NXP 74HC595BQ, 74HC595D, 74HC595DB, 74HC595N, 74HC595PW Schematics

...
74HC595; 74HCT595
8-bit serial-in, serial or parallel-out shift register with output latches; 3-state
Rev. 6 — 12 December 2011 Product data sheet

1. General description

The 74HC595; 74HCT595 are high-speed Si-gate CMOS device s and ar e pin co mpatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7A.
The 74HC595; 74HCT595 are 8-stage serial shift registers with a storage register and 3-state outputs. The registers have separate clocks.
Data is shifted on the positive-going transitions of the shift register clock input (SHCP). The data in each register is transferred to the storage register on a positive-going transition of the storage register clock input (STCP). If both clocks are connected together, the shift register will always be one clock pulse ahead of the storage register.
The shift register has a serial input (DS) and a serial standard output (Q7S) for cascading. It is also provided with asynchronous reset ( active LOW) for all 8 shif t register st ages. The storage register has 8 parallel 3-state bus driver output s. Data in the storage register appears at the output whenever the output enable input (OE

2. Features and benefits

8-bit serial input
8-bit serial or parallel outputStorage register with 3-state outputsShift register with direct clear100 MHz (typical) shift out frequencyESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 VMultiple package optionsSpecified from 40 C to +85 C and from 40 C to +125 C

3. Applications

Serial-to-parallel data conversion
Remote control holding register
) is LOW.
NXP Semiconductors
mna554
3-STATE OUTPUTS
8-BIT STORAGE REGISTER
8-STAGE SHIFT REGISTER
Q
0
Q1 Q2 Q3 Q4 Q5 Q6 Q7
Q7S
14
151234567
9
D
S
SHCP
STCP
OE
11 10
12
13
MR

4. Ordering information

74HC595; 74HCT595
8-bit serial-in, serial or parallel-out shift register with output latches;
3-state
Table 1. Ordering information
Type number Package
Temperature range Name Description Version
74HC595N 40 C to +125 C DIP16 plastic dual in-line package; 16 leads (300 mil) SOT38-4 74HCT595N 74HC595D 40 C to +125 C SO16 plastic small outline package; 16 leads; 74HCT595D
body width 3.9 mm
74HC595DB 40 C to +125 C SSOP16 plastic shrink small outline package; 16 leads; 74HCT595DB
body width 5.3 mm
74HC595PW 40 C to +125 C TSSOP16 plastic thin shrink small outline package; 16 leads; 74HCT595PW
body width 4.4 mm
74HC595BQ 40C to +125 C DHVQFN16 plastic dual in-line compatible thermal enhanced 74HCT595BQ
very thin quad flat package; no leads; 16 terminals; body 2.5 3.5 0.85 mm
SOT109-1
SOT338-1
SOT403-1
SOT763-1

5. Functional diagram

Fig 1. Functional diagram
74HC_HCT595 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 12 December 2011 2 of 24
NXP Semiconductors
OEMR
9
15
1 2 3 4 5 6 7
1310
14
11 12
mna552
Q1
Q0
Q2 Q3 Q4 Q5 Q6 Q7
Q7S
D
S
STCP
SHCP
mna553
15
9
1 2 3 4 5 6 7
1D 2D
C1/
10 11
14
C2
12
13
EN3
SRG8
R
3
STAGE 0 STAGES 1 TO 6 STAGE 7
FF0
DCPQ
R
LATCH
DCPQ
FF7
DCPQ
R
LATCH
DCPQ
mna555
DQ
Q
1 Q2 Q3 Q4 Q5 Q6 Q7
Q7S
Q
0
DS
STCP
SHCP
OE
MR
74HC595; 74HCT595
8-bit serial-in, serial or parallel-out shift register with output latches;
Fig 2. Logic symbol Fig 3. IEC logic symbol
3-state
Fig 4. Logic diagram
74HC_HCT595 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 12 December 2011 3 of 24
NXP Semiconductors
74HC595
74HCT595
Q1 V
CC
Q2 Q0
Q3 DS
Q4 OE
Q5 STCP
Q6 SHCP
Q7 MR
GND Q7S
001aao241
1
2
3
4
5
6
7
8
10
9
12
11
14
13
16
15
74HC595
74HCT595
Q1 V
CC
Q2 Q0 Q3 DS Q4 OE Q5 STCP Q6 SHCP Q7 MR
GND Q7S
001aao242
1 2 3 4 5 6 7 8
10
9
12 11
14 13
16 15

