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LMC660CN
Datasheet
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NSC LMC660CN, LMC660CM, LMC660AMJ-883, LMC660AIN, LMC660AIMX Datasheet

...
LMC660 CMOS Quad Operational Amplifier
General Description
The LMC660 CMOS Quad operational amplifier is ideal for operation froma single supply.It operatesfrom +5Vto +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input V broadband noise as well as voltage gain into realistic loads (2 kΩ and 600Ω) are all equal to or better than widely ac­cepted bipolar equivalents.
This chip is built with National’s advanced Double-Poly Silicon-Gate CMOS process.
See the LMC662 datasheet for a dual CMOS operational amplifier with these same features.
, drift, and
Features
n Rail-to-rail output swing n Specified for 2 kΩ and 600Ω loads n High voltage gain: 126 dB n Low input offset voltage: 3 mV n Low offset voltage drift: 1.3 µV/˚C
n Ultra low input bias current: 2 fA n Input common-mode range includes V n Operating range from +5V to +15V supply
=
n I
SS
n Low distortion: 0.01%at 10 kHz n Slew rate: 1.1 V/µs n Available in extended temperature range (−40˚C to
+125˚C); ideal for automotive applications
n Available to Standard Military Drawing specification
Applications
n High-impedance buffer or preamplifier n Precision current-to-voltage converter n Long-term integrator n Sample-and-Hold circuit n Peak detector n Medical instrumentation n Industrial controls n Automotive sensors
375 µA/amplifier; independent of V
LMC660 CMOS Quad Operational Amplifier
April 1998
−
+
Connection Diagram
14-Pin DIP/SO
DS008767-1
© 1999 National Semiconductor Corporation DS008767 www.national.com
Ordering Information
Package Temperature Range NSC
Military Extended Industrial Commercial
−55˚C to +125˚C −40˚C +125˚C −40˚C to +85˚C 0˚C to +70˚C
14-Pin LMC660AMJ/883 J14A Rail Ceramic DIP 14-Pin LMC660EM LMC660AIM LMC660CM M14A Rail Small Outline Tape and Reel 14-Pin LMC660EN LMC660AIN LMC660CN N14A Rail Molded DIP 14-Pin Side Brazed LMC660AMD D14E Rail Ceramic DIP
Drawing
Transport
Media
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Absolute Maximum Ratings (Note 3)
If Military/Aerospace specified devices are required, please contact theNational Semiconductor Sales Office/ Distributors for availability and specifications.
Differential Input Voltage Supply Voltage 16V Output Short Circuit to V Output Short Circuit to V
+
−
Lead Temperature
(Soldering, 10 sec.) 260˚C Storage Temp. Range −65˚C to +150˚C Voltage at Input/Output Pins (V Current at Output Pin Current at Input Pin Current at Power Supply Pin 35 mA Power Dissipation (Note 2)
±
Supply Voltage
(Note 12)
(Note 1)
+
) + 0.3V, (V−) − 0.3V
±
18 mA
±
5mA
Operating Ratings
Temperature Range
LMC660AMJ/883, LMC660AMD −55˚C ≤ T LMC660AI −40˚C ≤ T LMC660C 0˚C ≤ T
LMC660E −40˚C ≤ T Supply Voltage Range 4.75V to 15.5V Power Dissipation (Note 10)
Thermal Resistance (θ
) (Note 11)
JA
14-Pin Ceramic DIP 90˚C/W
14-Pin Molded DIP 85˚C/W
14-Pin SO 115˚C/W
14-Pin Side Brazed
Ceramic DIP 90˚C/W
≤ +125˚C
J
≤ +85˚C
J
≤ +70˚C
J
≤ +125˚C
J
Junction Temperature 150˚C ESD tolerance (Note 8) 1000V
DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T =
0V, V
=
1.5V, V
CM
=
O
2.5V and R
>
1M unless otherwise specified.
