NSC LMC662MWC, LMC662CM, LMC662AIN, LMC662AIMX, LMC662AIM Datasheet

LMC662
CMOS Dual Operational Amplifier

General Description

The LMC662 CMOS Dual operational amplifier is ideal for
operation from a single supply.Itoperatesfrom+5Vto+15V
and features rail-to-rail output swing in addition to an input
common-mode range that includes ground. Performance
limitations that have plagued CMOS amplifiers in the past
are not a problem with this design. Input V

OS

, drift, and
broadband noise as well as voltage gain into realistic loads
(2 kΩ and 600Ω) are all equal to or better than widely ac­cepted bipolar equivalents.

This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.

See the LMC660 datasheet for a Quad CMOS operational
amplifier with these same features.

Features

n Rail-to-rail output swing
n Specified for 2 kΩ and 600Ω loads
n High voltage gain: 126 dB
n Low input offset voltage: 3 mV
n Low offset voltage drift: 1.3 µV/˚C

n Ultra low input bias current: 2 fA
n Input common-mode range includes V

−

n Operating range from +5V to +15V supply
n I

SS

=

400 µA/amplifier; independent of V+

n Low distortion: 0.01%at 10 kHz
n Slew rate: 1.1 V/µs
n Available in extended temperature range (−40˚C to

+125˚C); ideal for automotive applications

n Available to a Standard Military Drawing specification

Applications

n High-impedance buffer or preamplifier
n Precision current-to-voltage converter
n Long-term integrator
n Sample-and-hold circuit
n Peak detector
n Medical instrumentation
n Industrial controls
n Automotive sensors

Connection Diagram

Ordering Information

Package Temperature Range NSC

Drawing

Transport

Media

Military Extended Industrial Commercial

8-Pin LMC662AMJ/883 J08A Rail
Ceramic DIP
8-Pin LMC662EM LMC662AIM LMC662CM M08A Rail,
Small Outline Tape and Reel
8-Pin LMC662EN LMC662AIN LMC662CN N08E Rail
Molded DIP
8-Pin
Side Brazed LMC662AMD D08C Rail
Ceramic DIP

8-Pin DIP/SO

DS009763-1

April 1998

LMC662 CMOS Dual Operational Amplifier

© 1999 National Semiconductor Corporation DS009763 www.national.com

Absolute Maximum Ratings (Note 3)

If Military/Aerospace specified devices are required,
please contact theNationalSemiconductor Sales Office/
Distributors for availability and specifications.

Differential Input Voltage

±

Supply Voltage

Supply Voltage (V

+−V−

) 16V

Output Short Circuit to V

+

(Note 12)

Output Short Circuit to V

−

(Note 1)

Lead Temperature

(Soldering, 10 sec.) 260˚C
Storage Temp. Range −65˚C to +150˚C
Voltage at Input/Output Pins (V

+

) +0.3V, (V−) −0.3V

Current at Output Pin

±

18 mA

Current at Input Pin

±

5mA
Current at Power Supply Pin 35 mA
Power Dissipation (Note 2)
Junction Temperature 150˚C

ESD Tolerance (Note 8) 1000V

Operating Ratings(Note 3)

Temperature Range

LMC662AMJ/883,
LMC662AMD −55˚C ≤ T

J

≤ +125˚C

LMC662AI −40˚C ≤ T

J

≤ +85˚C

LMC662C 0˚C ≤ T

J

≤ +70˚C

LMC662E −40˚C ≤ T

J

≤ +125˚C
Supply Voltage Range 4.75V to 15.5V
Power Dissipation (Note 10)
Thermal Resistance (θ

JA

) (Note 11)
8-Pin Ceramic DIP 100˚C/W
8-Pin Molded DIP 101˚C/W
8-Pin SO 165˚C/W
8-Pin Side Brazed Ceramic DIP 100˚C/W

DC Electrical Characteristics

Unless otherwise specified, all limits guaranteed for T

J

=

25˚C. Boldface limits apply at the temperature extremes. V

+

=

5V,

V

−

=

0V, V

CM

=

1.5V, V

O

=

2.5V and R

L

>

1M unless otherwise specified.

Parameter Conditions Typ

(Note 4)

LMC662AMJ/883 LMC662AI LMC662C LMC662E Units

LMC662AMD

Limit Limit Limit Limit

(Notes 4, 9) (Note 4) (Note 4) (Note 4)

Input Offset Voltage 1 3 3 6 6 mV

3.5 3.3 6.3 6.5 max
Input Offset Voltage 1.3 µV/˚C
Average Drift
Input Bias Current 0.002 20 pA

100 4 2 60 max

Input Offset Current 0.001 20 pA

100 2 1 60 max

Input Resistance

>

1 TeraΩ

Common Mode 0V ≤ V

CM

≤ 12.0V 83 70 70 63 63 dB

Rejection Ratio V

+

=

15V 68 68 62 60 min

Positive Power Supply 5V ≤ V

+

≤ 15V 83 70 70 63 63 dB

Rejection Ratio V

O

=

2.5V 68 68 62 60 min

Negative Power Supply 0V ≤ V

−

≤ −10V 94 84 84 74 74 dB
Rejection Ratio 82 83 73 70 min
Input Common-Mode V

+

=

5V & 15V −0.4 −0.1 −0.1 −0.1 −0.1 V

Voltage Range For CMRR ≥ 50 dB 0 000max

V

+

− 1.9 V+− 2.3 V+− 2.3 V+− 2.3 V+− 2.3 V

V

+

− 2.6 V+− 2.5 V+− 2.4 V+− 2.6 min

Large Signal R

L

=

2kΩ(Note 5) 2000 400 440 300 200 V/mV

Voltage Gain Sourcing 300 400 200 100 min

Sinking 500 180 180 90 90 V/mV

70 120 80 40 min

R

L

=

600Ω (Note 5) 1000 200 220 150 100 V/mV
Sourcing 150 200 100 75 min
Sinking

250

100 100 50 50 V/mV

35 60 40 20 min

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DC Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for T

J

=

25˚C. Boldface limits apply at the temperature extremes. V

+

=

5V,

V

−

=

0V, V

CM

=

1.5V, V

O

=

2.5V and R

L

>

1M unless otherwise specified.