6. Pinning information

6.1 Pinning

74HC595; 74HCT595
8-bit serial-in, serial or parallel-out shift register with output latches;
3-state
Fig 5. Pin configuration DIP16, SO16 Fig 6. Pin configuration SSOP16, TSSOP16
74HC595
74HCT595
terminal 1
index area
2 15
Q2 Q0
3 14
Q3 DS
4
Q4 OE
5 12
Q5 STCP
6 11
Q6 SHCP
7 10
Q7 MR
Transparent top view
Q1 1
GND
8
GND
CC
V 16
13
(1)
9
001aao243
Q7S
(1) This is not a supply pin, the substrate is attached to this pad using conductive die attach material. There is no electrical or
mechanical requirement to solder this pad however if it is soldered the solder land should remain floating or be connected to GND.
Fig 7. Pin configuration for DHVQFN16
74HC_HCT595 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 12 December 2011 4 of 24
NXP Semiconductors
8-bit serial-in, serial or parallel-out shift register with output latches;

6.2 Pin description

Table 2. Pin description
Symbol Pin Description
Q1 1 parallel data output 1 Q2 2 parallel data output 2 Q3 3 parallel data output 3 Q4 4 parallel data output 4 Q5 5 parallel data output 5 Q6 6 parallel data output 6 Q7 7 parallel data output 7 GND 8 ground (0 V) Q7S 9 serial data output MR SHCP 11 shift register clock input STCP 12 storage register clock input OE DS 14 serial data input Q0 15 parallel data output 0 V
CC
10 master reset (active LOW)
13 output enable input (active LOW)
16 supply voltage
74HC595; 74HCT595
3-state

7. Functional description

Table 3. Function table
Control Input Output Function SHCP STCP OE MR DS Q7S Qn
X X L L X L NC a LOW-level on MR X L L X L L empty shift register loaded into storage register X X H L X L Z shift register clear; parallel outputs in high-impedance OFF-state X L H H Q6S NC logic HIGH-level shifted into shift register stage 0. Contents of all
X L H X NC QnS contents of shift register stages (internal QnS) are transferred to
L H X Q6S QnS contents of shift register shifted throug h ; pre vi o us contents of the
[1] H = HIGH voltage state;
L = LOW voltage state; = LOW-to-HIGH transition; X = don’t care; NC = no change; Z = high-impedance OFF-state.
[1]
only affects the shift registers
shift register stages shifted through, e.g. previous state of stage 6 (internal Q6S) appears on the serial output (Q7S).
the storage register and parallel output stages
shift register is transferred to the storage register and the parallel output stages
74HC_HCT595 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 12 December 2011 5 of 24
NXP Semiconductors
SHCP
DS
STCP
MR
OE
Q0
74HC595; 74HCT595
8-bit serial-in, serial or parallel-out shift register with output latches;
3-state
Z-state
Q1
Q6
Q7
Q7S
Z-state
Z-state
Z-state
mna556
Fig 8. Timing diagram

8. Limiting values

Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V I
IK
I
OK
I
O
I
CC
I
GND
T P
CC
stg
tot
supply voltage 0.5 +7 V input clamping current VI < 0.5 V or VI>VCC+ 0.5 V - 20 mA output clamping current VO< 0.5 V or VO > VCC + 0.5 V - 20 mA output current VO= 0.5 V to (VCC+0.5V)
supply current - 70 mA ground current 70 - mA storage temperature 65 +150 C total power dissipation
DIP16 package SO16 package SSOP16 package TSSOP16 package DHVQFN16 package
pin Q7S - 25 mA pins Qn - 35 mA
[1]
- 750 mW
[2]
- 500 mW
[3]
- 500 mW
[3]
- 500 mW
[4]
- 500 mW
[1] For DIP16 package: P [2] For SO16 package: P [3] For SSOP16 and TSSOP16 packages: P [4] For DHVQFN16 package: P
74HC_HCT595 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 12 December 2011 6 of 24
derates linearly with 12 mW/K above 70 C.
tot
derates linearly with 8 mW/K above 70 C.
tot
derates linearly with 5.5 mW/K above 60 C.
tot
derates linearly with 4.5 mW/K above 60 C.
tot
NXP Semiconductors
8-bit serial-in, serial or parallel-out shift register with output latches;