L
Parameter Conditions Typ
(Note 4)
=
25˚C. Boldface limits apply at the temperature extremes. V
J
LMC660AMD LMC660AI LMC660C LMC660E Units
LMC660AMJ/883
+
=
5V, V
Limit Limit Limit Limit
(Notes 4, 9) (Note 4) (Note 4) (Note 4)
Input Offset Voltage 1 3 3 6 6 mV
3.5 3.3 6.3 6.5 max Input Offset Voltage 1.3 µV/˚C Average Drift Input Bias Current 0.002 20 pA
100 4 2 60 max
Input Offset Current 0.001 20 pA
100 2 1 60 max Input Resistance Common Mode 0V ≤ V
+
Rejection Ratio V
= Positive Power Supply 5V ≤ V Rejection Ratio V
=
O
Negative Power Supply 0V ≤ V
≤ 12.0V 83 70 70 63 63 dB
CM
15V 68 68 62 60 min
+
≤ 15V 83 70 70 63 63 dB
2.5V 68 68 62 60 min
−
≤ −10V 94 84 84 74 74 dB
>
1 TeraΩ
Rejection Ratio 82 83 73 70 min
+
Input Common-Mode V
=
5V & 15V −0.4 −0.1 −0.1 −0.1 −0.1 V
Voltage Range For CMRR ≥ 50 dB 0 000max
+
V
Large Signal R
− 1.9 V+− 2.3 V+− 2.3 V+− 2.3 V+− 2.3 V
=
2kΩ(Note 5) 2000 400 440 300 200 V/mV
L
+
V
− 2.6 V+− 2.5 V+− 2.4 V+− 2.6 min
Voltage Gain Sourcing 300 400 200 100 min
Sinking 500 180 180 90 90 V/mV
70 120 80 40 min
=
R
600Ω (Note 5) 1000 200 220 150 100 V/mV
L
Sourcing 150 200 100 75 min Sinking 250 100 100 50 50 V/mV
35 60 40 20 min
−
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DC Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for T =
0V, V
=
CM
1.5V, V
=
2.5V and R
O
>
1M unless otherwise specified.
L
Parameter Conditions Typ
=
25˚C. Boldface limits apply at the temperature extremes. V
J
(Note 4)
LMC660AMD LMC660AI LMC660C LMC660E Units
LMC660AMJ/883
Limit Limit Limit Limit
(Notes 4, 9) (Note 4) (Note 4) (Note 4)
+
=
Output Swing V
5V 4.87 4.82 4.82 4.78 4.78 V
R
L
=
2kΩto V
+
/2 4.77 4.79 4.76 4.70 min
0.10 0.15 0.15 0.19 0.19 V
0.19 0.17 0.21 0.25 max
+
=
V
5V 4.61 4.41 4.41 4.27 4.27 V
=
R
600Ω to V
L
+
/2 4.24 4.31 4.21 4.10 min
0.30 0.50 0.50 0.63 0.63 V
0.63 0.56 0.69 0.75 max
+
=
V
15V 14.63 14.50 14.50 14.37 14.37 V
=
R
2kΩto V
L
+
/2 14.40 14.44 14.32 14.25 min
0.26 0.35 0.35 0.44 0.44 V
0.43 0.40 0.48 0.55 max
+
=
V
15V 13.90 13.35 13.35 12.92 12.92 V
=
R
600Ω to V
L
+
/2 13.02 13.15 12.76 12.60 min
0.79 1.16 1.16 1.45 1.45 V
1.42 1.32 1.58 1.75 max
Output Current Sourcing, V
+
=
V
5V 12 14 11 9 min
Sinking, V
=
0V 22 16 16 13 13 mA
O
=
5V 21 16 16 13 13 mA
O
12 14 11 9 min
Output Current Sourcing, V
+
=
V
15V 19 25 21 15 min
Sinking, V
=
0V 40 19 28 23 23 mA
O
=
13V 39 19 28 23 23 mA
O
(Note 12) 19 24 20 15 min
Supply Current All Four Amplifiers 1.5 2.2 2.2 2.7 2.7 mA
=
V
1.5V 2.9 2.6 2.9 3.0 max
O
+
=
5V, V
−
AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T =
0V, V
=
CM
1.5V, V
=
2.5V and R
O
>
L
Parameter Conditions Typ
1M unless otherwise specified.
