NSC CLC5622IN, CLC5622IMX, CLC5622IM Datasheet

Features

■

130mA output current

■

0.05%, 0.03° differential gain, phase

■

3.0mA/ch supply current

■

160MHz bandwidth (Av= +2)

■

-90/-97dBc HD2/HD3 (1MHz)

■

18ns settling to 0.05%

■

370V/µs slew rate

■

Stable for capacitive loads up to 1000pf

■

Single 5V or ±5V supplies

Applications

■

Video line driver

■

ADSL/HDSL driver

■

Coaxial cable driver

■

UTP differential line driver

■

Transformer/coil driver

■

High capacitive load driver

■

Portable/battery-powered applications

■

Differential A/D driver

Typical Application

Differential Line Driver with Load Impedance Conversion

Pinout

DIP & SOIC

General Description

The National CLC5622 has a new output stage that delivers high
output drive current (130mA), but consumes minimal
quiescent supply current (3.0mA/ch) from a single 5V supply. Its
current feedback architecture, fabricated in an advanced comple­mentary bipolar process, maintains consistent performance over
a wide range of gains and signal levels, and has a linear-phase
response up to one half of the -3dB frequency.

The CLC5622 offers 0.1dB gain flatness to 30MHz and differen­tial gain and phase errors of 0.05% and 0.03°. These features are
ideal for professional and consumer video applications.

The CLC5622 offers superior dynamic performance with a
160MHz small-signal bandwidth, 370V/µs slew rate and 4.4ns
rise/fall times (2V

step

). The combination of low quiescent power,
high output current drive, and high-speed performance make
the CLC5622 well suited for many battery-powered personal
communication/computing systems.

The ability to drive low-impedance, highly capacitive loads,
makes the CLC5622 ideal for single ended cable applications.
It also drives low impedance loads with minimum distortion.
The CLC5622 will drive a 100Ω load with only -95/-95dBc
second/third harmonic distortion (Av= +2, V

out

= 2Vpp, f = 1MHz).

With a 25Ω load, and the same conditions, it produces only -72/

-77dBc second/third harmonic distortion.
The CLC5622 can also be used for driving differential-input step-

up transformers for applications such as Asynchronous Digital
Subscriber Lines (ADSL) or High-Bit-Rate Digital Subscriber
Lines (HDSL).

When driving the input of high-resolution A/D converters, the
CLC5622 provides excellent -90/-97dBc second/third harmonic
distortion (Av= +2, V

out

= 2Vpp, f = 1MHz, RL= 1kΩ) and fast

settling time.

CLC5622
Dual, High Output,Video Amplifier

N

June 1999

CLC5622

Dual, High Output, Video Amplifier

© 1999 National Semiconductor Corporation http://www.national.com

Printed in the U.S.A.

Maximum Output Voltage vs. R

10

9

)

8

pp

7
6
5
4
3

Output Voltage (V

2
1

10

VCC = ±5V

Vs = +5V

100

RL (Ω)

L

1000

R

g2

V

V

in

+

CLC5622

R

t1

-

R

g1

d/2

1/2

R

f1

R

t2

R

-

1/2

CLC5622

+

f2

Vo1

V

1

V

non-inv

-V

inv

1

CC

-V

d/2

R

m/2

1:n

R

eq

R

m/2

Z

UTP

o

I

o

+

R

V

L

o

-

+V
Vo2
V

inv

V

non-inv

CC

2

2

http://www.national.com 2

PARAMETERS CONDITIONS TYP MIN/MAX RATINGS UNITS NOTES
Ambient Temperature CLC5622IN/IM +25°C +25°C 0 to 70°C -40 to 85°C

