NSC CLC5612IN, CLC5612IMX, CLC5612IM Datasheet

Features

■

130mA output current

■

0.15%, 0.02° differential gain, phase

■

1.5mA/ch supply current

■

90MHz bandwidth (Av= +2)

■

-87/-93dBc HD2/HD3 (1MHz)

■

17ns settling to 0.05%

■

290V/µs slew rate

■

Stable for capacitive loads up to 1000pf

■

Single 5V to ±5V supplies

Applications

■

Video line driver

■

Coaxial cable driver

■

Twisted pair driver

■

Transformer/coil driver

■

High capacitive load driver

■

Portable/battery-powered applications

■

A/D driver

Typical Application

Differential Line Driver with Load Impedance Conversion

Pinout

DIP & SOIC

General Description

The CLC5612 is a dual, low-cost, high-speed (90MHz) buffer
which features user-programmable gains of +2, +1, and

-1V/V. The CLC5612 also has a new output stage that delivers
high output drive current (130mA), but consumes minimal
quiescent supply current (1.5mA/ch) from a single 5V supply. Its
current feedback architecture, fabricated in an advanced comple­mentary bipolar process, maintains consistent performance over
a wide range of gains and signal levels, and has a linear-phase
response up to one half of the -3dB frequency.

The CLC5612 offers 0.1dB gain flatness to 18MHz and differen­tial gain and phase errors of 0.15% and 0.02°. These features are
ideal for professional and consumer video applications.

The CLC5612 offers superior dynamic performance with a
90MHz small-signal bandwidth, 290V/µs slew rate and 6.2ns
rise/fall times (2V

step

). The combination of low quiescent power,
high output current drive, and high-speed performance make
the CLC5612 well suited for many battery-powered personal
communication/computing systems.

The ability to drive low-impedance, highly capacitive loads,
makes the CLC5612 ideal for single ended cable applications.
It also drives low impedance loads with minimum distortion.
The CLC5612 will drive a 100Ω load with only -74/-86dBc
second/third harmonic distortion (Av= +2, V

out

= 2Vpp, f = 1MHz).

With a 25Ω load, and the same conditions, it produces only -70/

-67dBc second/third harmonic distortion. It is also optimized for
driving high currents into single-ended transformers and coils.

When driving the input of high-resolution A/D converters, the
CLC5612 provides excellent -87/-93dBc second/third harmonic
distortion (Av= +2, V

out

= 2Vpp, f = 1MHz, RL= 1kΩ) and fast

settling time.

CLC5612
Dual, High Output, Programmable Gain Buffer

N

June 1999

CLC5612

Dual, High Output, Programmable Gain Buffer

© 1999 National Semiconductor Corporation http://www.national.com

Printed in the U.S.A.

Maximum Output Voltage vs. R

10

9

)

8

pp

7
6
5
4
3

Output Voltage (V

2
1

10

VCC = ±5V

Vs = +5V

100

RL (Ω)

L

1000

R

m/2

1:n

R

eq

V

d/2

1

2

V

in

3

R

t

4

1kΩ

1kΩ

1kΩ

CLC5612

8

R

-

7

+

6

1kΩ

-

+

5

m/2

-V

d/2

R

t2

Note: Supplies and bypassing not shown.

Z

UTP

o

I

o

+

R

V

L

o

-

OUT1

-IN1

+IN1

-V

CC

1kΩ

1kΩ

-

+

1kΩ

1kΩ

-

+

+V

CC

OUT2

-IN2
+IN2

http://www.national.com 2

PARAMETERS CONDITIONS TYP MIN/MAX RATINGS UNITS NOTES
Ambient Temperature CLC5612IN/IM +25°C +25°C 0 to 70°C -40 to 85°C