Parameter Conditions Typ

(Note 4)

LMC662AMJ/883 LMC662AI LMC662C LMC662E Units

LMC662AMD

Limit Limit Limit Limit

(Notes 4, 9) (Note 4) (Note 4) (Note 4)

Output Swing V

+

=

5V 4.87 4.82 4.82 4.78 4.78 V

R

L

=

2kΩto V

+

/2 4.77 4.79 4.76 4.70 min

0.10 0.15 0.15 0.19 0.19 V

0.19 0.17 0.21 0.25 max

V

+

=

5V 4.61 4.41 4.41 4.27 4.27 V

R

L

=

600Ω to V

+

/2 4.24 4.31 4.21 4.10 min

0.30 0.50 0.50 0.63 0.63 V

0.63 0.56 0.69 0.75 max

V

+

=

15V 14.63 14.50 14.50 14.37 14.37 V

R

L

=

2kΩto V

+

/2 14.40 14.44 14.32 14.25 min

0.26 0.35 0.35 0.44 0.44 V

0.43 0.40 0.48 0.55 max

V

+

=

15V 13.90 13.35 13.35 12.92 12.92 V

R

L

=

600Ω to V

+

/2 13.02 13.15 12.76 12.60 min

0.79 1.16 1.16 1.45 1.45 V

1.42 1.32 1.58 1.75 max

Output Current Sourcing, V

O

=

0V 22 16 16 13 13 mA

V

+

=

5V 12 14 11 9 min

Sinking, V

O

=

5V 21 16 16 13 13 mA

12 14 11 9 min

Output Current Sourcing, V

O

=

0V 40 19 28 23 23 mA

V

+

=

15V 19 25 21 15 min

Sinking, V

O

=

13V 39 19 28 23 23 mA

(Note 12) 19 24 20 15 min

Supply Current Both Amplifiers 0.75 1.3 1.3 1.6 1.6 mA

V

O

=

1.5V 1.8 1.5 1.8 1.9 max

AC Electrical Characteristics

Unless otherwise specified, all limits guaranteed for T

J

=

25˚C. Boldface limits apply at the temperature extremes. V

+

=

5V,

V

−

=

0V, V

CM

=

1.5V, V

O

=

2.5V and R

L

>

1M unless otherwise specified.

Parameter Conditions Typ

(Note

4)

LMC662AMJ/883 LMC662AI LMC662C LMC662E Units

LMC662AMD

Limit Limit Limit Limit

(Notes 4, 9) (Note 4) (Note 4) (Note 4)

Slew Rate (Note 6) 1.1 0.8 0.8 0.8 0.8 V/µs

0.5 0.6 0.7 0.4 min
Gain-Bandwidth Product 1.4 MHz
Phase Margin 50 Deg
Gain Margin 17 dB
Amp-to-Amp Isolation (Note 7) 130 dB
Input-Referred Voltage Noise F=1 kHz 22

Input-Referred Current Noise F=1 kHz 0.0002

Total Harmonic Distortion F=10 kHz, A

V

=

−10
%

R

L

=

2kΩ,V

O

=

8V

PP

0.01

V

+

=

15V

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AC Electrical Characteristics (Continued)

Note 1: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts

can result in exceeding the maximum allowed junction temperature of 150˚C. Output currents in excess of

±

30 mA over long term may adversely affect reliability.

Note 2: The maximum power dissipation is a function of T

J(max)

, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is P

D

=

(T

J(max)–TA

)/θJA.

Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is in­tended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.

Note 4: Typical values represent the most likely parametric norm. Limits are guaranteed by testing or correlation.
Note 5: V

+

=

15V, V

CM

=

7.5V and R

L

connected to 7.5V. For Sourcing tests, 7.5V ≤ VO≤ 11.5V. For Sinking tests, 2.5V ≤ VO≤ 7.5V.

Note 6: V

+

=

15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.

Note 7: Input referred. V

+

=

15V and R

L

=

10 kΩ connected to V

+

/2. Each amp excited in turn with 1 kHz to produce V

O

=

13 V

PP

.

Note 8: Human body model, 1.5 kΩ in series with 100 pF.
Note 9: A military RETS electrical test specification is available on request. At the time of printing, the LMC662AMJ/883 RETS spec complied fully with the boldface

limits in this column. The LMC662AMJ/883 may also be procured to a Standard Military Drawing specification.
Note 10: For operating at elevated temperatures the device must be derated based on the thermal resistance θ

JA

with P

D

=

(T

J–TA

)/θJA.

Note 11: All numbers apply for packages soldered directly into a PC board.
Note 12: Do not connect output to V

+

when V+is greater than 13V or reliability may be adversely affected.

Typical Performance Characteristics V

S

=

±

7.5V, T

A

=

25˚C unless otherwise specified

Supply Current vs
Supply Voltage

DS009763-24

Offset Voltage

DS009763-25

Input Bias Current

DS009763-26

Output Characteristics
Current Sinking

DS009763-27

Output Characteristics
Current Sourcing

DS009763-28

Input Voltage Noise
vs Frequency

DS009763-29

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