FREQUENCY DOMAIN RESPONSE

-3dB bandwidth V

o

= 0.5V

pp

130 100 90 85 MHz

V

o

= 2.0V

pp

95 80 77 75 MHz

-

0.1dB bandwidth Vo= 0.5V

pp

30 25 20 20 MHz

gain peaking <200MHz, V

o

= 0.5V

pp

0 0.5 0.9 1.3 dB

gain rolloff <30MHz, V

o

= 0.5V

pp

0.1 0.4 0.6 0.6 dB

linear phase deviation <30MHz, V

o

= 0.5V

pp

0.15 0.3 0.4 0.4 deg

differential gain NTSC, R

L

= 150Ω to -1V 0.03 – – – %

differential phase NTSC, R

L

= 150Ω to -1V 0.07 – – – deg

TIME DOMAIN RESPONSE

rise and fall time 2V step 4.5 6.0 6.4 6.8 ns
settling time to 0.05% 1V step 17 25 40 60 ns
overshoot 2V step 11 15 18 18 %
slew rate 2V step 280 195 165 150 V/µs

DISTORTION AND NOISE RESPONSE

2

nd

harmonic distortion 2Vpp, 1MHz -79 -76 -73 -73 dBc

2V

pp

, 1MHz; RL= 1kΩ -80 -78 -75 -75 dBc

2V

pp

, 5MHz -66 -60 -58 -58 dBc

3

rd

harmonic distortion 2Vpp, 1MHz -85 -82 -79 -79 dBc

2V

pp

, 1MHz; RL= 1kΩ -83 -81 -78 -78 dBc

2V

pp

, 5MHz -65 -62 -60 -60 dBc

equivalent input noise

voltage (e

ni

) >1MHz 3.4 4.4 4.9 4.9 nV/√Hz

non-inverting current (i

bn

) >1MHz 6.3 8.2 9.0 9.0 pA/√Hz

inverting current (i

bi

) >1MHz 8.7 11.3 12.4 12.4 pA/√Hz

crosstalk (input referred) 10MHz, 1V

pp

-72 – – – dB

STATIC DC PERFORMANCE

input offset voltage 1 4 6 6 mV A

average drift 8 – – – µV/˚C

input bias current (non-inverting) 6 18 22 24 µAA

average drift 40 – – – nA/˚C

input bias current (inverting) 6 14 16 17 µAA

average drift 25 – – – nA/˚C
power supply rejection ratio DC 48 45 43 43 dB
common-mode rejection ratio DC 47 45 43 43 dB
supply current per channel R

L

= ∞ 3.0 3.4 3.6 3.6 mA A

MISCELLANEOUS PERFORMANCE

input resistance (non-inverting) 0.36 0.26 0.23 0.23 MΩ
input capacitance (non-inverting) 1.8 2.75 2.75 2.75 pF
input voltage range, High 4.2 4.1 4.1 4.0 V
input voltage range, Low 0.8 0.9 0.9 1.0 V
output voltage range, High R

L

= 100Ω 4.0 3.9 3.9 3.8 V

output voltage range, Low R

L

= 100Ω 1.0 1.1 1.1 1.2 V

output voltage range, High R

L

= ∞ 4.1 4.0 4.0 3.9 V

output voltage range, Low R

L

= ∞ 0.9 1.0 1.0 1.1 V
output current 100 80 65 40 mA B
output resistance, closed loop DC 70 105 105 140 mΩ

Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.

+5V Electrical Characteristics

(Av= +2, Rf= 750Ω,RL= 100Ω,Vs= +5V1,Vcm= VEE+ (Vs/2), RLtied to Vcm, unless specified)

Absolute Maximum Ratings

supply voltage (VCC- VEE)

+

14V
output current (see note C) 140mA
common-mode input voltage

VEEto

V

CC

maximum junction temperature +150°C
storage temperature range -65°C to +150°C
lead temperature (soldering 10 sec) +300°C
ESD rating (human body model) 1000V

Notes

A) J-level:spec is 100% tested at +25°C.
B)The short circuit current can exceed the maximum safe

output current.