FREQUENCY DOMAIN RESPONSE

-3dB bandwidth V

o

= 0.5V

pp

75 50 50 50 MHz

V

o

= 2.0V

pp

62 57 54 52 MHz

-

0.1dB bandwidth Vo= 0.5V

pp

18 13 11 11 MHz

gain peaking <200MHz, V

o

= 0.5V

pp

0 0.5 0.9 1.2 dB

gain rolloff <30MHz, V

o

= 0.5V

pp

0.2 0.9 1.0 1.0 dB

linear phase deviation <30MHz, V

o

= 0.5V

pp

0.1 0.4 0.5 0.5 deg

differential gain NTSC, R

L

= 150Ω to -1V 0.09 – – – %

differential phase NTSC, R

L

= 150Ω to -1V 0.14 – – – deg

TIME DOMAIN RESPONSE

rise and fall time 2V step 5.5 9.0 9.7 10.5 ns
settling time to 0.05% 1V step 20 28 45 70 ns
overshoot 2V step 3 6.5 14 14 %
slew rate 2V step 185 150 130 120 V/µs

DISTORTION AND NOISE RESPONSE

2

nd

harmonic distortion 2Vpp, 1MHz -74 -70 -67 -67 dBc

2V

pp

, 1MHz; RL= 1kΩ -79 -77 -72 -72 dBc

2V

pp

, 5MHz -65 -58 -58 -58 dBc

3

rd

harmonic distortion 2Vpp, 1MHz -86 -82 -79 -79 dBc

2V

pp

, 1MHz; RL= 1kΩ -81 -79 -76 -76 dBc

2V

pp

, 5MHz -60 -55 -53 -53 dBc

equivalent input noise

voltage (e

ni

) >1MHz 3.4 4.4 4.9 4.9 nV/√Hz

non-inverting current (i

bn

) >1MHz 6.3 8.2 9.0 9.0 pA/√Hz

inverting current (i

bi

) >1MHz 8.7 11.3 12.4 12.4 pA/√Hz

crosstalk (input referred) 10MHz, 1V

pp

-80 – – – dB

STATIC DC PERFORMANCE

input offset voltage 8 30 35 35 mV A

average drift 80 – – – µV/˚C

input bias current (non-inverting) 3 14 18 18 µAA

average drift 25 – – – nA/˚C

gain accuracy ±0.3 ±1.5 ±2.0 ±2.0 % A

internal resistors (R

f

, Rg) 1000 ±20% ±26% ±30% Ω
power supply rejection ratio DC 48 45 43 43 dB
common-mode rejection ratio DC 47 45 43 43 dB
supply current (per amplifier) R

L

= ∞ 1.5 1.7 1.8 1.8 mA A

MISCELLANEOUS PERFORMANCE

input resistance (non-inverting) 0.41 0.29 0.26 0.26 MΩ
input capacitance (non-inverting) 2.2 3.3 3.3 3.3 pF
input voltage range, High 4.2 4.1 4.0 4.0 V
input voltage range, Low 0.8 0.9 1.0 1.0 V
output voltage range, High R

L

= 100Ω 4.0 3.9 3.8 3.8 V

output voltage range, Low R

L

= 100Ω 1.0 1.1 1.2 1.2 V

output voltage range, High R

L

= ∞ 4.1 4.0 4.0 3.9 V

output voltage range, Low R

L

= ∞ 0.9 1.0 1.0 1.1 V
output current 100 80 65 40 mA
output resistance, closed loop DC 400 600 600 600 mΩ

Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.

+5V Electrical Characteristics

(Av= +2, RL= 100Ω,Vs= +5V1,Vcm= VEE+ (Vs/2), RLtied to Vcm, unless specified)

Absolute Maximum Ratings

supply voltage (VCC- VEE)

+

14V
output current (see note C) 140mA
common-mode input voltage

VEEto

V

CC

maximum junction temperature +150°C
storage temperature range -65°C to +150°C
lead temperature (soldering 10 sec) +300°C

Notes

A) J-level:spec is 100% tested at +25°C.
B)The short circuit current can exceed the maximum safe

output current.

