NTE56004 thru NTE56010
TRIAC, 15 Amp
The NTE56004 thru NTE56010 series of TRIACs are designed primarily for full–wave AC control applications, such as solid–state relays, motor controls, heating controls and power supplies; or wherever full–wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
Features:
DBlocking Voltage from 200 to 800 Volts
DAll Diffused and Glass Passivated Junctions
DSmall, Rugged, TO220 package for Low Thermal Resistance, High Heat Dissipation and Durability
DGate Triggering specified in Four Quadrants
Absolute Maximum Ratings: |
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Peak Repetitive Off–State Voltage, (TJ = –40° to 125° C), VDRM |
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NTE56004 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . 200V |
NTE56006 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . 400V |
NTE56008 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . 600V |
NTE56010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . 800V |
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . 10V |
On–State Current RMS (Full Cycle Sine Wave 50 to 60Hz,TC = +90° C), IT(RMS) . . |
. . . . . . . . . 15A |
Circuit Fusing (t = 8.3ms) I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . 93A2s |
Peak Surge Current (One Full Cycle, 60Hz, TC = +80° C), ITSM |
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Preceded and followed by rated current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . 150A |
Peak Gate Power (TC = +80° C, Pulse Width = 2 s), PGM . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . 20W |
Average Gate Power (TC = +80° C, t = 8.3ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . 500mW |
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . 2A |
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
–40° to +125° C |
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
–40° to +150° C |
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . 2° C/W |
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