NTE NTE5487, NTE5486, NTE5485, NTE5482, NTE5481 Datasheet

NTE5480 thru NTE5487 Silicon Controlled Rectifier (SCR)

8 Amp

Description:

The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V.

Features:

D Uniform Low–Level Noise–Immune Gate Triggering: IGT = 10mA Typ @ TC = +25° C

D Low Forward “ON” Voltage: v = 1V Typ @ 5A @ +25° C

T

DHigh Surge–Current Capability: ITSM = 100A Peak

DShorted Emitter Construction

Absolute Maximum Ratings: (TJ = –40° to +100° C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM or VRRM	25V
NTE5480 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5481 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . 50V
NTE5482 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . 100V
NTE5483 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . 200V
NTE5484 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . 300V
NTE5485 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . 400V
NTE5486 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . 500V
NTE5487 (This device is discontinued) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . 600V
Forward Current RMS, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . 8A
Peak Forward Surge Current (One Cycle, 60Hz, TJ = –40° to +100° C, ITSM . . . . . . .	. . . . . . . . 100A
Circuit Fusing (t ≤ 8.3ms, TJ = –40° to +100° C), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . 40A2s
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . 5W
Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . 0.5W
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . 2A
Peak Gate Voltage (Note 2), VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . 10V
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	–40° to +100° C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	–40° to +150° C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . 1.5° C/W
Typical Thermal Resistance, Case–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . 50° C/W

Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage applied exceeds the rated blocking voltage.

Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a negative potential applied to the anode.