1) V

s

= VCC- V

EE

Reliability Information

Transistor Count 98
MTBF (based on limited test data) 285Mhr

3 http://www.national.com

PARAMETERS CONDITIONS TYP GUARANTEED MIN/MAX UNITS NOTES
Ambient Temperature CLC5612IN/IM +25°C +25°C 0 to 70°C -40 to 85°C

FREQUENCY DOMAIN RESPONSE

-3dB bandwidth V

o

= 1.0V

pp

90 75 65 65 MHz

V

o

= 4.0V

pp

49 43 40 38 MHz

-

0.1dB bandwidth Vo= 1.0V

pp

17 12 10 10 MHz

gain peaking <200MHz, V

o

= 1.0V

pp

0 0.5 0.9 1.0 dB

gain rolloff <30MHz, V

o

= 1.0V

pp

0.2 0.5 0.7 0.7 dB

linear phase deviation <30MHz, V

o

= 1.0V

pp

0.2 0.4 0.5 0.5 deg

differential gain NTSC, R

L

=150Ω 0.15 0.4 – – %

differential phase NTSC, R

L

=150Ω 0.02 0.06 – – deg

TIME DOMAIN RESPONSE

rise and fall time 2V step 6.2 6.9 7.3 7.7 ns
settling time to 0.05% 2V step 17 19 35 55 ns
overshoot 2V step 10 16 18 18 %
slew rate 2V step 290 250 220 200 V/µs

DISTORTION AND NOISE RESPONSE

2

nd

harmonic distortion 2Vpp, 1MHz -74 -70 -67 -67 dBc

2V

pp

, 1MHz; RL= 1kΩ -87 -80 -77 -77 dBc

2V

pp

, 5MHz -67 -61 -59 -59 dBc

3

rd

harmonic distortion 2Vpp, 1MHz -86 -82 -79 -79 dBc

2V

pp

, 1MHz; RL= 1kΩ -93 -88 -85 -85 dBc

2V

pp

, 5MHz -63 -59 -56 -56 dBc

equivalent input noise

voltage (e

ni

) >1MHz 3.4 4.4 4.9 4.9 nV/√Hz

non-inverting current (i

bn

) >1MHz 6.3 8.2 9.0 9.0 pA/√Hz

inverting current (i

bi

) >1MHz 8.7 11.3 12.4 12.4 pA/√Hz

crosstalk (input referred) 10MHz, 1V

pp

-80 – – – dB

STATIC DC PERFORMANCE

output offset voltage 3 30 35 35 mV

average drift 80 – – – µV/˚C

input bias current (non-inverting) 5 12 16 17 µA

average drift 40 – – – nA/˚C

gain accuracy ±0.3 ±1.5 ±2.0 ±2.0 %

internal resistors (R

f

, Rg) 1000 ±20% ±26% ±30% Ω
power supply rejection ratio DC 48 45 43 43 dB
common-mode rejection ratio DC 48 46 44 44 dB
supply current (per amplifier) R

L

= ∞ 1.6 1.9 2.0 2.0 mA

MISCELLANEOUS PERFORMANCE

input resistance (non-inverting) 0.52 0.38 0.34 0.34 MΩ
input capacitance (non-inverting) 1.9 2.85 2.85 2.85 pF
common-mode input range

±

4.2

±

4.1

±

4.1

±

4.0 V

output voltage range R

L

= 100Ω

±

3.8

±

3.6

±

3.6

±

3.5 V

output voltage range R

L

= ∞

±

4.0

±

3.8

±

3.8

±

3.7 V
output current 130 100 80 50 mA B
output resistance, closed loop DC 400 600 600 600 mΩ

±5V Electrical Characteristics

(Av= +2, RL= 100Ω,VCC= ±5V, unless specified)

Notes

B)The short circuit current can exceed the maximum safe

output current.

Ordering Information

Model Temperature Range Description

CLC5612IN -40°C to +85°C 8-pin PDIP
CLC5612IM -40°C to +85°C 8-pin SOIC
CLC5612IMX -40°C to +85°C 8-pin SOIC tape and reel

Pac kage Thermal Resistance

Package

θθ

JC

θθ

JA

Plastic (IN) 65°C/W 130°C/W
Surface Mount (IM) 50°C/W 145°C/W

http://www.national.com 4

+5V T ypical Performance

(Av= +2, RL= 100Ω,Vs= +5V1,Vcm= VEE+ (Vs/2), RLtied to Vcm, unless specified)