9. Recommended operating conditions

74HC595; 74HCT595
3-state
Table 5. Recommended operating conditions
Symbol Parameter Conditions 74HC595 74HCT595 Unit
Min Typ Max Min Typ Max
V
CC
V
I
V
O
t/V input transition rise and
T
amb
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V input voltage 0 - V output voltage 0 - V
= 2.0 V - - 625 - - - ns/V
V
fall rate
CC
= 4.5 V - 1.67 139 - 1.67 139 ns/V
V
CC
= 6.0 V - - 83 - - - ns/V
V
CC
CC CC
0-VCCV 0-VCCV
ambient temperature 40 +25 +125 40 +25 +125 C

10. Static characteristics

Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
74HC595
V
IH
HIGH-level input voltage
V
IL
LOW-level input voltage
V
OH
HIGH-level output voltage
Min Typ Max Min Max
VCC= 2.0 V 1.5 1.2 - 1.5 - V
V
= 4.5 V 3.15 2.4 - 3.15 - V
CC
= 6.0 V 4.2 3.2 - 4.2 - V
V
CC
VCC= 2.0 V - 0.8 0.5 - 0.5 V
= 4.5 V - 2.1 1.35 - 1.35 V
V
CC
= 6.0 V - 2.8 1.8 - 1.8 V
V
CC
VI=VIHor V
IL
all outputs
= 20 A; VCC= 2.0 V 1.9 2.0 - 1.9 - V
I
O
= 20 A; VCC= 4.5 V 4.4 4.5 - 4.4 - V
I
O
= 20 A; VCC= 6.0 V 5.9 6.0 - 5.9 - V
I
O
Q7S output
= 4mA; VCC= 4.5 V 3.84 4.32 - 3.7 - V
I
O
= 5.2 mA; VCC= 6.0 V 5.34 5.81 - 5.2 - V
I
O
Qn bus driver outputs
= 6mA; VCC= 4.5 V 3.84 4.32 - 3.7 - V
I
O
= 7.8 mA; VCC= 6.0 V 5.34 5.81 - 5.2 - V
I
O
74HC_HCT595 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 12 December 2011 7 of 24
NXP Semiconductors
74HC595; 74HCT595
8-bit serial-in, serial or parallel-out shift register with output latches;
3-state
Table 6. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
V
OL
LOW-level output voltage
VI=VIHor V
IL
all outputs
=20A; VCC= 2.0 V - 0 0.1 - 0.1 V
I
O
=20A; VCC= 4.5 V - 0 0.1 - 0.1 V
I
O
=20A; VCC= 6.0 V - 0 0.1 - 0.1 V
I
O
Q7S output
=4mA; VCC= 4.5 V - 0.15 0.33 - 0.4 V
I
O
=5.2mA; VCC= 6.0 V - 0.16 0.33 - 0.4 V
I
O
Qn bus driver outputs
=6mA; VCC= 4.5 V - 0.15 0.33 - 0.4 V
I
O
=7.8mA; VCC= 6.0 V - 0.16 0.33 - 0.4 V
I
O
I
I
input leakage
VI=VCCor GND; VCC=6.0V - - 1.0 - 1.0 A
current
I
OZ
OFF-state output current
I
CC
C
I
supply current VI=VCCor GND; IO=0A;
input
VI=VIHor VIL; VCC=6.0V;
VO=VCCor GND
=6.0V
V
CC
--5.0 - 10 A
- - 80 - 160 A
-3.5- - -pF
capacitance
74HCT595
V
IH
HIGH-level
VCC= 4.5 V to 5.5 V 2.0 1.6 - 2.0 - V
input voltage
V
IL
LOW-level
VCC= 4.5 V to 5.5 V - 1.2 0.8 - 0.8 V
input voltage
V
OH
HIGH-level output voltage
VI=VIHor VIL; VCC=4.5V
all outputs
= 20 A 4.4 4.5 - 4.4 - V
I
O
Q7S output
= 4 mA 3.84 4.32 - 3.7 - V
I
O
Qn bus driver outputs
= 6 mA 3.7 4.32 - 3.7 - V
I
O
V
OL
LOW-level output voltage
VI=VIHor VIL; VCC=4.5V
all outputs
=20A - 0 0.1 - 0.1 V
I
O
Q7S output
= 4.0 mA - 0.15 0.33 - 0.4 V
I
O
Qn bus driver outputs
= 6.0 mA - 0.16 0.33 - 0.4 V
I
O
I
I
input leakage
VI=VCCor GND; VCC=5.5V - - 1.0 - 1.0 A
current
74HC_HCT595 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 12 December 2011 8 of 24
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