1) V

s

= VCC- V

EE

Reliability Information

Transistor Count 98
MTBF (based on limited test data) 300Mhr

3 http://www.national.com

PARAMETERS CONDITIONS TYP GUARANTEED MIN/MAX UNITS NOTES
Ambient Temperature CLC5622IN/IM +25°C +25°C 0 to 70°C -40 to 85°C

FREQUENCY DOMAIN RESPONSE

-3dB bandwidth V

o

= 1.0V

pp

160 135 120 115 MHz

V

o

= 4.0V

pp

75 60 57 55 MHz

-

0.1dB bandwidth Vo= 1.0V

pp

30 25 20 20 MHz

gain peaking <200MHz, V

o

= 1.0V

pp

0 0.5 0.9 1.3 dB

gain rolloff <30MHz, V

o

= 1.0V

pp

0.1 0.2 0.3 0.3 dB

linear phase deviation <30MHz, V

o

= 1.0V

pp

0.15 0.3 0.4 0.4 deg

differential gain NTSC, R

L

=150Ω 0.05 0.1 – – %

differential phase NTSC, R

L

=150Ω 0.03 0.06 – – deg

TIME DOMAIN RESPONSE

rise and fall time 2V step 4.4 5.8 6.2 6.8 ns
settling time to 0.05% 2V step 18 25 40 60 ns
overshoot 2V step 19 21 23 24 %
slew rate 2V step 370 280 260 240 V/µs

DISTORTION AND NOISE RESPONSE

2

nd

harmonic distortion 2Vpp, 1MHz -95 -88 -85 -85 dBc

2V

pp

, 1MHz; RL= 1kΩ -90 -88 -85 -85 dBc

2V

pp

, 5MHz -74 -66 -64 -64 dBc

3

rd

harmonic distortion 2Vpp, 1MHz -95 -91 -88 -88 dBc

2V

pp

, 1MHz; RL= 1kΩ -97 -93 -90 -90 dBc

2V

pp

, 5MHz -73 -64 -62 -62 dBc

equivalent input noise

voltage (e

ni

) >1MHz 3.4 4.4 4.9 4.9 nV/√Hz

non-inverting current (i

bn

) >1MHz 6.3 8.2 9.0 9.0 pA/√Hz

inverting current (i

bi

) >1MHz 8.7 11.3 12.4 12.4 pA/√Hz

crosstalk (input referred) 10MHz, 1V

pp

-72 – – – dB

STATIC DC PERFORMANCE

input offset voltage 1 6 7 8 mV

average drift 10 – – – µV/˚C

input bias current (non-inverting) 8 18 23 25 µA

average drift 40 – – – nA/˚C

input bias current (inverting) 9 24 28 28 µA

average drift 30 – – – nA/˚C
power supply rejection ratio DC 48 45 43 43 dB
common-mode rejection ratio DC 48 46 44 44 dB
supply current (per channel) R

L

= ∞ 3.2 3.8 4.0 4.0 mA

MISCELLANEOUS PERFORMANCE

input resistance (non-inverting) 0.48 0.34 0.31 0.31 MΩ
input capacitance (non-inverting) 1.45 2.15 2.15 2.15 pF
common-mode input range

±

4.2

±

4.1

±

4.1

±

4.0 V

output voltage range R

L

= 100Ω

±

3.8

±

3.6

±

3.6

±

3.5 V

output voltage range R

L

= ∞

±

4.0

±

3.8

±

3.8

±

3.7 V
output current 130 100 80 50 mA B
output resistance, closed loop DC 60 90 90 120 mΩ

±5V Electrical Characteristics

(Av= +2, Rf= 750Ω,RL= 100Ω,VCC= ±5V, unless specified)

Notes

B)The short circuit current can exceed the maximum safe

output current.

Ordering Information

Model Temperature Range Description

CLC5622IN -40°C to +85°C 8-pin PDIP
CLC5622IM -40°C to +85°C 8-pin SOIC
CLC5622IMX -40°C to +85°C 8-pin SOIC tape and reel

Pac kage Thermal Resistance

Package

θθ

JC

θθ

JA

Plastic (IN) 65°C/W 130°C/W
Surface Mount (IM) 50°C/W 145°C/W

http://www.national.com 4

+5V T ypical Performance

(Av= +2, Rf= 750Ω,RL= 100Ω,Vs= +5V1,Vcm= VEE+ (Vs/2), RLtied to Vcm, unless specified)

Non-Inverting Frequency Response

Vo = 0.5V

pp

Gain

Av = +1

Rf = 1.2kΩ

Phase

Av = +5

Rf = 402Ω

Av = +10

10M

Rf = 200Ω

100M

Normalized Magnitude (1dB/div)