Non-Inverting Frequency Response

Vo = 0.5V

pp

Gain

Phase

Av = -1

Av = +2

Normalized Magnitude (1dB/div)

1M

10M

Frequency (Hz)

Frequency Response vs. Vo (Av = 2)

Vo = 0.1V

Vo = 1V

Vo = 2V

pp

Vo = 2.5V

pp

Magnitude (1dB/div)

1M

10M

100M

Frequency (Hz)

PSRR & CMRR

60

CMRR

50

PSRR

40

30

20

PSRR & CMRR (dB)

10

0

1k 10k 100M

100k 1M 10M

Frequency (Hz)

2nd & 3rd Harmonic Distortion, RL = 25Ω

-30

-40

3rd, 10MHz

Av = +1

100M

pp

pp

Phase (deg)

0

-90

-180

-270

-360

-450

Frequency Response vs. R

Vo = 0.5V

pp

Gain

Phase

RL = 25Ω

Magnitude (1dB/div)

1M

10M

L

RL = 100Ω

Frequency (Hz)

Frequency Response vs. Vo (Av = 1)

Vo = 0.1V

pp

Vo = 2V

pp

Vo = 2.5V

pp

Magnitude (1dB/div)

1M

10M

Frequency (Hz)

Equivalent Input Noise

3.6

3.5

3.4

3.3

Inverting Current 10.8pA/√Hz

Non-Inverting Current 7.6pA/√Hz

3.2

3.1

Noise Voltage (nV/√Hz)

3.0
10k 100k 1M 10M

Voltage 3.1nV/√Hz

Frequency (Hz)

2nd & 3rd Harmonic Distortion, RL = 100Ω

-40

-50

3rd, 10MHz

RL = 1kΩ

100M

Vo = 1V

100M

pp

Phase (deg)

0

-90

-180

-270

-360

-450

15

Noise Current (pA/√Hz)

11

7

3

Gain Flatness & Linear Phase

Gain

Phase

Magnitude (0.1dB/div)

0

10

20

Frequency (MHz)

Frequency Response vs. Vo (Av = -1)

Vo = 0.1V

pp

Vo = 2V

pp

Vo = 2.5V

pp

Magnitude (1dB/div)

1M

10M

Frequency (Hz)

2nd & 3rd Harmonic Distortion

-50

Vo = 2V

pp

-60

3rd

RL = 1kΩ

-70

2nd

RL = 1kΩ

-80

Distortion (dBc)

-90

3rd

-100

RL = 100Ω

1M

Frequency (Hz)

2nd & 3rd Harmonic Distortion, RL = 1kΩ

-50

-60

3rd, 10MHz

Vo = 1V

100M

2nd

RL = 100Ω

30

pp

10M

0.4

0.3

0.2

Phase (deg)

0.1
0

-0.1

-0.2

-0.3

-50

-60

Distortion (dBc)

-70

2nd, 10MHz

3rd, 1MHz

2nd, 1MHz

-80
0 0.5 1 1.5 2 2.5

Output Amplitude (Vpp)

Large & Small Signal Pulse Response

Large Signal

Small Signal

-60

-70

Distortion (dBc)

-80

-90
0 0.5 1 1.5 2 2.5

Output Amplitude (Vpp)

Closed Loop Output Resistance

100

VCC = ±5V

10

1

0.1

Output Voltage (0.02V/div)

Time (10ns/div)

Output Resistance (Ω)

0.01
10k 100k 1M 10M

Frequency (Hz)

2nd, 10MHz

2nd, 1MHz

3rd, 1MHz

100M

-70

-80

2nd, 10MHz

2nd, 1MHz

Distortion (dBc)

-90

-100
0 0.5 1 1.5 2 2.5

3rd, 1MHz

Output Amplitude (Vpp)

IBN & VIO vs. Temperature

1.5

1

(mV)

0.5 -0.2

IO

0 -0.3

-0.5 -0.4

-1 -0.5

Offset Voltage V

V

IO

I

BN

-1.5

-60 -40 -20 0 20 40 60 80 100

Temperature (°C)

0

-0.1

-0.6

I

BN

(µA)