NXP 74HC1G08GV, 74HC1G08GW, 74HCT1G08GV, 74HCT1G08GW Schematic [ru]
74HC1G08; 74HCT1G08
2-input AND gate
Rev. 04 — 17 July 2007 Product data sheet
1. General description
74HC1G08 and 74HCT1G08 are high-speed, Si-gate CMOS devices. They provide a
2-input AND function.
The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.
The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
The standard output currents are half those of the 74HC08 and 74HCT08.
2. Features
n Symmetrical output impedance
n High noise immunity
n Low power dissipation
n Balanced propagation delays
n SOT353-1 and SOT753 package options
3. Ordering information
Table 1. Ordering information
Type number Package
Temperature range Name Description Version
74HC1G08GW −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package; 5 leads;
74HCT1G08GW
74HC1G08GV −40 °C to +125 °C SC-74A plastic surface-mounted package; 5 leads SOT753
74HCT1G08GV
body width 1.25 mm
SOT353-1
4. Marking
Table 2. Marking codes
Type number Marking
74HC1G08GW HE
74HCT1G08GW TE
74HC1G08GV H08
74HCT1G08GV T08
NXP Semiconductors
5. Functional diagram
74HC1G08; 74HCT1G08
2-input AND gate
1
B
2
A
mna113
4
Y
1
2
Fig 1. Logic symbol Fig 2. IEC logic symbol
B
Y
A
mna115
Fig 3. Logic diagram
6. Pinning information
6.1 Pinning
74HC1G08
74HCT1G08
1
BV
5
CC
&
mna114
4
2
A
3
GND Y
001aaf102
Fig 4. Pin configuration
6.2 Pin description
Table 3. Pin description
Symbol Pin Description
B 1 data input
A 2 data input
GND 3 ground (0 V)
Y 4 data output
V
CC
5 supply voltage
4
74HC_HCT1G08_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 17 July 2007 2 of 11
NXP Semiconductors
74HC1G08; 74HCT1G08
2-input AND gate
7. Functional description
Table 4. Function table
H = HIGH voltage level; L= LOW voltage level
Input Output
A B Y
LLL
LHL
HLL
HHH
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] Above 55 °C the value of P
supply voltage −0.5 +7.0 V
input clamping current VI < −0.5 V or VI>VCC+ 0.5 V - ±20 mA
output clamping current VO< −0.5 V or VO>VCC+ 0.5 V - ±20 mA
output current −0.5 V < VO <VCC+ 0.5 V - ±12.5 mA
supply current - 25 mA
ground current −25 - mA
storage temperature −65 +150 °C
total power dissipation T
derates linearly with 2.5 mW/K.
tot
= −40 °C to +125 °C
amb
[2]
- 200 mW
9. Recommended operating conditions
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 74HC1G08 74HCT1G08 Unit
Min Typ Max Min Typ Max
V
CC
V
I
V
O
T
amb
∆t/∆V input transition rise
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
input voltage 0 - V
output voltage 0 - V
CC
CC
0-VCCV
0-VCCV
ambient temperature −40 +25 +125 −40 +25 +125 °C
= 2.0 V - - 625 - - - ns/V
V
and fall rate
CC
= 4.5 V - - 139 - - 139 ns/V
V
CC
= 6.0 V - - 83 - - - ns/V
V
CC
[1]
74HC_HCT1G08_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 17 July 2007 3 of 11
NXP Semiconductors
74HC1G08; 74HCT1G08
2-input AND gate
10. Static characteristics
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
For type 74HC1G08
V
IH
HIGH-level input
voltage
V
IL
LOW-level input
voltage
V
OH
HIGH-level output
voltage
V
OL
LOW-level output
voltage
I
I
I
CC
C
I
input leakage current VI=VCCor GND; VCC= 6.0 V - - 1.0 - 1.0 µA
supply current VI=VCCor GND; IO=0A;
input capacitance - 1.5 - - - pF
VCC= 2.0 V 1.5 1.2 - 1.5 - V
= 4.5 V 3.15 2.4 - 3.15 - V
V
CC
= 6.0 V 4.2 3.2 - 4.2 - V
V
CC
VCC= 2.0 V - 0.8 0.5 - 0.5 V
= 4.5 V - 2.1 1.35 - 1.35 V
V
CC
= 6.0 V - 2.8 1.8 - 1.8 V
V
CC
VI= VIH or V
IL
IO= −20 µA; VCC= 2.0 V 1.9 2.0 - 1.9 - V
= −20 µA; VCC= 4.5 V 4.4 4.5 - 4.4 - V
I
O
= −20 µA; VCC= 6.0 V 5.9 6.0 - 5.9 - V
I
O
= −2.0 mA; VCC= 4.5 V 4.13 4.32 - 3.7 - V
I
O
= −2.6 mA; VCC= 6.0 V 5.63 5.81 - 5.2 - V
I
O
VI= VIH or V
IL
IO= 20 µA; VCC= 2.0 V - 0 0.1 - 0.1 V
= 20 µA; VCC= 4.5 V - 0 0.1 - 0.1 V
I
O
= 20 µA; VCC= 6.0 V - 0 0.1 - 0.1 V
I
O
= 2.0 mA; VCC= 4.5 V - 0.15 0.33 - 0.4 V
I
O
= 2.6 mA; VCC= 6.0 V - 0.16 0.33 - 0.4 V
I
O
- - 10 - 20 µA
V
= 6.0 V
CC
For type 74HCT1G08
V
IH
HIGH-level input
VCC= 4.5 V to 5.5 V 2.0 1.6 - 2.0 - V
voltage
V
IL
LOW-level input
VCC= 4.5 V to 5.5 V - 1.2 0.8 - 0.8 V
voltage
V
OH
HIGH-level output
voltage
V
OL
LOW-level output
voltage
I
I
input leakage current VI=VCCor GND; VCC= 5.5 V - - 1.0 - 1.0 µA
VI= VIH or V
IL
IO= −20 µA; VCC= 4.5 V 4.4 4.5 - 4.4 - V
= −2.0 mA; VCC= 4.5 V 4.13 4.32 - 3.7 - V
I
O
VI= VIH or V
IL
IO= 20 µA; VCC= 4.5 V - 0 0.1 - 0.1 V
= 2.0 mA; VCC= 4.5 V - 0.15 0.33 - 0.4 V
I
O
amb
=25°C.
74HC_HCT1G08_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 17 July 2007 4 of 11
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