1M

Frequency (Hz)

Frequency Response vs. V

Vo = 1V

Vo = 2V

o

pp

pp

Magnitude (1dB/div)

1M

10M

100M

Frequency (Hz)

PSRR & CMRR

60

PSRR

50

CMRR

40

30

20

PSRR & CMRR (dB)

10

0

1k 10k 100M

100k 1M 10M

Frequency (Hz)

2nd & 3rd Harmonic Distortion, RL = 25Ω

-40

-45

-50

-55

-60

3rd, 10MHz

2nd, 10MHz

-65

Distortion (dBc)

-70

-75

-80

2nd, 1MHz

3rd, 1MHz

0 0.5 1 1.5 2 2.5

Output Amplitude (Vpp)

Large & Small Signal Pulse Response

Large Signal

Small Signal

Output Voltage (0.5V/div)

Time (10ns/div)

Av = +2

Rf = 649Ω

Vo = 0.1V

pp

Phase (deg)

0

-90

-180

-270

-360

-450

Inverting Frequency Response

Vo = 0.5V

pp

Gain

Av = -2

Rf = 649Ω

Phase

Av = -5

Rf = 402Ω

Av = -10

10M

Rf = 200Ω

100M

Normalized Magnitude (1dB/div)

1M

Frequency (Hz)

Gain Flatness & Linear Phase

Gain

Phase

Magnitude (0.1dB/div)

0

10

20

Frequency (MHz)

Equivalent Input Noise

3.6

3.5

3.4

3.3

Inverting Current 10.8pA/√Hz

Non-Inverting Current 7.6pA/√Hz

3.2

3.1

Noise Voltage (nV/√Hz)

3.0
10k 100k 1M 10M

Voltage 3.1nV/√Hz

Frequency (Hz)

2nd & 3rd Harmonic Distortion, RL = 100Ω

-50

3rd, 10MHz

-60

-70

2nd, 10MHz

-80

Distortion (dBc)

-90

2nd, 1MHz

3rd, 1MHz

-100
0 0.5 1 1.5 2 2.5

Output Amplitude (Vpp)

Output Impedance vs. Frequency

50

40

30

20

10

Output Impedance (Ω)

0

10k 100k 1M 10M

1k

Frequency (Hz)

Av = -1

Rf = 1kΩ

100M

180
135
90
45
0

-45

0.3

0.2

0.1

0

-0.1

30

15

11

7

3

Phase (deg)

Frequency Response vs. R

Vo = 0.5V

pp

Gain

Phase

RL = 25Ω

RL = 1kΩ

L

Phase (deg)

RL = 100Ω

0

-90

-180

Magnitude (1dB/div)

-270

-360

-450

1M

10M

100M

Frequency (Hz)

Open Loop Transimpedance Gain, Z(s)

120

Gain

100

Phase (deg)

Phase

80

60

Magnitude (dBΩ)

40

20

10k 100k 1M 10M 100M

220

180

Phase (deg)

140

100

60

20

Frequency (Hz)

2nd & 3rd Harmonic Distortion

-60

Vo = 2V

2nd

RL = 1kΩ

pp

3rd

RL = 100Ω

2nd

RL = 100Ω

3rd

RL = 1kΩ

Noise Current (pA/√Hz)

Distortion (dBc)

-70

-80

-90

-100
1M

10M

Frequency (Hz)

2nd & 3rd Harmonic Distortion, RL = 1kΩ

-50

-60

-70

3rd, 10MHz

2nd, 10MHz

-80

-90

-100

Distortion (dBc)

-110

2nd, 1MHz

3rd, 1MHz

-120

0 0.5 1 1.5 2 2.5

Output Amplitude (Vpp)

IBI, IBN, VIO vs. Temperature

-1.5 4

I

1.0 3

(mV)

IO

0.5 2

BI

I

BI

, I

V

IO

BN

(µA)

01

I

-0.5 0

Offset Voltage V

-1

BN

-1

-60 -20 20 60 100 140

Temperature (°C)