(Note 4)
=
25˚C. Boldface limits apply at the temperature extremes. V
J
LMC660AMD LMC660AI LMC660C LMC660E Units
LMC660AMJ/883
+
=
5V, V
Limit Limit Limit Limit
(Notes 4, 9) (Note 4) (Note 4) (Note 4)
Slew Rate (Note 6) 1.1 0.8 0.8 0.8 0.8 V/µs
0.5 0.6 0.7 0.4 min Gain-Bandwidth Product 1.4 0.5 MHz Phase Margin 50 Deg Gain Margin 17 dB Amp-to-Amp Isolation (Note 7) 130 dB Input Referred Voltage Noise F=1 kHz 22
Input Referred Current Noise F=1 kHz 0.0002
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−
AC Electrical Characteristics (Continued)
+
=
5V, V
=
D
(Note 4)
=
25˚C. Boldface limits apply at the temperature extremes. V
J
LMC660AMD LMC660AI LMC660C LMC660E Units
LMC660AMJ/883
Unless otherwise specified, all limits guaranteed for T =
0V, V
=
1.5V, V
CM
=
O
2.5V and R
>
1M unless otherwise specified.
L
Parameter Conditions Typ
Limit Limit Limit Limit
(Notes 4, 9) (Note 4) (Note 4) (Note 4)
Total Harmonic Distortion F=10 kHz,
=
−10
A
V
=
2kΩ,
R
L
=
8V
V
O +
=
V
15V
Note 1: Applies to both singlesupply and split supply operation. Continuous shortcircuit operation at elevated ambient temperature and/ormultiple Op Amp shorts can result in exceeding the maximum allowed junction temperature of 150˚C. Output currents in excess of
Note 2: Themaximum power dissipation is a function of T
−TA)/θJA. Note 3: Absolute Maximum Ratings indicatelimits beyond which damage to the devicemay occur. Operating Ratingsindicate conditions for whichthe device is in-
tended to be functional, butdo not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed.
Note 4: Typical values represent the most likely parametric norm. Limits are guaranteed by testing or correlation.
+
=
Note 5: V
+
=
Note 6: V Note 7: Input referred. V Note 8: Human body model, 1.5 kΩ in series with 100 pF. Note 9: AmilitaryRETS electrical test specification is availableon request.At the time of printing,theLMC660AMJ/883 RETS spec complied fully withthe boldface
limits in this column. The LMC660AMJ/883 may also be procured to a Standard Military Drawing specification.
Note 10: For operating at elevated temperatures the device must be derated based on the thermal resistance θ Note 11: All numbers apply for packages soldered directly into a PC board. Note 12: Do not connect output to V
=
15V, V 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
CM
7.5V and R
+
=
connected to 7.5V. For Sourcing tests, 7.5V ≤ VO≤ 11.5V. For Sinking tests, 2.5V ≤ VO≤ 7.5V.
L
15V and R
=
10 kΩ connected to V
L
+
when V+is greater than 13V or reliability may be adversely affected.
0.01
PP
±
, θJA, and TA. The maximum allowable power dissipation atanyambienttemperatureis P
J(max)
+
/2. Each amp excited in turn with 1 kHz to produce V
30 mA over long term may adversely affect reliability.
=
.
13 V
O
PP
=
with P
JA
D
(T
J−TA
)/θJA.
(T
−
%
J(max)
Typical Performance Characteristics V
Supply Current vs Supply Voltage
DS008767-24
Output Characteristics Current Sinking
DS008767-27
Offset Voltage
Output Characteristics Current Sourcing
=
±
S
7.5V, T
=
25˚C unless otherwise specified
A
Input Bias Current
DS008767-25
DS008767-26
Input Voltage Noise vs Frequency
DS008767-28
DS008767-29
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