero Gate Voltage Drain I
DSS
mAdc
(VDS= 1000 V, VGS= 0) - - 0.25
(VDS= 1000 V, VGS= 0, TJ= 125° C) - - 1.0
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, VDS= 0) I
GSSF
- - 100 nAdc
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, VDS= 0) I
GSSR
- - 100 nAdc
ON CHARACTERISTICS*
Gate-Threshold Voltage V
GS(th)
Vdc
(VDS= VGS, ID= 0.25 mAdc) 2.0 3.0 4.5
(TJ= 125° C) 1.5 - 4.0
Static Drain-Source On-Resistance (VGS= 10 Vdc, ID= 5 Adc) R
DS(on)
- - 1.3 Ohm
Drain-Source On-Voltage (VGS= 10 Vdc) V
DS(on)
- Vdc
(ID= 10 A) --14
(ID= 5 A, TJ= 125° C) - - 14
Forward Transconductance (VDS= 15 Vdc, ID= 5 Adc) g
FS
5.0 - - mhos
DYNAMIC CHARACTERISTICS-
Input Capacitance (VDS= 25 V, VGS= 0, C
iss
- 3900 - pF
Output Capacitance f = 1.0 MHz) C
oss
- 300 -
Transfer Capacitance C
rss
-65-
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
d(on)
-40-ns
Rise Time (VDD= 500 V, ID= 10 A, t
r
-60-
Turn-Off Delay Time R
gen
= 9.1 ohms) t
d(off)
- 100 -
Fall Time t
f
-70-
Total Gate Charge (VDS= 500 V, ID= 10 A, Q
g
- 100 - nC
Gate-Source Charge VGS= 10 V) Q
gs
-20-
Gate-Drain Charge Q
gd
-40-
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage V
SD
- - 1.1 Vdc
Forward Turn-On Time (IS= 10 A, d/dt = 100 A/µs) t
on
**
ns
Reverse Recovery Time t
rr
- 600 1000
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
OM360NK - OM10N100NK
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)
Parameter OM360NK OM460NK OM10N100NK Units
V
DS
Drain-Source Voltage 400 500 1000 V
V
DGR
Drain-Gate Voltage (RGS= 1 M ) 400 500 1000 V
ID@ TC= 25°C Continuous Drain Current 24 22 10 A
I
DM
Pulsed Drain Current 92 85 40 A
PD@ TC= 25°C Maximum Power Dissipation 200 200 200 W
Derate Above 25°C TC 1.33 1.33 1.33 W/°C
W
DSS
(1) Single Pulse Energy
Drain To Source @ 25°C 1000 1200 1000 mJ
T
J
Operating and
T
stg
Storage Temperature Range -55 to 150 -55 to 150 -55 to 150 °C
Lead Temperature (1/8" from case for 5 secs.) 275 275 275 °C
Note 1: VDD= 50V, ID= as noted
THERMAL RESISTANCE (Maximum) at TA= 25°C
R
thJC
Junction-to-Case .75 °C/W
R
thJA
Junction-to-Ambient 30 °C/W Free Air Operation
Derate above 25°C T
A
.033 W/°C
MECHANICAL OUTLINE
1.197
1.177
0.675
0.655
0.188 R.
MAX.
0.440
0.420
0.161
0.151
0.525 R.
MAX.
0.225
0.205
SEATING
PLANE
0.312
MIN.
0.450
0.250
0.063
0.058
2 PLCS.
0.135
MAX.
0.875
MAX.
1.53
REF.
Pin Connection
Pin 1: Gate
Pin 2: Source
Case: Drain
1
2
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